SCALISE, EMILIO
 Distribuzione geografica
Continente #
NA - Nord America 4.158
EU - Europa 2.788
AS - Asia 1.722
SA - Sud America 140
AF - Africa 43
OC - Oceania 5
Continente sconosciuto - Info sul continente non disponibili 1
Totale 8.857
Nazione #
US - Stati Uniti d'America 4.097
IT - Italia 814
DE - Germania 596
SG - Singapore 517
RU - Federazione Russa 481
HK - Hong Kong 424
CN - Cina 374
SE - Svezia 265
IE - Irlanda 205
BR - Brasile 123
VN - Vietnam 122
FR - Francia 78
GB - Regno Unito 78
JP - Giappone 73
UA - Ucraina 71
ID - Indonesia 59
CA - Canada 47
ES - Italia 42
IN - India 36
KR - Corea 33
FI - Finlandia 29
DK - Danimarca 26
AT - Austria 19
BD - Bangladesh 18
NL - Olanda 18
BE - Belgio 16
MA - Marocco 15
PK - Pakistan 14
ZA - Sudafrica 13
PL - Polonia 12
CH - Svizzera 10
MX - Messico 9
TW - Taiwan 9
IQ - Iraq 7
SA - Arabia Saudita 7
NO - Norvegia 6
BG - Bulgaria 5
CI - Costa d'Avorio 5
TR - Turchia 5
AR - Argentina 4
AU - Australia 4
GR - Grecia 4
PH - Filippine 4
VE - Venezuela 4
CO - Colombia 3
OM - Oman 3
SI - Slovenia 3
CZ - Repubblica Ceca 2
DZ - Algeria 2
EC - Ecuador 2
ET - Etiopia 2
GE - Georgia 2
IR - Iran 2
KE - Kenya 2
LK - Sri Lanka 2
NG - Nigeria 2
NP - Nepal 2
PY - Paraguay 2
SC - Seychelles 2
TT - Trinidad e Tobago 2
UZ - Uzbekistan 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
AZ - Azerbaigian 1
CL - Cile 1
EU - Europa 1
HN - Honduras 1
HU - Ungheria 1
IL - Israele 1
IS - Islanda 1
JM - Giamaica 1
LB - Libano 1
LT - Lituania 1
LV - Lettonia 1
MD - Moldavia 1
PA - Panama 1
PE - Perù 1
PS - Palestinian Territory 1
PT - Portogallo 1
PW - Palau 1
RO - Romania 1
RS - Serbia 1
TH - Thailandia 1
Totale 8.857
Città #
Ann Arbor 1.258
Frankfurt am Main 476
Hong Kong 416
Singapore 357
Milan 298
Fairfield 296
Chandler 262
Ashburn 206
Dublin 191
Wilmington 186
Woodbridge 157
Dearborn 138
Houston 134
Seattle 123
Cambridge 114
Santa Clara 113
New York 102
Princeton 94
Dong Ket 68
Jakarta 57
Jacksonville 54
Shanghai 48
Beijing 44
Moscow 42
Hefei 40
Miyamae Ku 40
Altamura 39
Lawrence 38
Monza 38
Nanjing 37
Los Angeles 35
Munich 32
San Diego 30
Seoul 26
Guangzhou 25
Chicago 20
Council Bluffs 18
São Paulo 18
Dalmine 17
Paris 17
Shenyang 17
Umeda 17
Andover 16
Como 16
Vigano San Martino 16
Hangzhou 15
Ho Chi Minh City 15
Nuremberg 15
Turin 14
Toronto 13
Hebei 12
Jinan 12
Kent 12
Lappeenranta 12
Sacramento 12
Tianjin 12
Brescia 11
Dallas 11
Desio 11
Hanoi 11
Parma 10
Pune 10
Bergamo 9
Fremont 9
Helsinki 9
Rome 9
Spirano 9
Valladolid 9
Cinisello Balsamo 8
Jiaxing 8
Kunming 8
London 8
Norwalk 8
Zhengzhou 8
Berlin 7
Nanchang 7
Ningbo 7
Verdellino 7
Amsterdam 6
Ardea 6
Boardman 6
Boston 6
Brussels 6
Cagliari 6
Casablanca 6
Chittagong 6
Colle 6
College Station 6
Edmonton 6
Fornovo San Giovanni 6
Kitchener 6
Naples 6
Stockholm 6
Tullamore 6
Abidjan 5
Calusco d'Adda 5
Cesano Maderno 5
Changsha 5
Chiavenna 5
Chiyoda-ku 5
Totale 6.250
Nome #
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 361
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 341
Stability and universal encapsulation of epitaxial Xenes 334
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 267
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 258
Tailoring the electronic properties of semiconducting nanocrystal-solids 252
Exciton-driven change of phonon modes causes strong temperature dependent bandgap shift in nanoclusters 248
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 239
Surface chemistry and buried interfaces in all-inorganic nanocrystalline solids 210
Getting through the Nature of Silicene: An sp(2)-sp(3) Two-Dimensional Silicon Nanosheet 203
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 203
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 196
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 194
Hexagonal Diamond phase of Si and Ge by nanoindentation 184
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 170
