In the paper we investigate the Ge island nucleation on a Si(100) surface which was annealed to obtain the diatomic steps. It was observed that the islands tend to nucleate at the step edges.
Yesin, M., Timofeev, V., Tuktamyshev, A., Nikiforov, A., Loshkarev, I. (2017). The ordering of Ge islands on a stepped Si(100) surface. In 18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2016. Institute of Physics Publishing [10.1088/1742-6596/816/1/012015].
The ordering of Ge islands on a stepped Si(100) surface
Tuktamyshev A. R.;
2017
Abstract
In the paper we investigate the Ge island nucleation on a Si(100) surface which was annealed to obtain the diatomic steps. It was observed that the islands tend to nucleate at the step edges.
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