Bicocca Open Archive

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SCALISE, EMILIO
 Distribuzione geografica
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Continente #
NA - Nord America 5.149
AS - Asia 3.213
EU - Europa 3.189
SA - Sud America 465
AF - Africa 83
OC - Oceania 16
Continente sconosciuto - Info sul continente non disponibili 1
Totale 12.116
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Nazione #
US - Stati Uniti d'America 5.038
SG - Singapore 1.313
IT - Italia 958
CN - Cina 776
DE - Germania 624
RU - Federazione Russa 506
HK - Hong Kong 449
BR - Brasile 376
SE - Svezia 278
VN - Vietnam 236
IE - Irlanda 208
FR - Francia 126
GB - Regno Unito 125
JP - Giappone 90
UA - Ucraina 83
IN - India 74
ID - Indonesia 73
CA - Canada 67
ES - Italia 59
FI - Finlandia 54
KR - Corea 51
AR - Argentina 35
MX - Messico 34
BD - Bangladesh 32
ZA - Sudafrica 30
DK - Danimarca 29
PK - Pakistan 24
PL - Polonia 24
BE - Belgio 20
NL - Olanda 20
AT - Austria 19
MA - Marocco 19
IQ - Iraq 16
AU - Australia 14
TW - Taiwan 14
CH - Svizzera 12
CO - Colombia 12
EC - Ecuador 10
TR - Turchia 10
SA - Arabia Saudita 9
VE - Venezuela 9
CL - Cile 7
KE - Kenya 7
DZ - Algeria 6
LT - Lituania 6
NO - Norvegia 6
PY - Paraguay 6
AE - Emirati Arabi Uniti 5
BG - Bulgaria 5
CI - Costa d'Avorio 5
OM - Oman 5
PE - Perù 5
TN - Tunisia 5
GR - Grecia 4
HU - Ungheria 4
PH - Filippine 4
PT - Portogallo 4
AZ - Azerbaigian 3
GE - Georgia 3
IL - Israele 3
SI - Slovenia 3
TH - Thailandia 3
UY - Uruguay 3
UZ - Uzbekistan 3
BH - Bahrain 2
CZ - Repubblica Ceca 2
EG - Egitto 2
ET - Etiopia 2
HN - Honduras 2
IR - Iran 2
JM - Giamaica 2
LK - Sri Lanka 2
MD - Moldavia 2
NG - Nigeria 2
NP - Nepal 2
PS - Palestinian Territory 2
RO - Romania 2
RS - Serbia 2
SC - Seychelles 2
TT - Trinidad e Tobago 2
AL - Albania 1
AM - Armenia 1
AO - Angola 1
BB - Barbados 1
BO - Bolivia 1
BY - Bielorussia 1
BZ - Belize 1
EU - Europa 1
GT - Guatemala 1
GY - Guiana 1
IS - Islanda 1
JO - Giordania 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LB - Libano 1
LV - Lettonia 1
MY - Malesia 1
PA - Panama 1
PW - Palau 1
SN - Senegal 1
Totale 12.113
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Città #
Ann Arbor 1.259
Singapore 708
Frankfurt am Main 481
Hong Kong 440
Ashburn 416
Milan 357
Fairfield 296
Chandler 262
Dublin 193
Wilmington 187
Woodbridge 157
Beijing 138
Dearborn 138
Houston 137
Dallas 134
Seattle 125
New York 123
San Jose 123
Santa Clara 123
Cambridge 116
Los Angeles 110
Hefei 95
Princeton 94
Dong Ket 68
Jakarta 61
Ho Chi Minh City 57
Jacksonville 55
Shanghai 52
Buffalo 51
São Paulo 49
Moscow 42
Seoul 41
Miyamae Ku 40
The Dalles 40
Altamura 39
Chicago 38
Lawrence 38
Monza 38
Nanjing 37
Munich 34
Hanoi 31
San Diego 30
Guangzhou 28
Paris 27
Council Bluffs 24
Rome 22
Lappeenranta 20
Tianjin 20
Brooklyn 18
Shenyang 18
Stockholm 18
Dalmine 17
Denver 17
Hangzhou 17
Johannesburg 17
Umeda 17
Andover 16
Como 16
Montreal 16
Toronto 16
Vigano San Martino 16
Helsinki 15
Nuremberg 15
Boston 14
Brescia 14
Turin 14
Warsaw 14
Chennai 13
Jinan 13
Querétaro 13
Hebei 12
Kent 12
London 12
Naples 12
Sacramento 12
Tokyo 12
Berlin 11
Desio 11
Haiphong 11
Phoenix 11
Poplar 11
Pune 11
Basingstoke 10
Boardman 10
Casandrino 10
Dhaka 10
Manchester 10
Parma 10
Ribeirão Preto 10
Salt Lake City 10
Taipei 10
Turku 10
Zhengzhou 10
Bergamo 9
Changsha 9
Fremont 9
Spirano 9
Valladolid 9
Atlanta 8
Cinisello Balsamo 8
Totale 7.847
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Nome #
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 404
Stability and universal encapsulation of epitaxial Xenes 399
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 396
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 315
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 306
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 289
Tailoring the electronic properties of semiconducting nanocrystal-solids 282
Exciton-driven change of phonon modes causes strong temperature dependent bandgap shift in nanoclusters 274
Hexagonal Diamond phase of Si and Ge by nanoindentation 267
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 263
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 250
Surface chemistry and buried interfaces in all-inorganic nanocrystalline solids 243
Getting through the Nature of Silicene: An sp(2)-sp(3) Two-Dimensional Silicon Nanosheet 240
Two-dimensional Si nanosheets with local hexagonal structure on a MoS 2 surface 240