Two-dimensional Si nanosheets with local hexagonal structure on a MoS 2 surface 169
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 169
Vibrational properties of epitaxial silicene layers on (111) Ag 168
Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates 163
Vibrational Properties of Defective Oxides and 2D Nanolattices 162
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale 162
Theoretical aspects of graphene-like group IV semiconductors 157
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 157
Morphological evolution and compositional segregation effects in core-shell nanowires 154
Hexagonal Si and Ge polytypes for silicon photonics 152
Silicene on non-metallic substrates: Recent theoretical and experimental advances 151
Structural and chemical stabilization of the epitaxial silicene 143
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 138
Atomic scale insights into Sn on Ge(100): From submonolayers to the formation of Sn wetting layers 136
Predicting 2D silicon allotropes on SnS2 130
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 124
New approaches and understandings in the growth of cubic silicon carbide 123
Inelastic electron tunneling spectroscopy of HfO 2 gate stacks: A study based on first-principles modeling 122
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 120
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS 2 119
Synthesis of silicene on alternative substrates 118
Interaction of silicene and germanene with non-metallic substrates 117
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation 116
Theoretical study of transition metal dichalcogenides 116
Indirect Exciton–Phonon Dynamics in MoS2 Revealed by Ultrafast Electron Diffraction 114
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 110
First-principles electronic functionalization of silicene and germanene by adatom chemisorption 110
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 109
Interaction of germanene with (0001)ZnSe surfaces: A theoretical study 108
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 107
Interaction of silicene and germanene with non-metallic substrates 103
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 101
First-principles study of strained 2D MoS2 101
Unveiling Planar Defects in Hexagonal Group IV Materials 98
Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate 94
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 93
Theoretical study of Ge dangling bonds in GeO 2 and correlation with ESR results at Ge/GeO 2 interfaces 91
Structural and vibrational properties of amorphous GeO2from first-principles 89
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 86
Electronic properties of hydrogenated silicene and germanene 84
Two-dimensional hexagonal tin: Ab initio geometry, stability, electronic structure and functionalization 83
Template effect of the nanowire core on the growth of hexagonal Si/Ge shell:a first principles modeling 81
Theoretical study of silicene and germanene 79
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation 78
An electric field tunable energy band gap at silicene/(0001) ZnS interfaces 78
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 77
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation 66
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 62
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained 62
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure 58
Totale 9.368
Categoria #
all - tutte 35.511
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 35.511


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.168 23 49 100 87 91 102 71 147 92 121 90 195
2021/20221.172 107 85 154 99 63 93 69 64 65 98 105 170
2022/20231.480 184 403 149 152 82 176 18 77 86 45 57 51
2023/2024979 52 59 27 37 139 216 139 59 84 44 37 86
2024/20252.639 108 312 130 182 217 141 134 107 263 388 241 416
2025/2026298 298 0 0 0 0 0 0 0 0 0 0 0
Totale 9.368