Bicocca Open Archive

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SCALISE, EMILIO
 Distribuzione geografica
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Continente #
NA - Nord America 9.137
AS - Asia 4.360
EU - Europa 4.249
SA - Sud America 619
Continente sconosciuto - Info sul continente non disponibili 581
AF - Africa 136
OC - Oceania 22
Totale 19.104
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Nazione #
US - Stati Uniti d'America 8.571
IT - Italia 1.629
SG - Singapore 1.572
CN - Cina 892
DE - Germania 660
VN - Vietnam 560
RU - Federazione Russa 522
HK - Hong Kong 480
BR - Brasile 458
CA - Canada 413
SE - Svezia 286
FR - Francia 248
IE - Irlanda 211
GB - Regno Unito 167
IN - India 139
BD - Bangladesh 116
JP - Giappone 107
UA - Ucraina 92
KR - Corea 87
ID - Indonesia 85
ES - Italia 78
FI - Finlandia 73
NL - Olanda 60
AR - Argentina 58
IQ - Iraq 48
MX - Messico 47
PK - Pakistan 41
ZA - Sudafrica 41
TR - Turchia 37
CH - Svizzera 36
DK - Danimarca 29
PL - Polonia 29
MA - Marocco 26
BE - Belgio 25
CO - Colombia 25
SA - Arabia Saudita 24
TW - Taiwan 24
AT - Austria 23
PH - Filippine 23
EC - Ecuador 21
AU - Australia 20
CL - Cile 18
HN - Honduras 16
JM - Giamaica 16
TT - Trinidad e Tobago 16
CR - Costa Rica 15
UZ - Uzbekistan 15
MY - Malesia 14
KE - Kenya 13
VE - Venezuela 13
HU - Ungheria 11
IL - Israele 11
TH - Thailandia 11
GR - Grecia 10
PR - Porto Rico 10
AE - Emirati Arabi Uniti 9
AZ - Azerbaigian 9
DZ - Algeria 9
GT - Guatemala 9
NO - Norvegia 9
PY - Paraguay 9
TN - Tunisia 9
ET - Etiopia 8
JO - Giordania 8
NP - Nepal 8
SC - Seychelles 8
OM - Oman 7
SV - El Salvador 7
CI - Costa d'Avorio 6
LT - Lituania 6
PS - Palestinian Territory 6
PT - Portogallo 6
RS - Serbia 6
SI - Slovenia 6
UY - Uruguay 6
BG - Bulgaria 5
EE - Estonia 5
GP - Guadalupe 5
PE - Perù 5
GE - Georgia 4
KZ - Kazakistan 4
LB - Libano 4
SN - Senegal 4
AL - Albania 3
AM - Armenia 3
BH - Bahrain 3
BO - Bolivia 3
BY - Bielorussia 3
CW - ???statistics.table.value.countryCode.CW??? 3
CZ - Repubblica Ceca 3
GY - Guiana 3
LY - Libia 3
NI - Nicaragua 3
AO - Angola 2
BB - Barbados 2
EG - Egitto 2
HR - Croazia 2
IR - Iran 2
LK - Sri Lanka 2
MD - Moldavia 2
Totale 18.503
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Città #
Ann Arbor 1.260
Ashburn 1.015
Singapore 874
San Jose 732
Milan 555
Frankfurt am Main 496
Hong Kong 462
Council Bluffs 325
Fairfield 296
Chandler 262
Toronto 239
Dublin 195
Wilmington 188
New York 184
Los Angeles 176
Santa Clara 171
Dallas 161
Woodbridge 157
Ho Chi Minh City 154
Houston 149
Beijing 148
Dearborn 140
Seattle 137
Chicago 129
Cambridge 118
Hanoi 114
The Dalles 100
Princeton 96
Hefei 95
Rome 84
Seoul 73
Buffalo 72
Columbus 72
Dong Ket 68
Lauterbourg 66
Jakarta 64
Jacksonville 61
São Paulo 61
Shanghai 58
Montreal 43
Moscow 43
Monza 41
Atlanta 40
Miyamae Ku 40
Altamura 39
Lawrence 38
Turin 38
Nanjing 37
San Diego 35
Munich 34
Phoenix 34
Brooklyn 32
Naples 31
Sesto San Giovanni 31
Paris 30
Guangzhou 29
Helsinki 27
Philadelphia 27
Haiphong 26
Denver 23
Newark 22
Tokyo 22
Zurich 22
Da Nang 21
Johannesburg 21
London 21
Washington 21
Lappeenranta 20
North Bergen 20
Tianjin 20
Boardman 19
Brescia 19
Chennai 19
Stockholm 19
Orem 18
Shenyang 18
Warsaw 18
Boston 17
Dalmine 17
Hangzhou 17
Sacramento 17
Umeda 17
Andover 16
Como 16
Nuremberg 16
Vigano San Martino 16
Baghdad 15
Tashkent 15
Charlotte 14
Dhaka 14
Figino 14
Miami 14
Jinan 13
Pune 13
Queens 13
Querétaro 13
Amsterdam 12
Berlin 12
Hebei 12
Kent 12
Totale 11.200
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Nome #
Stability and universal encapsulation of epitaxial Xenes 490
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 478
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 460
Vibrational Properties of Defective Oxides and 2D Nanolattices 454
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 411
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 395
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 379
Hexagonal Diamond phase of Si and Ge by nanoindentation 339
Tailoring the electronic properties of semiconducting nanocrystal-solids 337
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 331
Two-dimensional Si nanosheets with local hexagonal structure on a MoS 2 surface 322
Exciton-driven change of phonon modes causes strong temperature dependent bandgap shift in nanoclusters 321
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 315
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 313
Getting through the Nature of Silicene: An sp(2)-sp(3) Two-Dimensional Silicon Nanosheet 310
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 309
Surface chemistry and buried interfaces in all-inorganic nanocrystalline solids 302
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained 293
Hexagonal Si and Ge polytypes for silicon photonics 292
Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates 281
Indirect Exciton–Phonon Dynamics in MoS2 Revealed by Ultrafast Electron Diffraction 279
