Temperature and composition dependencies of the critical thickness of transition from two-dimensional to three-dimensional growth for GeSiSn films on Si(100) with a lattice mismatch of 1 - 5% were experimentally determined. To understand the Sn influence on growth of SiGeSn/Si multi-quantum wells, the phase diagram of surface superstructures during the growth of pure Sn on Si(100) was created. A possibility of synthesizing multilayer structures by molecular beam epitaxy was shown, and the crystal lattice constants were determined using high-resolution transmission electron microscopy. We obtained GeSiSn/Si MQW structures which demonstrated photoluminescence for the Sn content in GeSiSn layers of up to 6%.
Tuktamyshev, A., Timofeev, V., Nikiforov, A., Mashanov, V., Gutakovskii, A., Baydakova, N. (2017). Sn influence on MBE growth of GeSiSn/Si MQW. In 18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2016. Institute of Physics Publishing Ltd. [10.1088/1742-6596/816/1/012020].
Sn influence on MBE growth of GeSiSn/Si MQW
Tuktamyshev, AR
Primo
;
2017
Abstract
Temperature and composition dependencies of the critical thickness of transition from two-dimensional to three-dimensional growth for GeSiSn films on Si(100) with a lattice mismatch of 1 - 5% were experimentally determined. To understand the Sn influence on growth of SiGeSn/Si multi-quantum wells, the phase diagram of surface superstructures during the growth of pure Sn on Si(100) was created. A possibility of synthesizing multilayer structures by molecular beam epitaxy was shown, and the crystal lattice constants were determined using high-resolution transmission electron microscopy. We obtained GeSiSn/Si MQW structures which demonstrated photoluminescence for the Sn content in GeSiSn layers of up to 6%.
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