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TUKTAMYSHEV, ARTUR
 Distribuzione geografica
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Continente #
NA - Nord America 2.976
AS - Asia 2.629
EU - Europa 1.553
SA - Sud America 338
AF - Africa 70
OC - Oceania 11
Totale 7.577
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Nazione #
US - Stati Uniti d'America 2.886
SG - Singapore 814
VN - Vietnam 493
CN - Cina 490
IT - Italia 454
DE - Germania 297
HK - Hong Kong 291
RU - Federazione Russa 279
BR - Brasile 244
KR - Corea 94
IE - Irlanda 88
BD - Bangladesh 83
GB - Regno Unito 76
FR - Francia 72
PK - Pakistan 71
SE - Svezia 70
CA - Canada 56
IN - India 54
ID - Indonesia 53
FI - Finlandia 40
JP - Giappone 36
AR - Argentina 35
IQ - Iraq 34
ES - Italia 28
PL - Polonia 27
NL - Olanda 23
TR - Turchia 23
MX - Messico 21
PH - Filippine 19
EC - Ecuador 17
UA - Ucraina 17
ZA - Sudafrica 17
SA - Arabia Saudita 15
CH - Svizzera 14
BE - Belgio 13
DK - Danimarca 12
VE - Venezuela 11
MA - Marocco 10
AU - Australia 9
CO - Colombia 9
PY - Paraguay 9
UZ - Uzbekistan 8
KE - Kenya 7
TN - Tunisia 7
MY - Malesia 6
AE - Emirati Arabi Uniti 5
AT - Austria 5
CI - Costa d'Avorio 5
CL - Cile 5
ET - Etiopia 5
RO - Romania 5
AL - Albania 4
BG - Bulgaria 4
CZ - Repubblica Ceca 4
DZ - Algeria 4
EG - Egitto 4
JO - Giordania 4
KG - Kirghizistan 4
NP - Nepal 4
BO - Bolivia 3
DO - Repubblica Dominicana 3
GR - Grecia 3
GT - Guatemala 3
LT - Lituania 3
MN - Mongolia 3
NI - Nicaragua 3
TH - Thailandia 3
UY - Uruguay 3
AM - Armenia 2
AZ - Azerbaigian 2
EE - Estonia 2
HU - Ungheria 2
IL - Israele 2
JM - Giamaica 2
KZ - Kazakistan 2
NO - Norvegia 2
OM - Oman 2
PE - Perù 2
PS - Palestinian Territory 2
PT - Portogallo 2
SN - Senegal 2
SY - Repubblica araba siriana 2
TW - Taiwan 2
TZ - Tanzania 2
AO - Angola 1
BH - Bahrain 1
BY - Bielorussia 1
CG - Congo 1
CR - Costa Rica 1
CY - Cipro 1
GA - Gabon 1
HR - Croazia 1
KH - Cambogia 1
KI - Kiribati 1
LB - Libano 1
LU - Lussemburgo 1
LY - Libia 1
MD - Moldavia 1
ME - Montenegro 1
MK - Macedonia 1
Totale 7.569
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Città #
Ann Arbor 695
Singapore 489
Ashburn 318
San Jose 284
Hong Kong 279
Frankfurt am Main 176
Milan 162
Hefei 150
Dallas 144
Ho Chi Minh City 142
Hanoi 121
New York 103
Santa Clara 96
Dublin 85
Los Angeles 83
Seoul 80
Boardman 71
Beijing 68
Chicago 64
Wilmington 52
Sahiwal 48
Buffalo 46
Fairfield 46
Munich 45
The Dalles 44
Chandler 43
Jakarta 42
Shanghai 39
Council Bluffs 38
Lauterbourg 36
Rome 29
Houston 27
Da Nang 26
São Paulo 26
Dong Ket 23
Helsinki 22
Cambridge 21
Moscow 21
Warsaw 21
Woodbridge 21
London 18
Baghdad 17
Toronto 16
Brooklyn 15
Haiphong 15
Montreal 15
Tokyo 15
Kent 14
Princeton 14
Seattle 14
Lahore 13
Orem 13
Atlanta 12
San Diego 11
Turku 11
Zurich 11
Düsseldorf 10
Guangzhou 10
Guayaquil 10
Hải Dương 10
Ninh Bình 10
Nuremberg 10
Olive Hill 10
Amsterdam 9
Biên Hòa 9
Charlotte 9
Columbus 9
Manchester 9
Phoenix 9
Johannesburg 8
Marburg 8
Newark 8
Rio de Janeiro 8
Turin 8
Cagliari 7
Fremont 7
Greenville 7
Gwangjin-gu 7
Pavia 7
Romola 7
Secaucus 7
Tashkent 7
Adelaide 6
Altamura 6
Ankara 6
Ardea 6
Boston 6
Brussels 6
Bắc Giang 6
Bến Tre 6
Chandigarh 6
City of London 6
Cleveland 6
Denver 6
Dhaka 6
Ha Long 6
Heilbronn 6
Jeddah 6
Lawrence 6
Quận Bình Thạnh 6
Totale 4.878
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Nome #
High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots 506
Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates 404
