Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands

The transition from a two-domain to one-domain surface on a Si(100) substrate is investigated. It is demonstrated using reflection high-energy electron diffraction that at a temperature of 600°C and a deposition rate of 0.652 Å/s onto a Si(100) substrate pre-heated to 1000°C and inclined at an angle of 0.35°C to the plane, a series of reflections from the 1 × 2 superstructure completely vanishes at a constant flow of Si. This is attributed to the transition of the surface from monoatomic to diatomic steps. At growth rates lower than 0.652 Å/s, the transition from a two-domain to one-domain surface is also observed; with a decrease in the growth rate, the intensity ratio I2 × 1/I1 × 2 decreases and the maximum of the dependences shifts toward lower temperatures. The complete vanishing of the series of superstructural reflections after preliminary annealing at a temperature of 700°C is not observed; this series only vanishes after annealing at 900 and 1000°C. The growth of Ge islands on a Si(100) surface preliminary annealed at a temperature of 800°C is studied. It is shown that the islands tend to nucleate at the step edges. A mechanism of Ge island ordering on the Si(100) surface is proposed.