In the present work we focus on the investigation by electron spin resonance (EPR) and complementary techniques (such as SEM, ToF-SIMS, XPS) of silicon nanowires produced by metal-assisted chemical etching (MACE). In particular we will report on the impact of the MACE process on the donors (P and As) and on surface passivation processes based on H or S. The efficiency of the passivation processes has been monitored by following the EPR signals of the Pb centers at the Si/SiO2 interface.

Fanciulli, M., Paleari, S., Belli, M., Lamperti, A. (2016). Silicon nanowires: Donors, surfaces and interface defects. ECS TRANSACTIONS, 75(4), 179-187 [10.1149/07504.0179ecst].

Silicon nanowires: Donors, surfaces and interface defects

FANCIULLI, MARCO
Primo
;
PALEARI, STEFANO
Secondo
;
2016

Abstract

In the present work we focus on the investigation by electron spin resonance (EPR) and complementary techniques (such as SEM, ToF-SIMS, XPS) of silicon nanowires produced by metal-assisted chemical etching (MACE). In particular we will report on the impact of the MACE process on the donors (P and As) and on surface passivation processes based on H or S. The efficiency of the passivation processes has been monitored by following the EPR signals of the Pb centers at the Si/SiO2 interface.
Articolo in rivista - Contributo a Forum/Dibattito, Introduzione
Silicon; Nanowires; interface defects;surface passivation
English
179
187
9
Fanciulli, M., Paleari, S., Belli, M., Lamperti, A. (2016). Silicon nanowires: Donors, surfaces and interface defects. ECS TRANSACTIONS, 75(4), 179-187 [10.1149/07504.0179ecst].
Fanciulli, M; Paleari, S; Belli, M; Lamperti, A
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/132600
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