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 404
Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution 355
Nucleation of Ga droplets self-assembly on GaAs(111)A substrates 332
Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates 309
Quantum-confined modulated nanostructure for optoelectronic devices 254
Local droplet etching of a vicinal InGaAs(111)A metamorphic layer 252
High-Purity Single-Photon Emission in the Telecom O-Band from Droplet-Epitaxy InAs Quantum Dots Integrated into a GaAs/AlGaAs Planar Microcavity on Vicinal GaAs(111)A Platform 244
Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates 236
Highly symmetrical DE QDs on GaAs(111)A at 780 nm and 1.3 µm 236
Exciton Fine Structure in InAs Quantum Dots with Cavity-Enhanced Emission at Telecommunication Wavelength and Grown on a GaAs (111) A Vicinal Substrate 233
Droplet Epitaxy Quantum Dots on GaAs (111)A substrates for Quantum Information Applications 225
Temperature activated transitions in the self assembly of Ga and In droplets on (111)A vicinal substrates 222
Shaping the Emission Directivity of Single Quantum Dots in Dielectric Nanodisks Exploiting Mie Resonances 214
Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control 202
Optically controlled dual-band quantum dot infrared photodetector 201
Conduction Band Resonant State Absorption for Quantum Dot Infrared Detectors Operating at Room Temperature 197
Droplet nucleation on a vicinal surface: temperature-activated transitions of a density dependence 193
Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate 182
Precise structure characterization of droplet epitaxial telecom-wavelength QDs for Quantum Information Technology 168
Cavity-enhanced low fine-structure splitting telecom-wavelength InAs QDs grown on a GaAs(111)A vicinal substrate 162
Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling 156
Molecular Beam Epitaxy Growth of Atomically Flat GaAs(111)A by As2 150
Self-Assembled Semiconductor Quantum Ring Complexes by Droplet Epitaxy: Growth and Physical Properties 144
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands 130
Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100) 122
Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions 117
Sn influence on MBE growth of GeSiSn/Si MQW 116
Strained multilayer structures with pseudomorphic GeSiSn layers 115
Growth of Epitaxial SiSn Films with High Sn Content for IR Converters 115
Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures 114
Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers 114
Splitting of frequencies of optical phonons in tensile-strained germanium layers 113
Initial Growth Stages of Si-Ge-Sn Ternary Alloys Grown on Si (100) by Low-Temperature Molecular-Beam Epitaxy 111
The ordering of Ge islands on a stepped Si(100) surface 106
Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands 101
Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures 101
Valence-band offsets in strained SiGeSn/Si layers with different tin contents 93
Totale 7.749
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Categoria #
all - tutte 25.967
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 25.967
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202193 0 0 0 0 0 0 0 0 0 0 0 93
2021/2022448 65 70 49 38 24 27 21 26 18 22 30 58
2022/2023402 47 78 42 30 22 36 1 15 16 8 85 22
2023/2024606 13 29 40 29 52 97 63 30 48 6 15 184
2024/20251.605 95 126 107 52 99 92 71 46 118 311 143 345
2025/20263.993 515 327 362 349 370 188 633 157 294 347 174 277
Totale 7.749