TUKTAMYSHEV, ARTUR
 Distribuzione geografica
Continente #
NA - Nord America 3.129
AS - Asia 2.639
EU - Europa 1.588
SA - Sud America 341
Continente sconosciuto - Info sul continente non disponibili 178
AF - Africa 72
OC - Oceania 11
Totale 7.958
Nazione #
US - Stati Uniti d'America 3.031
SG - Singapore 816
VN - Vietnam 494
CN - Cina 492
IT - Italia 469
DE - Germania 298
HK - Hong Kong 291
RU - Federazione Russa 280
BR - Brasile 244
KR - Corea 94
IE - Irlanda 88
BD - Bangladesh 87
SE - Svezia 87
GB - Regno Unito 77
FR - Francia 72
PK - Pakistan 71
CA - Canada 60
ID - Indonesia 54
IN - India 54
FI - Finlandia 40
JP - Giappone 36
AR - Argentina 35
IQ - Iraq 34
ES - Italia 28
PL - Polonia 27
NL - Olanda 23
TR - Turchia 23
MX - Messico 21
PH - Filippine 19
EC - Ecuador 17
UA - Ucraina 17
ZA - Sudafrica 17
SA - Arabia Saudita 15
CH - Svizzera 14
BE - Belgio 13
CO - Colombia 12
DK - Danimarca 12
MA - Marocco 11
VE - Venezuela 11
AU - Australia 9
PY - Paraguay 9
UZ - Uzbekistan 8
KE - Kenya 7
TN - Tunisia 7
MY - Malesia 6
AE - Emirati Arabi Uniti 5
AT - Austria 5
CI - Costa d'Avorio 5
CL - Cile 5
DZ - Algeria 5
ET - Etiopia 5
RO - Romania 5
AL - Albania 4
BG - Bulgaria 4
CZ - Repubblica Ceca 4
EG - Egitto 4
GT - Guatemala 4
JO - Giordania 4
KG - Kirghizistan 4
NI - Nicaragua 4
NP - Nepal 4
BO - Bolivia 3
CR - Costa Rica 3
DO - Repubblica Dominicana 3
GR - Grecia 3
LT - Lituania 3
MN - Mongolia 3
TH - Thailandia 3
UY - Uruguay 3
AM - Armenia 2
AZ - Azerbaigian 2
EE - Estonia 2
HU - Ungheria 2
IL - Israele 2
JM - Giamaica 2
KZ - Kazakistan 2
NO - Norvegia 2
OM - Oman 2
PE - Perù 2
PS - Palestinian Territory 2
PT - Portogallo 2
SN - Senegal 2
SY - Repubblica araba siriana 2
TW - Taiwan 2
TZ - Tanzania 2
AO - Angola 1
BH - Bahrain 1
BY - Bielorussia 1
CG - Congo 1
CY - Cipro 1
GA - Gabon 1
HR - Croazia 1
KH - Cambogia 1
KI - Kiribati 1
LB - Libano 1
LU - Lussemburgo 1
LY - Libia 1
MD - Moldavia 1
ME - Montenegro 1
MK - Macedonia 1
Totale 7.772
Città #
Ann Arbor 695
Singapore 489
Ashburn 343
San Jose 284
Hong Kong 279
Frankfurt am Main 176
Milan 164
Hefei 150
Dallas 144
Ho Chi Minh City 143
Hanoi 121
New York 105
Santa Clara 103
Los Angeles 87
Dublin 85
Seoul 80
Boardman 71
Beijing 70
Chicago 65
Wilmington 52
Sahiwal 48
Buffalo 47
Fairfield 46
Munich 45
The Dalles 44
Chandler 43
Jakarta 42
Council Bluffs 40
Shanghai 39
Lauterbourg 36
Columbus 35
Rome 32
Houston 30
Da Nang 26
São Paulo 26
Dong Ket 23
Helsinki 22
Cambridge 21
Moscow 21
Warsaw 21
Woodbridge 21
London 18
Toronto 18
Baghdad 17
Brooklyn 15
Haiphong 15
Montreal 15
Tokyo 15
Kent 14
Princeton 14
Seattle 14
Lahore 13
Orem 13
Atlanta 12
Phoenix 12
San Diego 11
Turku 11
Zurich 11
Düsseldorf 10
Guangzhou 10
Guayaquil 10
Hải Dương 10
Ninh Bình 10
Nuremberg 10
Olive Hill 10
Amsterdam 9
Biên Hòa 9
Charlotte 9
Manchester 9
Turin 9
Johannesburg 8
Marburg 8
Newark 8
Rio de Janeiro 8
Cagliari 7
Fremont 7
Greenville 7
Gwangjin-gu 7
Pavia 7
Romola 7
San Francisco 7
Secaucus 7
Tashkent 7
Adelaide 6
Altamura 6
Ankara 6
Ardea 6
Boston 6
Brussels 6
Bắc Giang 6
Bến Tre 6
Chandigarh 6
City of London 6
Cleveland 6
Denver 6
Dhaka 6
Ha Long 6
Heilbronn 6
Jeddah 6
Lawrence 6
Totale 4.964
Nome #
High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots 507
Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates 408
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 408
Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution 359
Nucleation of Ga droplets self-assembly on GaAs(111)A substrates 337
Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates 311
Local droplet etching of a vicinal InGaAs(111)A metamorphic layer 256
Quantum-confined modulated nanostructure for optoelectronic devices 256
High-Purity Single-Photon Emission in the Telecom O-Band from Droplet-Epitaxy InAs Quantum Dots Integrated into a GaAs/AlGaAs Planar Microcavity on Vicinal GaAs(111)A Platform 254
Highly symmetrical DE QDs on GaAs(111)A at 780 nm and 1.3 µm 251
Exciton Fine Structure in InAs Quantum Dots with Cavity-Enhanced Emission at Telecommunication Wavelength and Grown on a GaAs (111) A Vicinal Substrate 238
Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates 238
Droplet Epitaxy Quantum Dots on GaAs (111)A substrates for Quantum Information Applications 236
Shaping the Emission Directivity of Single Quantum Dots in Dielectric Nanodisks Exploiting Mie Resonances 228
Temperature activated transitions in the self assembly of Ga and In droplets on (111)A vicinal substrates 225
Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control 207
Optically controlled dual-band quantum dot infrared photodetector 207
Conduction Band Resonant State Absorption for Quantum Dot Infrared Detectors Operating at Room Temperature 202
Droplet nucleation on a vicinal surface: temperature-activated transitions of a density dependence 197
Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate 190
Cavity-enhanced low fine-structure splitting telecom-wavelength InAs QDs grown on a GaAs(111)A vicinal substrate 172
Precise structure characterization of droplet epitaxial telecom-wavelength QDs for Quantum Information Technology 172
Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling 162
Self-Assembled Semiconductor Quantum Ring Complexes by Droplet Epitaxy: Growth and Physical Properties 158
Molecular Beam Epitaxy Growth of Atomically Flat GaAs(111)A by As2 155
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands 132
Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100) 123
Growth of Epitaxial SiSn Films with High Sn Content for IR Converters 119
Strained multilayer structures with pseudomorphic GeSiSn layers 118
Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions 117
Sn influence on MBE growth of GeSiSn/Si MQW 117
Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures 114
Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers 114
Splitting of frequencies of optical phonons in tensile-strained germanium layers 114
Initial Growth Stages of Si-Ge-Sn Ternary Alloys Grown on Si (100) by Low-Temperature Molecular-Beam Epitaxy 113
The ordering of Ge islands on a stepped Si(100) surface 107
Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands 106
Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures 106
Valence-band offsets in strained SiGeSn/Si layers with different tin contents 97
Self-assembled GaAs nanostructures on 4H-SiC(0001) with ultra-thin oxide layer 15
High-purity single and entangled photon emission from droplet-epitaxy quantum dots on GaAs(111)A platform 12
Totale 7.958
Categoria #
all - tutte 27.140
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 27.140


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022383 0 70 49 38 24 27 21 26 18 22 30 58
2022/2023402 47 78 42 30 22 36 1 15 16 8 85 22
2023/2024606 13 29 40 29 52 97 63 30 48 6 15 184
2024/20251.605 95 126 107 52 99 92 71 46 118 311 143 345
2025/20263.993 515 327 362 349 370 188 633 157 294 347 174 277
2026/2027209 119 90 0 0 0 0 0 0 0 0 0 0
Totale 7.958