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TUKTAMYSHEV, ARTUR
 Distribuzione geografica
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Continente #
NA - Nord America 3.745
AS - Asia 2.655
EU - Europa 1.619
SA - Sud America 358
Continente sconosciuto - Info sul continente non disponibili 180
AF - Africa 72
OC - Oceania 11
Totale 8.640
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Nazione #
US - Stati Uniti d'America 3.631
SG - Singapore 818
VN - Vietnam 495
CN - Cina 493
IT - Italia 484
DE - Germania 298
HK - Hong Kong 292
RU - Federazione Russa 280
BR - Brasile 253
KR - Corea 95
BD - Bangladesh 91
IE - Irlanda 88
SE - Svezia 87
GB - Regno Unito 83
FR - Francia 76
CA - Canada 71
PK - Pakistan 71
ID - Indonesia 56
IN - India 54
FI - Finlandia 40
AR - Argentina 36
JP - Giappone 36
IQ - Iraq 34
ES - Italia 28
PL - Polonia 27
NL - Olanda 24
TR - Turchia 24
MX - Messico 23
EC - Ecuador 19
PH - Filippine 19
SA - Arabia Saudita 17
UA - Ucraina 17
ZA - Sudafrica 17
CO - Colombia 16
CH - Svizzera 14
BE - Belgio 13
DK - Danimarca 13
VE - Venezuela 12
MA - Marocco 11
AU - Australia 9
PY - Paraguay 9
UZ - Uzbekistan 8
KE - Kenya 7
TN - Tunisia 7
MY - Malesia 6
AE - Emirati Arabi Uniti 5
AT - Austria 5
CI - Costa d'Avorio 5
CL - Cile 5
CR - Costa Rica 5
DZ - Algeria 5
ET - Etiopia 5
LT - Lituania 5
RO - Romania 5
AL - Albania 4
BG - Bulgaria 4
CZ - Repubblica Ceca 4
EG - Egitto 4
GT - Guatemala 4
JO - Giordania 4
KG - Kirghizistan 4
NI - Nicaragua 4
NP - Nepal 4
BO - Bolivia 3
DO - Repubblica Dominicana 3
EE - Estonia 3
GR - Grecia 3
MN - Mongolia 3
TH - Thailandia 3
TW - Taiwan 3
UY - Uruguay 3
AM - Armenia 2
AZ - Azerbaigian 2
HU - Ungheria 2
IL - Israele 2
JM - Giamaica 2
KZ - Kazakistan 2
NO - Norvegia 2
OM - Oman 2
PE - Perù 2
PS - Palestinian Territory 2
PT - Portogallo 2
SN - Senegal 2
SY - Repubblica araba siriana 2
TZ - Tanzania 2
AO - Angola 1
BB - Barbados 1
BH - Bahrain 1
BY - Bielorussia 1
CG - Congo 1
CY - Cipro 1
GA - Gabon 1
HR - Croazia 1
KH - Cambogia 1
KI - Kiribati 1
LB - Libano 1
LU - Lussemburgo 1
LY - Libia 1
MD - Moldavia 1
ME - Montenegro 1
Totale 8.450
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Città #
Ann Arbor 695
Singapore 490
Ashburn 430
San Jose 361
Hong Kong 280
Frankfurt am Main 176
Milan 171
Hefei 150
Dallas 147
Ho Chi Minh City 143
Hanoi 121
New York 112
Santa Clara 111
Council Bluffs 102
Los Angeles 92
Dublin 85
Seoul 81
Beijing 71
Boardman 71
Chicago 67
Wilmington 53
Buffalo 49
Sahiwal 48
Fairfield 46
Munich 45
The Dalles 44
Chandler 43
Jakarta 43
Shanghai 39
Columbus 38
Lauterbourg 36
Rome 33
Houston 31
São Paulo 28
Da Nang 26
Phoenix 24
Dong Ket 23
Helsinki 22
Toronto 22
Cambridge 21
Moscow 21
Warsaw 21
Woodbridge 21
Brooklyn 19
London 19
Atlanta 17
Baghdad 17
Montreal 16
Seattle 16
Haiphong 15
Tokyo 15
Kent 14
Princeton 14
Lahore 13
Orem 13
Newark 12
Guayaquil 11
San Diego 11
Turku 11
Zurich 11
Düsseldorf 10
Guangzhou 10
Hải Dương 10
Ninh Bình 10
Nuremberg 10
Olive Hill 10
Amsterdam 9
Biên Hòa 9
Boston 9
Charlotte 9
Manchester 9
Turin 9
Brasília 8
Denver 8
Jeddah 8
Johannesburg 8
Marburg 8
Rio de Janeiro 8
Washington 8
Cagliari 7
Cleveland 7
Fremont 7
Greenville 7
Gwangjin-gu 7
Pavia 7
Philadelphia 7
Romola 7
San Francisco 7
Secaucus 7
Tampa 7
Tashkent 7
Adelaide 6
Altamura 6
Ankara 6
Ardea 6
Biloxi 6
Brussels 6
Bắc Giang 6
Bến Tre 6
Chandigarh 6
Totale 5.285
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Nome #
High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots 517
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 424
Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates 422
Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution 375
Nucleation of Ga droplets self-assembly on GaAs(111)A substrates 352
Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates 325
Local droplet etching of a vicinal InGaAs(111)A metamorphic layer 283
High-Purity Single-Photon Emission in the Telecom O-Band from Droplet-Epitaxy InAs Quantum Dots Integrated into a GaAs/AlGaAs Planar Microcavity on Vicinal GaAs(111)A Platform 279
Quantum-confined modulated nanostructure for optoelectronic devices 277
Highly symmetrical DE QDs on GaAs(111)A at 780 nm and 1.3 µm 265
Droplet Epitaxy Quantum Dots on GaAs (111)A substrates for Quantum Information Applications 262
Exciton Fine Structure in InAs Quantum Dots with Cavity-Enhanced Emission at Telecommunication Wavelength and Grown on a GaAs (111) A Vicinal Substrate 260
Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates 256
Shaping the Emission Directivity of Single Quantum Dots in Dielectric Nanodisks Exploiting Mie Resonances 254
Temperature activated transitions in the self assembly of Ga and In droplets on (111)A vicinal substrates 238
Optically controlled dual-band quantum dot infrared photodetector 229
Conduction Band Resonant State Absorption for Quantum Dot Infrared Detectors Operating at Room Temperature 226
Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control 219
Droplet nucleation on a vicinal surface: temperature-activated transitions of a density dependence 211
Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate 203
Cavity-enhanced low fine-structure splitting telecom-wavelength InAs QDs grown on a GaAs(111)A vicinal substrate 187
Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling 186
Precise structure characterization of droplet epitaxial telecom-wavelength QDs for Quantum Information Technology 184
Self-Assembled Semiconductor Quantum Ring Complexes by Droplet Epitaxy: Growth and Physical Properties 175
Molecular Beam Epitaxy Growth of Atomically Flat GaAs(111)A by As2 166
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands 154
Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions 135
Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers 133
Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100) 132
Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures 130
Strained multilayer structures with pseudomorphic GeSiSn layers 129
Splitting of frequencies of optical phonons in tensile-strained germanium layers 128
Growth of Epitaxial SiSn Films with High Sn Content for IR Converters 128
Sn influence on MBE growth of GeSiSn/Si MQW 124
Initial Growth Stages of Si-Ge-Sn Ternary Alloys Grown on Si (100) by Low-Temperature Molecular-Beam Epitaxy 123
The ordering of Ge islands on a stepped Si(100) surface 121
Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands 119
Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures 119
Valence-band offsets in strained SiGeSn/Si layers with different tin contents 107
High-purity single and entangled photon emission from droplet-epitaxy quantum dots on GaAs(111)A platform 43
Self-assembled GaAs nanostructures on 4H-SiC(0001) with ultra-thin oxide layer 40
Totale 8.640
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Categoria #
all - tutte 29.106
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 29.106
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022264 0 0 0 38 24 27 21 26 18 22 30 58
2022/2023402 47 78 42 30 22 36 1 15 16 8 85 22
2023/2024606 13 29 40 29 52 97 63 30 48 6 15 184
2024/20251.605 95 126 107 52 99 92 71 46 118 311 143 345
2025/20263.993 515 327 362 349 370 188 633 157 294 347 174 277
2026/2027891 119 216 341 215 0 0 0 0 0 0 0 0
Totale 8.640