Sfoglia per Autore
An Improved Transistor Modeling Methodology Exploiting the Quasi-Static Approximation
2021 Jarndal, A; Crupi, G; Raffo, A; Vadalà, V; Vannini, G
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling
2021 Vadala', V; Raffo, A; Colzani, A; Fumagalli, M; Sivverini, G; Bosi, G; Vannini, G
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications
2021 Vadalà, V; Raffo, A; Bosi, G; Giofre, R; Vannini, G
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements
2021 Bosi, G; Vadala', V; Giofre, R; Raffo, A; Vannini, G
Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design
2021 Bosi, G; Raffo, A; Giofre, R; Vadala', V; Vannini, G; Limiti, E
Scalability of Multifinger HEMT Performance
2020 Crupi, G; Raffo, A; Vadala, V; Vannini, G; Schreurs, D; Caddemi, A
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design
2020 Bosi, G; Raffo, A; Vadalà, V; Vannini, G; Avolio, G; Marchetti, M; Giofre', R; Colantonio, P; Limiti, E
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations
2020 Raffo, A; Vadala, V; Yamamoto, H; Kikuchi, K; Bosi, G; Ui, N; Inoue, K; Vannini, G
Nonlinear Characterization of GaN Transistors under Dynamic Bias Operation
2020 Vadala, V; Vannini, G
High-periphery GaN HEMT modeling up to 65 GHz and 200 °C
2019 Crupi, G; Raffo, A; Vadalà, V; Vannini, G; Caddemi, A
Temperature Dependent Small-Signal Neural Modeling of High-Periphery GaN HEMTs
2019 Marinkovic, Z; Crupi, G; Vadala', V; Raffo, A; Caddemi, A; Markovic, V; Schreurs, D
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements
2019 Luo, P; Schnieder, F; Bengtsson, O; Vadalà, V; Raffo, A; Heinrich, W; Rudolph, M
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study
2019 Avolio, G; Raffo, A; Marchetti, M; Bosi, G; Vadalà, V; Vannini, G
GaN HEMT Model with Enhanced Accuracy under Back-off Operation
2019 Vadalà, V; Raffo, A; Kikuchi, K; Yamamoto, H; Bosi, G; Inoue, K; Ui, N; Vannini, G
Technology-Independent Analysis of the Double Current-Gain Peak in Millimeter-Wave FETs
2018 Crupi, G; Raffo, A; Vadala, V; Avolio, G; Schreurs, D; Vannini, G; Caddemi, A
Current-gain in FETs beyond cut-off frequency
2018 Crupi, G; Raffo, A; Vadalà, V; Vannini, G; Caddemi, A
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements
2018 Kikuchi, K; Yamamoto, H; Ui, N; Inoue, K; Vadalà, V; Bosi, G; Raffo, A; Vannini, G
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems
2018 Raffo, A; Avolio, G; Vadalà, V; Bosi, G; Vannini, G; Schreurs, D
A new study on the temperature and bias dependence of the kink effects in S22 and h21 for the GaN HEMT technology
2018 Crupi, G; Raffo, A; Vadalà, V; Vannini, G; Caddemi, A
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers
2018 Bosi, G; Raffo, A; Trevisan, F; Vadala, V; Crupi, G; Vannini, G
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