High dielectric constant (high-k) materials development has been pivotal in Moore's scaling of CMOS logic to address short-channel effects leading to source-drain leakage. High-k dielectrics technology is crucial to CMOS scaling down to the ultimate node. In addition, the maturing material science and technology of high permittivity materials found several other applications in emerging logic and memory devices for classical and quantum information processing within von- Neumann and non Von-Neumann schemes, as well as in other application areas such as spintronics, energy harvesting and production, sensors, and neuroelectronics. This paper focuses on a brief description of the state of the art and future prospects of high-k dielectrics for devices with logic functionalities.
Coll, M., Fontcuberta, J., Althammer, M., Bibes, M., Boschker, H., Calleja, A., et al. (2019). Towards Oxide Electronics: a Roadmap. APPLIED SURFACE SCIENCE, 482, 1-93 [10.1016/j.apsusc.2019.03.312].
Towards Oxide Electronics: a Roadmap
Fanciulli, M.;
2019
Abstract
High dielectric constant (high-k) materials development has been pivotal in Moore's scaling of CMOS logic to address short-channel effects leading to source-drain leakage. High-k dielectrics technology is crucial to CMOS scaling down to the ultimate node. In addition, the maturing material science and technology of high permittivity materials found several other applications in emerging logic and memory devices for classical and quantum information processing within von- Neumann and non Von-Neumann schemes, as well as in other application areas such as spintronics, energy harvesting and production, sensors, and neuroelectronics. This paper focuses on a brief description of the state of the art and future prospects of high-k dielectrics for devices with logic functionalities.File | Dimensione | Formato | |
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