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TUKTAMYSHEV, ARTUR
 Distribuzione geografica
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Continente #
NA - Nord America 2.225
AS - Asia 1.831
EU - Europa 1.233
SA - Sud America 267
AF - Africa 36
OC - Oceania 9
Totale 5.601
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Nazione #
US - Stati Uniti d'America 2.173
SG - Singapore 587
CN - Cina 434
IT - Italia 292
DE - Germania 280
RU - Federazione Russa 274
HK - Hong Kong 262
VN - Vietnam 244
BR - Brasile 208
IE - Irlanda 87
KR - Corea 83
SE - Svezia 70
PK - Pakistan 59
GB - Regno Unito 54
ID - Indonesia 47
FI - Finlandia 36
CA - Canada 31
AR - Argentina 28
JP - Giappone 27
FR - Francia 26
PL - Polonia 25
BD - Bangladesh 20
IN - India 19
NL - Olanda 18
MX - Messico 13
UA - Ucraina 13
ES - Italia 12
BE - Belgio 11
DK - Danimarca 11
TR - Turchia 11
EC - Ecuador 10
IQ - Iraq 10
AU - Australia 7
MA - Marocco 7
VE - Venezuela 6
CI - Costa d'Avorio 5
PY - Paraguay 5
SA - Arabia Saudita 5
ZA - Sudafrica 5
AT - Austria 4
BG - Bulgaria 4
CL - Cile 4
KE - Kenya 4
TN - Tunisia 4
UZ - Uzbekistan 4
AE - Emirati Arabi Uniti 3
CO - Colombia 3
CZ - Repubblica Ceca 3
DZ - Algeria 3
EG - Egitto 3
NP - Nepal 3
PH - Filippine 3
AM - Armenia 2
BO - Bolivia 2
CH - Svizzera 2
DO - Repubblica Dominicana 2
GT - Guatemala 2
HU - Ungheria 2
JO - Giordania 2
MY - Malesia 2
NI - Nicaragua 2
NO - Norvegia 2
RO - Romania 2
TW - Taiwan 2
BY - Bielorussia 1
CG - Congo 1
ET - Etiopia 1
GR - Grecia 1
JM - Giamaica 1
KI - Kiribati 1
KZ - Kazakistan 1
LT - Lituania 1
LU - Lussemburgo 1
ML - Mali 1
MM - Myanmar 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
PA - Panama 1
PT - Portogallo 1
SN - Senegal 1
UY - Uruguay 1
Totale 5.601
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Città #
Ann Arbor 695
Singapore 373
Ashburn 260
Hong Kong 259
Frankfurt am Main 168
Hefei 150
Dallas 137
Milan 109
Santa Clara 89
Dublin 84
New York 83
Ho Chi Minh City 71
Seoul 70
Boardman 66
Beijing 64
Los Angeles 61
Wilmington 52
Sahiwal 48
Fairfield 46
Munich 45
Chandler 43
Hanoi 43
Jakarta 40
Shanghai 38
Buffalo 32
Chicago 24
Dong Ket 23
Houston 23
Moscow 21
São Paulo 21
Woodbridge 21
Cambridge 20
Warsaw 20
Helsinki 18
The Dalles 17
Kent 14
Princeton 14
Seattle 14
Brooklyn 13
London 11
Turku 11
Düsseldorf 10
Guangzhou 10
Nuremberg 10
Rome 10
San Diego 10
Montreal 9
Tokyo 9
Council Bluffs 8
Haiphong 8
Toronto 8
Atlanta 7
Fremont 7
Guayaquil 7
Gwangjin-gu 7
Lahore 7
Ninh Bình 7
Pavia 7
Phoenix 7
Romola 7
Secaucus 7
Adelaide 6
Altamura 6
Amsterdam 6
Ardea 6
Biên Hòa 6
Boston 6
Brussels 6
Bắc Giang 6
Charlotte 6
Ha Long 6
Heilbronn 6
Lawrence 6
Manchester 6
Quận Bình Thạnh 6
Rio de Janeiro 6
Stockholm 6
Tampa 6
Abidjan 5
Ankara 5
Cagliari 5
Da Nang 5
Denver 5
Falls Church 5
Hải Dương 5
Kilburn 5
Kongens Lyngby 5
Quận Phú Nhuận 5
San Francisco 5
Xi'an 5
Anzano Del Parco 4
Assago 4
Betim 4
Desio 4
Johannesburg 4
Kawasaki 4
Kraainem 4
Marburg 4
Massarosa 4
Novosibirsk 4
Totale 3.775
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Nome #
High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots 440
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A 367
Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates 329
Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution 301
Nucleation of Ga droplets self-assembly on GaAs(111)A substrates 274
Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates 268
Quantum-confined modulated nanostructure for optoelectronic devices 195
Highly symmetrical DE QDs on GaAs(111)A at 780 nm and 1.3 µm 180
Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates 173
High-Purity Single-Photon Emission in the Telecom O-Band from Droplet-Epitaxy InAs Quantum Dots Integrated into a GaAs/AlGaAs Planar Microcavity on Vicinal GaAs(111)A Platform 171
Droplet Epitaxy Quantum Dots on GaAs (111)A substrates for Quantum Information Applications 169
Local droplet etching of a vicinal InGaAs(111)A metamorphic layer 159
Temperature activated transitions in the self assembly of Ga and In droplets on (111)A vicinal substrates 157
Exciton Fine Structure in InAs Quantum Dots with Cavity-Enhanced Emission at Telecommunication Wavelength and Grown on a GaAs (111) A Vicinal Substrate 154
Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control 143
Droplet nucleation on a vicinal surface: temperature-activated transitions of a density dependence 143
Conduction Band Resonant State Absorption for Quantum Dot Infrared Detectors Operating at Room Temperature 139
Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate 138
Shaping the Emission Directivity of Single Quantum Dots in Dielectric Nanodisks Exploiting Mie Resonances 132
Optically controlled dual-band quantum dot infrared photodetector 130
Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling 109
Precise structure characterization of droplet epitaxial telecom-wavelength QDs for Quantum Information Technology 108
Molecular Beam Epitaxy Growth of Atomically Flat GaAs(111)A by As2 101
Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands 95
Strained multilayer structures with pseudomorphic GeSiSn layers 88
Growth of Epitaxial SiSn Films with High Sn Content for IR Converters 88
Synthesis of epitaxial films based on Ge-Si-Sn materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn heterojunctions 85
Cavity-enhanced low fine-structure splitting telecom-wavelength InAs QDs grown on a GaAs(111)A vicinal substrate 85
Self-Assembled Semiconductor Quantum Ring Complexes by Droplet Epitaxy: Growth and Physical Properties 85
Initial Growth Stages of Si-Ge-Sn Ternary Alloys Grown on Si (100) by Low-Temperature Molecular-Beam Epitaxy 84
Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures 83
The ordering of Ge islands on a stepped Si(100) surface 82
Sn influence on MBE growth of GeSiSn/Si MQW 81
Splitting of frequencies of optical phonons in tensile-strained germanium layers 80
Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers 77
Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100) 77
Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands 71
Valence-band offsets in strained SiGeSn/Si layers with different tin contents 67
Elastically strained GeSiSn layers and GeSiSn islands in multilayered periodical structures 65
Totale 5.773
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Categoria #
all - tutte 21.255
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 21.255
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021449 0 0 0 0 0 56 51 48 61 70 70 93
2021/2022448 65 70 49 38 24 27 21 26 18 22 30 58
2022/2023402 47 78 42 30 22 36 1 15 16 8 85 22
2023/2024606 13 29 40 29 52 97 63 30 48 6 15 184
2024/20251.605 95 126 107 52 99 92 71 46 118 311 143 345
2025/20262.017 515 327 362 349 370 94 0 0 0 0 0 0
Totale 5.773