Sfoglia per Autore
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology
2018 Crupi, G; Raffo, A; Vadalà, V; Vannini, G; Caddemi, A
Extended operation of class-F power amplifiers using input waveform engineering
2017 Cipriani, E; Colantonio, P; Giannini, F; Raffo, A; Vadala, V; Bosi, G; Vannini, G
Waveform engineering: State-of-the-art and future trends (invited paper)
2017 Raffo, A; Vadala', V; Bosi, G; Trevisan, F; Avolio, G; Vannini, G
A New Dynamic-Bias Measurement Setup for Nonlinear Transistor Model Identification
2017 Vadala', V; Raffo, A; Avolio, G; Marchetti, M; Schreurs, D; Vannini, G
A procedure for the extraction of a nonlinear microwave GaN FET model
2017 Avolio, G; Vadala', V; Angelov, I; Raffo, A; Marchetti, M; Vannini, G; Schreurs, D
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation
2017 Bosi, G; Raffo, A; Vadalà, V; Trevisan, F; Formicone, G; Burger, J; Custer, J; Vannini, G
Empowering GaN HEMT models: The gateway for power amplifier design
2017 Crupi, G; Vadala', V; Colantonio, P; Cipriani, E; Caddemi, A; Vannini, G; Schreurs, D
75-VDC GaN technology investigation from a degradation perspective
2017 Trevisan, F; Raffo, A; Bosi, G; Vadala', V; Vannini, G; Formicone, G; Burger, J; Custer, J
Thermal characterization of high-power GaN HEMTs up to 65 GHz
2017 Petrocchi, A; Crupi, G; Vadala', V; Avolio, G; Raffo, A; Schreurs, D; Caddemi, A; Vannini, G
Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors
2016 Avolio, G; Raffo, A; Vadala', V; Vannini, G; Schreurs, D
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design
2016 Vadala', V; Raffo, A; Bosi, G; Vannini, G; Colantonio, P; Giannini, F
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance
2016 Bosi, G; Raffo, A; Vadala', V; Trevisan, F; Vannini, G; Cengiz, O; Sen, O; Ozbay, E
A new description of fast charge-trapping effects in GaN FETs
2015 Bosi, G; Raffo, A; Vadala', V; Vannini, G
Extraction of accurate GaN HEMT model for high-efficiency power amplifier design
2015 Vadalà, V; Raffo, A; Avolio, G; Marchetti, M; Schreurs, D; Vannini, G
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering
2015 Cipriani, E; Colantonio, P; Giannini, F; Bosi, G; Raffo, A; Vadalà, V; Vannini, G
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches
2015 Raffo, A; Bosi, G; Vadala', V; Vannini, G
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data
2015 Raffo, A; Colantonio, P; Cipriani, E; Vadalà, V; Bosi, G; Martin Guerrero, T; Vannini, G; Giannini, F
A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique
2015 Raffo, A; Avolio, G; Vadala', V; Schreurs, D; Vannini, G
Evaluation of FET performance and restrictions by low-frequency measurements
2014 Vadalà, V; Raffo, A; Colantonio, P; Cipriani, E; Giannini, F; Lanzieri, C; Pantellini, A; Nalli, A; Bosi, G; Vannini, G
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements
2014 Bosi, G; Raffo, A; Nalli, A; Vadalà, V; Vannini, G
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