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TUKTAMYSHEV, ARTUR
 Distribuzione geografica
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Continente #
NA - Nord America 2.800
AS - Asia 2.560
EU - Europa 1.406
SA - Sud America 337
AF - Africa 70
OC - Oceania 10
Totale 7.183
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Nazione #
US - Stati Uniti d'America 2.728
SG - Singapore 812
CN - Cina 485
VN - Vietnam 470
IT - Italia 309
DE - Germania 297
HK - Hong Kong 289
RU - Federazione Russa 279
BR - Brasile 244
KR - Corea 94
IE - Irlanda 88
GB - Regno Unito 75
FR - Francia 72
PK - Pakistan 71
SE - Svezia 70
IN - India 54
ID - Indonesia 53
BD - Bangladesh 47
CA - Canada 41
FI - Finlandia 40
AR - Argentina 35
JP - Giappone 35
IQ - Iraq 34
ES - Italia 28
PL - Polonia 27
NL - Olanda 23
TR - Turchia 23
MX - Messico 21
PH - Filippine 19
EC - Ecuador 17
UA - Ucraina 17
ZA - Sudafrica 17
SA - Arabia Saudita 15
CH - Svizzera 14
BE - Belgio 13
DK - Danimarca 12
MA - Marocco 10
VE - Venezuela 10
CO - Colombia 9
PY - Paraguay 9
AU - Australia 8
UZ - Uzbekistan 8
KE - Kenya 7
TN - Tunisia 7
MY - Malesia 6
AE - Emirati Arabi Uniti 5
AT - Austria 5
CI - Costa d'Avorio 5
CL - Cile 5
ET - Etiopia 5
RO - Romania 5
AL - Albania 4
BG - Bulgaria 4
CZ - Repubblica Ceca 4
DZ - Algeria 4
EG - Egitto 4
JO - Giordania 4
KG - Kirghizistan 4
NP - Nepal 4
BO - Bolivia 3
DO - Repubblica Dominicana 3
GR - Grecia 3
LT - Lituania 3
MN - Mongolia 3
TH - Thailandia 3
UY - Uruguay 3
AM - Armenia 2
AZ - Azerbaigian 2
EE - Estonia 2
GT - Guatemala 2
HU - Ungheria 2
IL - Israele 2
KZ - Kazakistan 2
NI - Nicaragua 2
NO - Norvegia 2
OM - Oman 2
PE - Perù 2
PS - Palestinian Territory 2
PT - Portogallo 2
SN - Senegal 2
SY - Repubblica araba siriana 2
TW - Taiwan 2
TZ - Tanzania 2
AO - Angola 1
BH - Bahrain 1
BY - Bielorussia 1
CG - Congo 1
CR - Costa Rica 1
CY - Cipro 1
GA - Gabon 1
JM - Giamaica 1
KH - Cambogia 1
KI - Kiribati 1
LB - Libano 1
LU - Lussemburgo 1
LY - Libia 1
MD - Moldavia 1
ME - Montenegro 1
MK - Macedonia 1
ML - Mali 1
Totale 7.176
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Città #
Ann Arbor 695
Singapore 489
Ashburn 300
Hong Kong 279
San Jose 278
Frankfurt am Main 176
Hefei 150
Dallas 142
Ho Chi Minh City 140
Milan 114
Hanoi 106
New York 95
Santa Clara 93
Dublin 85
Seoul 80
Los Angeles 79
Beijing 68
Boardman 66
Chicago 63
Wilmington 52
Sahiwal 48
Fairfield 46
Munich 45
Buffalo 44
The Dalles 44
Chandler 43
Jakarta 42
Shanghai 39
Lauterbourg 36
Council Bluffs 32
São Paulo 26
Da Nang 24
Dong Ket 23
Houston 23
Helsinki 22
Cambridge 21
Moscow 21
Warsaw 21
Woodbridge 21
Baghdad 17
London 17
Brooklyn 15
Haiphong 15
Tokyo 15
Kent 14
Princeton 14
Seattle 14
Lahore 13
Orem 13
Rome 13
Atlanta 12
Montreal 11
San Diego 11
Turku 11
Zurich 11
Düsseldorf 10
Guangzhou 10
Guayaquil 10
Hải Dương 10
Ninh Bình 10
Nuremberg 10
Toronto 10
Amsterdam 9
Biên Hòa 9
Manchester 9
Charlotte 8
Johannesburg 8
Marburg 8
Phoenix 8
Rio de Janeiro 8
Fremont 7
Gwangjin-gu 7
Pavia 7
Romola 7
Secaucus 7
Tashkent 7
Adelaide 6
Altamura 6
Ankara 6
Ardea 6
Boston 6
Brussels 6
Bắc Giang 6
Bến Tre 6
Chandigarh 6
City of London 6
Denver 6
Dhaka 6
Ha Long 6
Heilbronn 6
Jeddah 6
Lawrence 6
Quận Bình Thạnh 6
Stockholm 6
Taganrog 6
Tampa 6
Abidjan 5
Cagliari 5
Falls Church 5
Kilburn 5
Totale 4.706
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Nome #
High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots 497
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 397
Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates 393
Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution 348
Nucleation of Ga droplets self-assembly on GaAs(111)A substrates 317
Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates 303
Quantum-confined modulated nanostructure for optoelectronic devices 243
Local droplet etching of a vicinal InGaAs(111)A metamorphic layer 232
Highly symmetrical DE QDs on GaAs(111)A at 780 nm and 1.3 µm 230
Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates 227
Exciton Fine Structure in InAs Quantum Dots with Cavity-Enhanced Emission at Telecommunication Wavelength and Grown on a GaAs (111) A Vicinal Substrate 214
High-Purity Single-Photon Emission in the Telecom O-Band from Droplet-Epitaxy InAs Quantum Dots Integrated into a GaAs/AlGaAs Planar Microcavity on Vicinal GaAs(111)A Platform 214
Droplet Epitaxy Quantum Dots on GaAs (111)A substrates for Quantum Information Applications 212
Temperature activated transitions in the self assembly of Ga and In droplets on (111)A vicinal substrates 201
Optically controlled dual-band quantum dot infrared photodetector 196
Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control 192
Conduction Band Resonant State Absorption for Quantum Dot Infrared Detectors Operating at Room Temperature 183
Droplet nucleation on a vicinal surface: temperature-activated transitions of a density dependence 183
Shaping the Emission Directivity of Single Quantum Dots in Dielectric Nanodisks Exploiting Mie Resonances 179
Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate 179
Precise structure characterization of droplet epitaxial telecom-wavelength QDs for Quantum Information Technology 165
Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling 151
Cavity-enhanced low fine-structure splitting telecom-wavelength InAs QDs grown on a GaAs(111)A vicinal substrate 147
Molecular Beam Epitaxy Growth of Atomically Flat GaAs(111)A by As2 144
Self-Assembled Semiconductor Quantum Ring Complexes by Droplet Epitaxy: Growth and Physical Properties 136
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands 120
Sn influence on MBE growth of GeSiSn/Si MQW 115
Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions 111
Splitting of frequencies of optical phonons in tensile-strained germanium layers 111
Strained multilayer structures with pseudomorphic GeSiSn layers 111
Growth of Epitaxial SiSn Films with High Sn Content for IR Converters 109
Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers 108
Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures 107
The ordering of Ge islands on a stepped Si(100) surface 105
Initial Growth Stages of Si-Ge-Sn Ternary Alloys Grown on Si (100) by Low-Temperature Molecular-Beam Epitaxy 103
Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands 97
Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100) 96
Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures 92
Valence-band offsets in strained SiGeSn/Si layers with different tin contents 87
Totale 7.355
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Categoria #
all - tutte 24.411
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 24.411
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021163 0 0 0 0 0 0 0 0 0 0 70 93
2021/2022448 65 70 49 38 24 27 21 26 18 22 30 58
2022/2023402 47 78 42 30 22 36 1 15 16 8 85 22
2023/2024606 13 29 40 29 52 97 63 30 48 6 15 184
2024/20251.605 95 126 107 52 99 92 71 46 118 311 143 345
2025/20263.599 515 327 362 349 370 188 633 157 294 347 57 0
Totale 7.355