In the present work we focus on the investigation by electron spin resonance (EPR) and complementary techniques (such as SEM, ToF-SIMS, XPS) of silicon nanowires produced by metal-assisted chemical etching (MACE). In particular we will report on the impact of the MACE process on the donors (P and As) and on surface passivation processes based on H or S. The efficiency of the passivation processes has been monitored by following the EPR signals of the Pb centers at the Si/SiO2 interface.
Fanciulli, M., Paleari, S., Belli, M., & Lamperti, A. (2016). Silicon nanowires: Donors, surfaces and interface defects. ECS TRANSACTIONS, 75(4), 179-187.
Citazione: | Fanciulli, M., Paleari, S., Belli, M., & Lamperti, A. (2016). Silicon nanowires: Donors, surfaces and interface defects. ECS TRANSACTIONS, 75(4), 179-187. |
Tipo: | Articolo in rivista - Contributo a Forum/Dibattito, Introduzione |
Carattere della pubblicazione: | Scientifica |
Presenza di un coautore afferente ad Istituzioni straniere: | No |
Titolo: | Silicon nanowires: Donors, surfaces and interface defects |
Autori: | Fanciulli, M; Paleari, S; Belli, M; Lamperti, A |
Autori: | FANCIULLI, MARCO (Primo) PALEARI, STEFANO (Secondo) |
Data di pubblicazione: | 2016 |
Lingua: | English |
Rivista: | ECS TRANSACTIONS |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1149/07504.0179ecst |
Appare nelle tipologie: | 01 - Articolo su rivista |
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