TUKTAMYSHEV, ARTUR
 Distribuzione geografica
Continente #
NA - Nord America 1.136
EU - Europa 556
AS - Asia 141
AF - Africa 6
SA - Sud America 2
Totale 1.841
Nazione #
US - Stati Uniti d'America 1.130
DE - Germania 177
IT - Italia 169
IE - Irlanda 86
HK - Hong Kong 58
CN - Cina 46
SE - Svezia 45
VN - Vietnam 27
FI - Finlandia 17
GB - Regno Unito 15
BE - Belgio 11
CA - Canada 6
RU - Federazione Russa 6
CI - Costa d'Avorio 5
DK - Danimarca 5
ES - Italia 5
IN - India 4
BG - Bulgaria 3
FR - Francia 3
NL - Olanda 3
PK - Pakistan 3
UA - Ucraina 3
BR - Brasile 2
CH - Svizzera 2
JP - Giappone 2
NO - Norvegia 2
CZ - Repubblica Ceca 1
DZ - Algeria 1
HU - Ungheria 1
KR - Corea 1
PL - Polonia 1
RO - Romania 1
Totale 1.841
Città #
Ann Arbor 695
Frankfurt am Main 159
Dublin 83
New York 65
Hong Kong 58
Wilmington 52
Milan 50
Fairfield 46
Chandler 43
Shanghai 26
Ashburn 23
Dong Ket 23
Woodbridge 21
Cambridge 20
Houston 16
Helsinki 15
Princeton 14
Seattle 11
San Diego 8
Fremont 7
Pavia 7
Altamura 6
Ardea 6
Brussels 6
Lawrence 6
Los Angeles 6
Abidjan 5
Beijing 5
Cagliari 5
Falls Church 5
Kilburn 5
Rome 5
Anzano Del Parco 4
Assago 4
Guangzhou 4
Kraainem 4
Massarosa 4
Munich 4
Novosibirsk 4
Sacramento 4
A Coruña 3
Norwalk 3
Pune 3
Savona 3
Sofia 3
Toronto 3
Castelraimondo 2
Como 2
Dearborn 2
Freiburg im Breisgau 2
Grafing 2
Hounslow 2
Jacksonville 2
Jinan 2
Lappeenranta 2
London 2
Madrid 2
Monza 2
Naples 2
Novara 2
Nuremberg 2
Oslo 2
Ottawa 2
San Mateo 2
Trieste 2
Turin 2
Aalst 1
Amsterdam 1
Andover 1
Bareggio 1
Boardman 1
Brescia 1
Brno 1
Budapest 1
Böblingen 1
Castel Campagnano 1
Dubendorf 1
Elk Grove Village 1
Goleta 1
Hebei 1
Islamabad 1
Kongens Lyngby 1
Lafayette 1
Legnano 1
Leonberg 1
Miami Beach 1
Mill Hill 1
Montréal 1
Nanchang 1
Nanjing 1
Osasco 1
Parabiago 1
Paris 1
Redmond 1
Salerno 1
Secaucus 1
Sialkot 1
Suzhou 1
São Paulo 1
Taganrog 1
Totale 1.626
Nome #
High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots 341
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 284
Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates 255
Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution 224
Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates 191
Nucleation of Ga droplets self-assembly on GaAs(111)A substrates 188
Droplet Epitaxy Quantum Dots on GaAs (111)A substrates for Quantum Information Applications 57
Temperature activated transitions in the self assembly of Ga and In droplets on (111)A vicinal substrates 40
Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate 33
Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates 33
Exciton Fine Structure in InAs Quantum Dots with Cavity-Enhanced Emission at Telecommunication Wavelength and Grown on a GaAs (111) A Vicinal Substrate 29
Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control 27
Optically controlled dual-band quantum dot infrared photodetector 27
Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions 20
Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures 19
Strained multilayer structures with pseudomorphic GeSiSn layers 19
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands 17
Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers 17
Sn influence on MBE growth of GeSiSn/Si MQW 17
Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands 16
Splitting of frequencies of optical phonons in tensile-strained germanium layers 15
Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100) 15
Initial Growth Stages of Si-Ge-Sn Ternary Alloys Grown on Si (100) by Low-Temperature Molecular-Beam Epitaxy 15
The ordering of Ge islands on a stepped Si(100) surface 14
Growth of Epitaxial SiSn Films with High Sn Content for IR Converters 14
Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures 14
Valence-band offsets in strained SiGeSn/Si layers with different tin contents 11
Totale 1.952
Categoria #
all - tutte 6.911
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.911


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020101 0 0 0 0 0 0 34 17 20 16 10 4
2020/2021594 15 12 43 37 38 56 51 48 61 70 70 93
2021/2022448 65 70 49 38 24 27 21 26 18 22 30 58
2022/2023402 47 78 42 30 22 36 1 15 16 8 85 22
2023/2024407 13 29 40 29 52 97 63 30 48 6 0 0
Totale 1.952