Bicocca Open Archive

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SCALISE, EMILIO
 Distribuzione geografica
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Continente #
NA - Nord America 4.993
EU - Europa 3.171
AS - Asia 3.109
SA - Sud America 449
AF - Africa 74
OC - Oceania 16
Continente sconosciuto - Info sul continente non disponibili 1
Totale 11.813
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Nazione #
US - Stati Uniti d'America 4.887
SG - Singapore 1.226
IT - Italia 952
CN - Cina 772
DE - Germania 622
RU - Federazione Russa 506
HK - Hong Kong 449
BR - Brasile 366
SE - Svezia 278
VN - Vietnam 231
IE - Irlanda 208
FR - Francia 126
GB - Regno Unito 118
JP - Giappone 90
UA - Ucraina 83
ID - Indonesia 73
IN - India 72
CA - Canada 67
ES - Italia 59
FI - Finlandia 54
KR - Corea 51
BD - Bangladesh 31
AR - Argentina 30
MX - Messico 30
DK - Danimarca 29
ZA - Sudafrica 29
PL - Polonia 24
PK - Pakistan 23
BE - Belgio 20
AT - Austria 19
NL - Olanda 19
MA - Marocco 18
IQ - Iraq 16
AU - Australia 14
TW - Taiwan 14
CH - Svizzera 12
CO - Colombia 12
EC - Ecuador 10
TR - Turchia 10
SA - Arabia Saudita 9
VE - Venezuela 9
CL - Cile 6
LT - Lituania 6
NO - Norvegia 6
PY - Paraguay 6
AE - Emirati Arabi Uniti 5
BG - Bulgaria 5
CI - Costa d'Avorio 5
DZ - Algeria 5
PE - Perù 5
GR - Grecia 4
HU - Ungheria 4
KE - Kenya 4
OM - Oman 4
PH - Filippine 4
TN - Tunisia 4
GE - Georgia 3
IL - Israele 3
SI - Slovenia 3
TH - Thailandia 3
UY - Uruguay 3
UZ - Uzbekistan 3
AZ - Azerbaigian 2
CZ - Repubblica Ceca 2
EG - Egitto 2
ET - Etiopia 2
HN - Honduras 2
IR - Iran 2
LK - Sri Lanka 2
MD - Moldavia 2
NG - Nigeria 2
NP - Nepal 2
PS - Palestinian Territory 2
PT - Portogallo 2
RO - Romania 2
RS - Serbia 2
SC - Seychelles 2
TT - Trinidad e Tobago 2
AL - Albania 1
AM - Armenia 1
BB - Barbados 1
BH - Bahrain 1
BO - Bolivia 1
BY - Bielorussia 1
BZ - Belize 1
EU - Europa 1
GT - Guatemala 1
GY - Guiana 1
IS - Islanda 1
JM - Giamaica 1
JO - Giordania 1
KZ - Kazakistan 1
LB - Libano 1
LV - Lettonia 1
MY - Malesia 1
PA - Panama 1
PW - Palau 1
SN - Senegal 1
SY - Repubblica araba siriana 1
TV - Tuvalu 1
Totale 11.813
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Città #
Ann Arbor 1.259
Singapore 664
Frankfurt am Main 481
Hong Kong 440
Ashburn 396
Milan 356
Fairfield 296
Chandler 262
Dublin 193
Wilmington 187
Woodbridge 157
Dearborn 138
Houston 137
Beijing 134
Dallas 134
Seattle 125
New York 123
Santa Clara 123
Cambridge 116
Los Angeles 109
Hefei 95
Princeton 94
Dong Ket 68
Jakarta 61
Ho Chi Minh City 55
Jacksonville 55
Shanghai 52
Buffalo 51
São Paulo 48
Moscow 42
Seoul 41
Miyamae Ku 40
Altamura 39
Lawrence 38
Monza 38
The Dalles 38
Chicago 37
Nanjing 37
Munich 34
Hanoi 30
San Diego 30
Guangzhou 28
Paris 27
Council Bluffs 24
Rome 22
Lappeenranta 20
Tianjin 20
Brooklyn 18
Shenyang 18
Stockholm 18
Dalmine 17
Denver 17
Hangzhou 17
Johannesburg 17
Umeda 17
Andover 16
Como 16
Montreal 16
Toronto 16
Vigano San Martino 16
Helsinki 15
Nuremberg 15
Boston 14
Turin 14
Warsaw 14
Brescia 13
Chennai 13
Jinan 13
Hebei 12
Kent 12
London 12
Naples 12
Querétaro 12
Sacramento 12
Tokyo 12
Berlin 11
Desio 11
Haiphong 11
Phoenix 11
Poplar 11
Pune 11
Boardman 10
Casandrino 10
Dhaka 10
Manchester 10
Parma 10
Ribeirão Preto 10
Salt Lake City 10
Taipei 10
Turku 10
Zhengzhou 10
Bergamo 9
Changsha 9
Fremont 9
Spirano 9
Valladolid 9
Atlanta 8
Cinisello Balsamo 8
Jiaxing 8
Kunming 8
Totale 7.651
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Nome #
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 397
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 393
Stability and universal encapsulation of epitaxial Xenes 392
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 309
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 300
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 282
Tailoring the electronic properties of semiconducting nanocrystal-solids 278
Exciton-driven change of phonon modes causes strong temperature dependent bandgap shift in nanoclusters 269
Hexagonal Diamond phase of Si and Ge by nanoindentation 260
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 260
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 245
Surface chemistry and buried interfaces in all-inorganic nanocrystalline solids 239
Getting through the Nature of Silicene: An sp(2)-sp(3) Two-Dimensional Silicon Nanosheet 237
Two-dimensional Si nanosheets with local hexagonal structure on a MoS 2 surface 235
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 230
Hexagonal Si and Ge polytypes for silicon photonics 208
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 201
Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates 201
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 197
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 196
