TUKTAMYSHEV, ARTUR
 Distribuzione geografica
Continente #
NA - Nord America 3.958
AS - Asia 2.660
EU - Europa 1.639
SA - Sud America 360
Continente sconosciuto - Info sul continente non disponibili 180
AF - Africa 73
OC - Oceania 11
Totale 8.881
Nazione #
US - Stati Uniti d'America 3.835
SG - Singapore 820
IT - Italia 496
VN - Vietnam 495
CN - Cina 493
DE - Germania 298
HK - Hong Kong 292
RU - Federazione Russa 281
BR - Brasile 253
KR - Corea 95
BD - Bangladesh 92
IE - Irlanda 89
SE - Svezia 87
GB - Regno Unito 85
CA - Canada 78
FR - Francia 78
PK - Pakistan 71
ID - Indonesia 57
IN - India 54
FI - Finlandia 40
AR - Argentina 36
JP - Giappone 36
IQ - Iraq 34
ES - Italia 28
PL - Polonia 27
NL - Olanda 24
TR - Turchia 24
MX - Messico 23
EC - Ecuador 21
PH - Filippine 19
SA - Arabia Saudita 17
UA - Ucraina 17
ZA - Sudafrica 17
CO - Colombia 16
CH - Svizzera 14
BE - Belgio 13
DK - Danimarca 13
VE - Venezuela 12
MA - Marocco 11
AU - Australia 9
PY - Paraguay 9
KE - Kenya 8
UZ - Uzbekistan 8
TN - Tunisia 7
MY - Malesia 6
AE - Emirati Arabi Uniti 5
AT - Austria 5
CI - Costa d'Avorio 5
CL - Cile 5
CR - Costa Rica 5
DZ - Algeria 5
EE - Estonia 5
ET - Etiopia 5
KG - Kirghizistan 5
LT - Lituania 5
RO - Romania 5
AL - Albania 4
BG - Bulgaria 4
CZ - Repubblica Ceca 4
EG - Egitto 4
GT - Guatemala 4
JO - Giordania 4
NI - Nicaragua 4
NP - Nepal 4
BO - Bolivia 3
DO - Repubblica Dominicana 3
GR - Grecia 3
MN - Mongolia 3
TH - Thailandia 3
TW - Taiwan 3
UY - Uruguay 3
AM - Armenia 2
AZ - Azerbaigian 2
HU - Ungheria 2
IL - Israele 2
JM - Giamaica 2
KZ - Kazakistan 2
NO - Norvegia 2
OM - Oman 2
PE - Perù 2
PS - Palestinian Territory 2
PT - Portogallo 2
SN - Senegal 2
SY - Repubblica araba siriana 2
TZ - Tanzania 2
AO - Angola 1
BB - Barbados 1
BH - Bahrain 1
BY - Bielorussia 1
CG - Congo 1
CY - Cipro 1
GA - Gabon 1
HN - Honduras 1
HR - Croazia 1
KH - Cambogia 1
KI - Kiribati 1
LB - Libano 1
LU - Lussemburgo 1
LY - Libia 1
MD - Moldavia 1
Totale 8.689
Città #
Ann Arbor 695
Singapore 492
Ashburn 469
San Jose 361
Hong Kong 280
Frankfurt am Main 176
Milan 171
Council Bluffs 156
Hefei 150
Dallas 148
Ho Chi Minh City 143
Hanoi 121
Santa Clara 115
New York 113
Los Angeles 93
Dublin 85
Seoul 81
Beijing 71
Boardman 71
Chicago 67
Wilmington 53
Buffalo 51
Sahiwal 48
Fairfield 46
Munich 45
The Dalles 44
Chandler 43
Jakarta 43
Shanghai 39
Columbus 38
Lauterbourg 36
Rome 36
Houston 31
São Paulo 28
Da Nang 26
Phoenix 25
Toronto 24
Dong Ket 23
Helsinki 22
Cambridge 21
Moscow 21
Warsaw 21
Woodbridge 21
Brooklyn 20
London 19
Atlanta 18
Montreal 18
Baghdad 17
Seattle 16
Haiphong 15
Tokyo 15
Kent 14
Princeton 14
Lahore 13
Newark 13
Orem 13
Guayaquil 12
San Diego 11
Turku 11
Zurich 11
Düsseldorf 10
Guangzhou 10
Hải Dương 10
Ninh Bình 10
Nuremberg 10
Olive Hill 10
Amsterdam 9
Biên Hòa 9
Boston 9
Charlotte 9
Manchester 9
Turin 9
Brasília 8
Denver 8
Jeddah 8
Johannesburg 8
Marburg 8
North Bergen 8
Rio de Janeiro 8
Washington 8
Cagliari 7
Cleveland 7
Fremont 7
Greenville 7
Gwangjin-gu 7
Pavia 7
Philadelphia 7
Quito 7
Romola 7
San Francisco 7
Secaucus 7
Tampa 7
Tashkent 7
Adelaide 6
Altamura 6
Ankara 6
Ardea 6
Biloxi 6
Brussels 6
Bắc Giang 6
Totale 5.404
Nome #
High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots 520
Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates 435
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 425
Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution 376
Nucleation of Ga droplets self-assembly on GaAs(111)A substrates 355
Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates 329
High-Purity Single-Photon Emission in the Telecom O-Band from Droplet-Epitaxy InAs Quantum Dots Integrated into a GaAs/AlGaAs Planar Microcavity on Vicinal GaAs(111)A Platform 293
Local droplet etching of a vicinal InGaAs(111)A metamorphic layer 290
Quantum-confined modulated nanostructure for optoelectronic devices 288
Highly symmetrical DE QDs on GaAs(111)A at 780 nm and 1.3 µm 279
Droplet Epitaxy Quantum Dots on GaAs (111)A substrates for Quantum Information Applications 278
Exciton Fine Structure in InAs Quantum Dots with Cavity-Enhanced Emission at Telecommunication Wavelength and Grown on a GaAs (111) A Vicinal Substrate 267
Shaping the Emission Directivity of Single Quantum Dots in Dielectric Nanodisks Exploiting Mie Resonances 263
Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates 262
Temperature activated transitions in the self assembly of Ga and In droplets on (111)A vicinal substrates 244
Optically controlled dual-band quantum dot infrared photodetector 234
Conduction Band Resonant State Absorption for Quantum Dot Infrared Detectors Operating at Room Temperature 233
Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control 224
Droplet nucleation on a vicinal surface: temperature-activated transitions of a density dependence 217
Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate 210
Cavity-enhanced low fine-structure splitting telecom-wavelength InAs QDs grown on a GaAs(111)A vicinal substrate 191
Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling 190
Molecular Beam Epitaxy Growth of Atomically Flat GaAs(111)A by As2 187
Precise structure characterization of droplet epitaxial telecom-wavelength QDs for Quantum Information Technology 187
Self-Assembled Semiconductor Quantum Ring Complexes by Droplet Epitaxy: Growth and Physical Properties 185
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands 157
Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions 137
Growth of Epitaxial SiSn Films with High Sn Content for IR Converters 136
Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100) 135
Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures 134
Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers 134
Splitting of frequencies of optical phonons in tensile-strained germanium layers 131
Strained multilayer structures with pseudomorphic GeSiSn layers 131
Sn influence on MBE growth of GeSiSn/Si MQW 125
Initial Growth Stages of Si-Ge-Sn Ternary Alloys Grown on Si (100) by Low-Temperature Molecular-Beam Epitaxy 124
The ordering of Ge islands on a stepped Si(100) surface 123
Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands 121
Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures 121
Valence-band offsets in strained SiGeSn/Si layers with different tin contents 110
High-purity single and entangled photon emission from droplet-epitaxy quantum dots on GaAs(111)A platform 51
Self-assembled GaAs nanostructures on 4H-SiC(0001) with ultra-thin oxide layer 49
Totale 8.881
Categoria #
all - tutte 29.662
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 29.662


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022264 0 0 0 38 24 27 21 26 18 22 30 58
2022/2023402 47 78 42 30 22 36 1 15 16 8 85 22
2023/2024606 13 29 40 29 52 97 63 30 48 6 15 184
2024/20251.605 95 126 107 52 99 92 71 46 118 311 143 345
2025/20263.993 515 327 362 349 370 188 633 157 294 347 174 277
2026/20271.132 119 216 341 456 0 0 0 0 0 0 0 0
Totale 8.881