SCALISE, EMILIO
 Distribuzione geografica
Continente #
NA - Nord America 3.529
EU - Europa 1.880
AS - Asia 628
AF - Africa 19
SA - Sud America 8
OC - Oceania 4
Continente sconosciuto - Info sul continente non disponibili 1
Totale 6.069
Nazione #
US - Stati Uniti d'America 3.501
IT - Italia 540
DE - Germania 510
CN - Cina 287
SE - Svezia 260
IE - Irlanda 198
HK - Hong Kong 93
VN - Vietnam 82
RU - Federazione Russa 79
SG - Singapore 69
GB - Regno Unito 63
UA - Ucraina 61
FR - Francia 43
ES - Italia 28
CA - Canada 27
JP - Giappone 27
DK - Danimarca 26
BE - Belgio 16
IN - India 16
FI - Finlandia 12
ID - Indonesia 11
MA - Marocco 11
NL - Olanda 11
PK - Pakistan 8
TW - Taiwan 8
CH - Svizzera 7
KR - Corea 7
BD - Bangladesh 6
PL - Polonia 6
BG - Bulgaria 5
BR - Brasile 5
AT - Austria 4
AU - Australia 4
CI - Costa d'Avorio 4
NO - Norvegia 4
GR - Grecia 3
TR - Turchia 3
AR - Argentina 2
IR - Iran 2
PH - Filippine 2
SA - Arabia Saudita 2
SC - Seychelles 2
CZ - Repubblica Ceca 1
EC - Ecuador 1
EU - Europa 1
HU - Ungheria 1
IL - Israele 1
IQ - Iraq 1
LK - Sri Lanka 1
MX - Messico 1
NG - Nigeria 1
OM - Oman 1
RO - Romania 1
RS - Serbia 1
TH - Thailandia 1
ZA - Sudafrica 1
Totale 6.069
Città #
Ann Arbor 1.258
Frankfurt am Main 456
Fairfield 296
Chandler 262
Milan 215
Dublin 190
Wilmington 186
Ashburn 173
Woodbridge 157
Dearborn 138
Houston 133
Seattle 120
Cambridge 114
New York 99
Princeton 94
Hong Kong 85
Dong Ket 68
Jacksonville 53
Shanghai 45
Singapore 40
Altamura 39
Lawrence 38
Nanjing 37
San Diego 30
Guangzhou 23
Beijing 21
Los Angeles 21
Monza 19
Shenyang 17
Umeda 17
Andover 16
Vigano San Martino 16
Chicago 14
Paris 14
Turin 14
Hangzhou 13
Hebei 12
Jinan 12
Tianjin 12
Dalmine 11
Jakarta 11
Sacramento 11
Toronto 11
Fremont 9
Pune 9
Jiaxing 8
Kunming 8
Norwalk 8
Brescia 7
Cinisello Balsamo 7
London 7
Nanchang 7
Ningbo 7
Zhengzhou 7
Ardea 6
Berlin 6
Boardman 6
Brussels 6
Cagliari 6
Chittagong 6
Colle 6
College Station 6
Edmonton 6
Fornovo San Giovanni 6
Rome 6
Calusco d'Adda 5
Casablanca 5
Cesano Maderno 5
Chiavenna 5
Chiyoda-ku 5
Grafing 5
Karachi 5
Kiev 5
Leipzig 5
Leuven 5
Lovere 5
Taipei 5
Valladolid 5
Verdello 5
Abidjan 4
Amsterdam 4
Changsha 4
Council Bluffs 4
Desio 4
Hefei 4
Heidelberg 4
Lachine 4
Lappeenranta 4
Liscate 4
Mountain View 4
Ottawa 4
Poznan 4
Sai Kung 4
São Paulo 4
Torino 4
Washington 4
Ansan-si 3
Bergamo 3
Castano Primo 3
Daejeon 3
Totale 4.911
Nome #
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 309
Stability and universal encapsulation of epitaxial Xenes 274
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 271
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 226
Exciton-driven change of phonon modes causes strong temperature dependent bandgap shift in nanoclusters 221
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 215
Tailoring the electronic properties of semiconducting nanocrystal-solids 206
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 205
Getting through the Nature of Silicene: An sp(2)-sp(3) Two-Dimensional Silicon Nanosheet 170
Surface chemistry and buried interfaces in all-inorganic nanocrystalline solids 163
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 155
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 152
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 139
Vibrational Properties of Defective Oxides and 2D Nanolattices 136
Vibrational properties of epitaxial silicene layers on (111) Ag 136
Theoretical aspects of graphene-like group IV semiconductors 134
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 133
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale 129
Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates 128
Two-dimensional Si nanosheets with local hexagonal structure on a MoS 2 surface 126
Silicene on non-metallic substrates: Recent theoretical and experimental advances 121
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 116
Atomic scale insights into Sn on Ge(100): From submonolayers to the formation of Sn wetting layers 114
Hexagonal Diamond phase of Si and Ge by nanoindentation 112
Morphological evolution and compositional segregation effects in core-shell nanowires 111
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 107
Predicting 2D silicon allotropes on SnS2 104
Structural and chemical stabilization of the epitaxial silicene 102
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 101
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS 2 101
Interaction of silicene and germanene with non-metallic substrates 99
Theoretical study of transition metal dichalcogenides 93
Interaction of germanene with (0001)ZnSe surfaces: A theoretical study 92
Inelastic electron tunneling spectroscopy of HfO 2 gate stacks: A study based on first-principles modeling 92
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 90
New approaches and understandings in the growth of cubic silicon carbide 90
Synthesis of silicene on alternative substrates 88
First-principles electronic functionalization of silicene and germanene by adatom chemisorption 84
First-principles study of strained 2D MoS2 83
Interaction of silicene and germanene with non-metallic substrates 80
Structural and vibrational properties of amorphous GeO2from first-principles 79
Hexagonal Si and Ge polytypes for silicon photonics 68
Two-dimensional hexagonal tin: Ab initio geometry, stability, electronic structure and functionalization 67
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 67
Theoretical study of silicene and germanene 65
Electronic properties of hydrogenated silicene and germanene 65
Theoretical study of Ge dangling bonds in GeO 2 and correlation with ESR results at Ge/GeO 2 interfaces 64
Unveiling Planar Defects in Hexagonal Group IV Materials 63
An electric field tunable energy band gap at silicene/(0001) ZnS interfaces 61
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 57
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 50
Indirect Exciton–Phonon Dynamics in MoS2 Revealed by Ultrafast Electron Diffraction 46
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 39
Template effect of the nanowire core on the growth of hexagonal Si/Ge shell:a first principles modeling 39
Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate 31
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 29
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 18
Totale 6.516
Categoria #
all - tutte 21.840
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 21.840


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.108 76 37 122 96 90 153 157 96 122 72 65 22
2020/20211.168 23 49 100 87 91 102 71 147 92 121 90 195
2021/20221.172 107 85 154 99 63 93 69 64 65 98 105 170
2022/20231.480 184 403 149 152 82 176 18 77 86 45 57 51
2023/2024979 52 59 27 37 139 216 139 59 84 44 37 86
2024/202585 85 0 0 0 0 0 0 0 0 0 0 0
Totale 6.516