Vibrational Properties of Defective Oxides and 2D Nanolattices 188
Morphological evolution and compositional segregation effects in core-shell nanowires 186
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation 185
Structural and chemical stabilization of the epitaxial silicene 185
Vibrational properties of epitaxial silicene layers on (111) Ag 182
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 180
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale 179
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 174
Theoretical aspects of graphene-like group IV semiconductors 174
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 172
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 171
Silicene on non-metallic substrates: Recent theoretical and experimental advances 169
Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate 167
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 164
Atomic scale insights into Sn on Ge(100): From submonolayers to the formation of Sn wetting layers 163
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation 158
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 155
Indirect Exciton–Phonon Dynamics in MoS2 Revealed by Ultrafast Electron Diffraction 155
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 150
Synthesis of silicene on alternative substrates 148
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 148
New approaches and understandings in the growth of cubic silicon carbide 143
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 142
Predicting 2D silicon allotropes on SnS2 141
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 138
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 138
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained 134
Inelastic electron tunneling spectroscopy of HfO 2 gate stacks: A study based on first-principles modeling 134
Theoretical study of transition metal dichalcogenides 131
Interaction of silicene and germanene with non-metallic substrates 129
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure 128
First-principles electronic functionalization of silicene and germanene by adatom chemisorption 126
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation 124
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 124
Interaction of silicene and germanene with non-metallic substrates 122
First-principles study of strained 2D MoS2 120
Unveiling Planar Defects in Hexagonal Group IV Materials 120
Interaction of germanene with (0001)ZnSe surfaces: A theoretical study 119
Structural and vibrational properties of amorphous GeO2from first-principles 109
Theoretical study of Ge dangling bonds in GeO 2 and correlation with ESR results at Ge/GeO 2 interfaces 109
Electronic properties of hydrogenated silicene and germanene 104
An electric field tunable energy band gap at silicene/(0001) ZnS interfaces 104
Two-dimensional hexagonal tin: Ab initio geometry, stability, electronic structure and functionalization 100
Template effect of the nanowire core on the growth of hexagonal Si/Ge shell:a first principles modeling 100
Theoretical study of silicene and germanene 95
TEM analysis of Textured Silicon Polymorph Crystals obtained via Nanoindentation and Annealing 69
Electronic Properties of Perfect Dislocations in Germanium: A First-Principles Study 66
Interaction of Dopants with the I3-Type Basal Stacking Fault in Hexagonal-Diamond Si 57
Origin and Evolution of I3 defects in Hexagonal Silicon and Germanium 49
Planar Hexagonal Germanium Grown on Cadmium Sulfide Substrate by Low-Energy Plasma-Enhanced Chemical Vapor Deposition. 44
Unraveling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon and Germanium 44
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 39
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 38
Towards Hexagonal Germanium via Nanoindentation 38
Pressure-dependent kinetics of phase transitions in Si and Ge using machine learning interatomic potentials 35
Electronic and optical properties of stacking faults in hexagonal germanium. 33
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 29
Dopant interactions with I3-basal stacking faults in hexagonal silicon: first-principles insights into fundamental mechanisms. 24
Totale 12.381
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Categoria #
all - tutte 43.034
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 43.034
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021818 0 0 0 0 0 102 71 147 92 121 90 195
2021/20221.172 107 85 154 99 63 93 69 64 65 98 105 170
2022/20231.480 184 403 149 152 82 176 18 77 86 45 57 51
2023/2024979 52 59 27 37 139 216 139 59 84 44 37 86
2024/20252.639 108 312 130 182 217 141 134 107 263 388 241 416
2025/20263.311 515 395 480 580 1.031 310 0 0 0 0 0 0
Totale 12.381