Magnetic tunnel junctions, i.e. the combination of two ferromagnetic electrodes separated by an ultrathin tunnel oxide barrier, are core elements in a large variety of spin-based devices. We report on the use of combined chemical vapor and atomic layer deposition processes for the synthesis of magnetic tunnel junctions with no vacuum break. Structural, chemical and morphological characterizations of selected ferromagnetic and oxide layers are reported, together with the evidence of tunnel magnetoresistance effect in patterned Fe/MgO/Co junctions. (C) 2011 Elsevier B.V. All rights reserved.
Mantovan, R., Vangelista, S., Kutrzeba Kotowska, B., Cocco, S., Lamperti, A., Tallarida, G., et al. (2012). Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes. THIN SOLID FILMS, 520(14), 4820-4822 [10.1016/j.tsf.2011.08.037].
Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes
FANCIULLI, MARCO
2012
Abstract
Magnetic tunnel junctions, i.e. the combination of two ferromagnetic electrodes separated by an ultrathin tunnel oxide barrier, are core elements in a large variety of spin-based devices. We report on the use of combined chemical vapor and atomic layer deposition processes for the synthesis of magnetic tunnel junctions with no vacuum break. Structural, chemical and morphological characterizations of selected ferromagnetic and oxide layers are reported, together with the evidence of tunnel magnetoresistance effect in patterned Fe/MgO/Co junctions. (C) 2011 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.