Structural and chemical stabilization of the epitaxial silicene 278
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 268
Morphological evolution and compositional segregation effects in core-shell nanowires 265
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation 263
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 262
Planar Hexagonal Germanium Grown on Cadmium Sulfide Substrate by Low-Energy Plasma-Enhanced Chemical Vapor Deposition. 262
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 261
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 260
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 258
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 257
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 254
Theoretical aspects of graphene-like group IV semiconductors 241
Silicene on non-metallic substrates: Recent theoretical and experimental advances 235
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 234
Vibrational properties of epitaxial silicene layers on (111) Ag 231
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 230
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation 229
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale 229
Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate 226
New approaches and understandings in the growth of cubic silicon carbide 225
Atomic scale insights into Sn on Ge(100): From submonolayers to the formation of Sn wetting layers 219
TEM analysis of Textured Silicon Polymorph Crystals obtained via Nanoindentation and Annealing 218
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 213
Origin and Evolution of I3 defects in Hexagonal Silicon and Germanium 208
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 202
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure 200
Predicting 2D silicon allotropes on SnS2 198
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 195
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation 192
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 191
First-principles study of strained 2D MoS2 190
Synthesis of silicene on alternative substrates 186
Inelastic electron tunneling spectroscopy of HfO 2 gate stacks: A study based on first-principles modeling 186
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 185
Unveiling Planar Defects in Hexagonal Group IV Materials 183
Theoretical study of transition metal dichalcogenides 181
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 181
Interaction of silicene and germanene with non-metallic substrates 178
Interaction of silicene and germanene with non-metallic substrates 178
Electronic and optical properties of stacking faults in hexagonal germanium. 176
Interaction of Dopants with the I3-Type Basal Stacking Fault in Hexagonal-Diamond Si 175
Template effect of the nanowire core on the growth of hexagonal Si/Ge shell:a first principles modeling 173
Unraveling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon and Germanium 168
First-principles electronic functionalization of silicene and germanene by adatom chemisorption 168
Electronic properties of hydrogenated silicene and germanene 166
Two-dimensional hexagonal tin: Ab initio geometry, stability, electronic structure and functionalization 165
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 162
An electric field tunable energy band gap at silicene/(0001) ZnS interfaces 161
Interaction of germanene with (0001)ZnSe surfaces: A theoretical study 160
Electronic Properties of Perfect Dislocations in Germanium: A First-Principles Study 156
Structural and vibrational properties of amorphous GeO2from first-principles 155
Theoretical study of Ge dangling bonds in GeO 2 and correlation with ESR results at Ge/GeO 2 interfaces 149
Theoretical study of silicene and germanene 147
Pressure-dependent kinetics of phase transitions in Si and Ge using machine learning interatomic potentials 136
Dopant interactions with I3-basal stacking faults in hexagonal silicon: first-principles insights into fundamental mechanisms. 136
Towards Hexagonal Germanium via Nanoindentation 133
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 131
Nanoindentation-Driven Formation of Textured Hexagonal Silicon Crystals 119
Hexotic and Metastable Phases in Group-IV Semiconductors: From Nanoindentation to Epitaxial Growth and Defect-Induced Magnetism 55
Resolving the metastable Si-XIII structure through convergent theory and experiment 50
Totale 19.104
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Categoria #
all - tutte 60.516
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 60.516
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022727 0 0 0 0 63 93 69 64 65 98 105 170
2022/20231.480 184 403 149 152 82 176 18 77 86 45 57 51
2023/2024979 52 59 27 37 139 216 139 59 84 44 37 86
2024/20252.639 108 312 130 182 217 141 134 107 263 388 241 416
2025/20267.043 515 395 480 580 1.031 382 1.007 324 683 532 468 646
2026/20272.991 292 415 791 1.196 297 0 0 0 0 0 0 0
Totale 19.104