LAMAGNA, LUCA
LAMAGNA, LUCA
DIPARTIMENTO DI SCIENZA DEI MATERIALI (attivo dal 01/01/1998 al 30/09/2012)
Atomic layer deposition and characterization of rare earth oxides for innovation in microelectronics
2009 Lamagna, L
Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interface
2011 Fusi, M; Lamagna, L; Spiga, S; Fanciulli, M; Brammertz, G; Merckling, C; Meuris, M; Molle, A
Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics
2011 Schamm Chardon, S; Coulon, P; Lamagna, L; Wiemer, C; Baldovino, S; Fanciulli, M
Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications
2012 Wiemer, C; Lamagna, L; Fanciulli, M
Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode
2012 Spiga, S; Rao, R; Lamagna, L; Wiemer, C; Congedo, G; Lamperti, A; Molle, A; Fanciulli, M; Palma, F; Irrera, F
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As
2012 Lamagna, L; Molle, A; Wiemer, C; Spiga, S; Grazianetti, C; Congedo, G; Fanciulli, M
Thermal stability of high-kappa oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories
2013 Lamperti, A; Cianci, E; Salicio, O; Lamagna, L; Spiga, S; Fanciulli, M
Concept design of the LiteBIRD satellite for CMB B-mode polarization
2018 Realini, S; Patanchon, G; Kataoka, Y; Zonca, A; Zannoni, M; Yumoto, J; Yoshida, T; Yanagisawa, M; Yamasaki, N; Yamamoto, R; Westbrook, B; Wehus, I; Watanabe, N; Vittorio, N; Utsunomiya, S; Uozumi, S; Tsujimoto, M; Tsuji, M; Tristram, M; Trappe, N; Tomida, H; Tomasi, M; Thorne, B; Thompson, K; Terao, Y; Taylor, E; Takakura, S; Takakura, H; Takaku, R; Suzuki, J; Suzuki, A; Sugiyama, S; Sugai, H; Stompor, R; Smecher, G; Signorelli, G; Shiraishi, M; Shinozaki, K; Sherwin, B; Savini, G; Sakurai, Y; Sakurai, H; Remazeilles, M; Raum, C; Puglisi, G; Poletti, D; Polenta, G; Pisano, G; Piacentini, F; Okada, N; Ohsaki, H; Ogawa, H; Ogawa, H; Ochi, H; O'Sullivan, C; Nishino, H; Nishibori, T; Natoli, P; Namikawa, T; Nakamura, S; Nagata, R; Nagai, M; Murphy, A; Murata, Y; Mot, B; Morgante, G; Montier, L; Molinari, D; Mitsuda, K; Minami, Y; Mennella, A; Matsumura, T; Masi, S; Martinez-Gonzalez, E; Maki, M; Maffei, B; Linder, E; Lee, A; Lamagna, L; Kushino, A; Kurinsky, N; Kuo, C; Krachmalnicoff, N; Konishi, K; Komatsu, K; Komatsu, E; Kohri, K; Kogiso, N; Kobayashi, Y; Kisner, T; Kimura, K; Kikuchi, T; Kibayashi, A; Keskitalo, R; Kawasaki, T; Katayama, N; Kashima, S; Kanai, H; Arnold, K; Jaehnig, G; Ishino, H; Imada, H; Ichiki, K; Hubmayr, J; Hoang, D; Hivon, E; Hirota, Y; Hill, C; Henrot-Versille, S; Hazumi, M; Hattori, M; Hasegawa, M; Hasebe, T; Hargrave, P; Halverson, N; Gruppuso, A; Grain, J; Ghigna, T; Gao, J; Ganga, K; Fuskeland, U; Franceschet, C; Flauger, R; Errand, J; Eriksen, H; Elleflot, T; Ebisawa, K; Ducout, A; Duband, L; Dotani, T; Dobbs, M; de Petris, M; de Bernardis, P; Curtis, D; Cukierman, A; Columbro, F; Chinone, Y; Challinor, A; Calabrese, E; Bucher, M; Brown, M; Boulanger, F; Borill, J; Bersanelli, M; Beckman, S; Basak, S; Banerji, R; Banday, A; Baccigalupi, C; Austermann, J; Aumont, J; Mangilli, A; Ade, P; Winter, B; Ota, I; Noviello, F; Sekimoto, Y