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TUKTAMYSHEV, ARTUR
 Distribuzione geografica
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Continente #
NA - Nord America 2.199
AS - Asia 1.801
EU - Europa 1.228
SA - Sud America 262
AF - Africa 36
OC - Oceania 9
Totale 5.535
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Nazione #
US - Stati Uniti d'America 2.149
SG - Singapore 581
CN - Cina 427
IT - Italia 291
DE - Germania 280
RU - Federazione Russa 274
HK - Hong Kong 262
VN - Vietnam 232
BR - Brasile 203
IE - Irlanda 87
KR - Corea 83
SE - Svezia 70
PK - Pakistan 59
GB - Regno Unito 53
ID - Indonesia 47
FI - Finlandia 36
CA - Canada 30
AR - Argentina 28
FR - Francia 26
JP - Giappone 26
PL - Polonia 22
BD - Bangladesh 20
NL - Olanda 18
IN - India 17
UA - Ucraina 13
ES - Italia 12
MX - Messico 12
BE - Belgio 11
DK - Danimarca 11
TR - Turchia 11
EC - Ecuador 10
IQ - Iraq 10
AU - Australia 7
MA - Marocco 7
VE - Venezuela 6
CI - Costa d'Avorio 5
PY - Paraguay 5
SA - Arabia Saudita 5
ZA - Sudafrica 5
AT - Austria 4
BG - Bulgaria 4
CL - Cile 4
KE - Kenya 4
TN - Tunisia 4
UZ - Uzbekistan 4
CO - Colombia 3
CZ - Repubblica Ceca 3
DZ - Algeria 3
EG - Egitto 3
NP - Nepal 3
PH - Filippine 3
AM - Armenia 2
BO - Bolivia 2
CH - Svizzera 2
DO - Repubblica Dominicana 2
GT - Guatemala 2
HU - Ungheria 2
JO - Giordania 2
MY - Malesia 2
NI - Nicaragua 2
NO - Norvegia 2
RO - Romania 2
TW - Taiwan 2
AE - Emirati Arabi Uniti 1
BY - Bielorussia 1
CG - Congo 1
ET - Etiopia 1
GR - Grecia 1
JM - Giamaica 1
KI - Kiribati 1
KZ - Kazakistan 1
LT - Lituania 1
LU - Lussemburgo 1
ML - Mali 1
MM - Myanmar 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
PA - Panama 1
PT - Portogallo 1
SN - Senegal 1
UY - Uruguay 1
Totale 5.535
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Città #
Ann Arbor 695
Singapore 368
Hong Kong 259
Ashburn 253
Frankfurt am Main 168
Hefei 150
Dallas 137
Milan 109
Santa Clara 88
Dublin 84
New York 80
Seoul 70
Ho Chi Minh City 68
Boardman 66
Beijing 64
Los Angeles 59
Wilmington 52
Sahiwal 48
Fairfield 46
Munich 45
Chandler 43
Jakarta 40
Hanoi 38
Shanghai 38
Buffalo 32
Chicago 24
Dong Ket 23
Houston 23
Moscow 21
Woodbridge 21
Cambridge 20
São Paulo 19
Helsinki 18
Warsaw 18
The Dalles 17
Kent 14
Princeton 14
Seattle 14
Brooklyn 13
London 11
Turku 11
Düsseldorf 10
Guangzhou 10
Nuremberg 10
Rome 10
San Diego 10
Montreal 9
Council Bluffs 8
Haiphong 8
Tokyo 8
Fremont 7
Guayaquil 7
Gwangjin-gu 7
Lahore 7
Ninh Bình 7
Pavia 7
Romola 7
Secaucus 7
Toronto 7
Adelaide 6
Altamura 6
Amsterdam 6
Ardea 6
Atlanta 6
Boston 6
Brussels 6
Bắc Giang 6
Charlotte 6
Ha Long 6
Heilbronn 6
Lawrence 6
Quận Bình Thạnh 6
Rio de Janeiro 6
Stockholm 6
Tampa 6
Abidjan 5
Ankara 5
Biên Hòa 5
Cagliari 5
Da Nang 5
Denver 5
Falls Church 5
Hải Dương 5
Kilburn 5
Kongens Lyngby 5
Manchester 5
Phoenix 5
Quận Phú Nhuận 5
San Francisco 5
Xi'an 5
Anzano Del Parco 4
Assago 4
Betim 4
Desio 4
Johannesburg 4
Kawasaki 4
Kraainem 4
Marburg 4
Massarosa 4
Novosibirsk 4
Totale 3.738
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Nome #
High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots 440
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 367
Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates 329
Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution 301
Nucleation of Ga droplets self-assembly on GaAs(111)A substrates 274
Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates 268
Quantum-confined modulated nanostructure for optoelectronic devices 193
Highly symmetrical DE QDs on GaAs(111)A at 780 nm and 1.3 µm 176
Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates 170
High-Purity Single-Photon Emission in the Telecom O-Band from Droplet-Epitaxy InAs Quantum Dots Integrated into a GaAs/AlGaAs Planar Microcavity on Vicinal GaAs(111)A Platform 168
Droplet Epitaxy Quantum Dots on GaAs (111)A substrates for Quantum Information Applications 163
Local droplet etching of a vicinal InGaAs(111)A metamorphic layer 154
Temperature activated transitions in the self assembly of Ga and In droplets on (111)A vicinal substrates 153
Exciton Fine Structure in InAs Quantum Dots with Cavity-Enhanced Emission at Telecommunication Wavelength and Grown on a GaAs (111) A Vicinal Substrate 152
Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control 143
Droplet nucleation on a vicinal surface: temperature-activated transitions of a density dependence 138
Conduction Band Resonant State Absorption for Quantum Dot Infrared Detectors Operating at Room Temperature 135
Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate 135
Shaping the Emission Directivity of Single Quantum Dots in Dielectric Nanodisks Exploiting Mie Resonances 128
Optically controlled dual-band quantum dot infrared photodetector 127
Precise structure characterization of droplet epitaxial telecom-wavelength QDs for Quantum Information Technology 107
Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling 105
Molecular Beam Epitaxy Growth of Atomically Flat GaAs(111)A by As2 99
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands 95
Strained multilayer structures with pseudomorphic GeSiSn layers 88
Growth of Epitaxial SiSn Films with High Sn Content for IR Converters 88
Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions 84
Initial Growth Stages of Si-Ge-Sn Ternary Alloys Grown on Si (100) by Low-Temperature Molecular-Beam Epitaxy 84
Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures 83
Cavity-enhanced low fine-structure splitting telecom-wavelength InAs QDs grown on a GaAs(111)A vicinal substrate 82
Self-Assembled Semiconductor Quantum Ring Complexes by Droplet Epitaxy: Growth and Physical Properties 81
The ordering of Ge islands on a stepped Si(100) surface 81
Sn influence on MBE growth of GeSiSn/Si MQW 80
Splitting of frequencies of optical phonons in tensile-strained germanium layers 80
Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers 77
Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100) 77
Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands 70
Valence-band offsets in strained SiGeSn/Si layers with different tin contents 67
Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures 65
Totale 5.707
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Categoria #
all - tutte 21.097
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 21.097
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021449 0 0 0 0 0 56 51 48 61 70 70 93
2021/2022448 65 70 49 38 24 27 21 26 18 22 30 58
2022/2023402 47 78 42 30 22 36 1 15 16 8 85 22
2023/2024606 13 29 40 29 52 97 63 30 48 6 15 184
2024/20251.605 95 126 107 52 99 92 71 46 118 311 143 345
2025/20261.951 515 327 362 349 370 28 0 0 0 0 0 0
Totale 5.707