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 236
Hexagonal Si and Ge polytypes for silicon photonics 216
Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates 205
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 204
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 201
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 200
Morphological evolution and compositional segregation effects in core-shell nanowires 191
Vibrational Properties of Defective Oxides and 2D Nanolattices 190
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation 189
Structural and chemical stabilization of the epitaxial silicene 188
Vibrational properties of epitaxial silicene layers on (111) Ag 184
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 184
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale 182
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 181
Theoretical aspects of graphene-like group IV semiconductors 180
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 179
Silicene on non-metallic substrates: Recent theoretical and experimental advances 173
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 172
Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate 169
Atomic scale insights into Sn on Ge(100): From submonolayers to the formation of Sn wetting layers 169
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 167
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation 161
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 160
Indirect Exciton–Phonon Dynamics in MoS2 Revealed by Ultrafast Electron Diffraction 156
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 152
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 151
Synthesis of silicene on alternative substrates 148
New approaches and understandings in the growth of cubic silicon carbide 148
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained 143
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 142
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 142
Predicting 2D silicon allotropes on SnS2 142
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 140
Inelastic electron tunneling spectroscopy of HfO 2 gate stacks: A study based on first-principles modeling 138
Theoretical study of transition metal dichalcogenides 136
First-principles electronic functionalization of silicene and germanene by adatom chemisorption 131
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure 130
Interaction of silicene and germanene with non-metallic substrates 130
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 130
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation 127
First-principles study of strained 2D MoS2 125
Interaction of silicene and germanene with non-metallic substrates 124
Unveiling Planar Defects in Hexagonal Group IV Materials 123
Interaction of germanene with (0001)ZnSe surfaces: A theoretical study 122
Structural and vibrational properties of amorphous GeO2from first-principles 113
Theoretical study of Ge dangling bonds in GeO 2 and correlation with ESR results at Ge/GeO 2 interfaces 111
Electronic properties of hydrogenated silicene and germanene 109
An electric field tunable energy band gap at silicene/(0001) ZnS interfaces 109
Template effect of the nanowire core on the growth of hexagonal Si/Ge shell:a first principles modeling 107
Two-dimensional hexagonal tin: Ab initio geometry, stability, electronic structure and functionalization 105
Theoretical study of silicene and germanene 97
TEM analysis of Textured Silicon Polymorph Crystals obtained via Nanoindentation and Annealing 72
Electronic Properties of Perfect Dislocations in Germanium: A First-Principles Study 69
Interaction of Dopants with the I3-Type Basal Stacking Fault in Hexagonal-Diamond Si 58
Origin and Evolution of I3 defects in Hexagonal Silicon and Germanium 53
Planar Hexagonal Germanium Grown on Cadmium Sulfide Substrate by Low-Energy Plasma-Enhanced Chemical Vapor Deposition. 48
Unraveling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon and Germanium 45
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 44
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 43
Towards Hexagonal Germanium via Nanoindentation 42
Pressure-dependent kinetics of phase transitions in Si and Ge using machine learning interatomic potentials 36
Electronic and optical properties of stacking faults in hexagonal germanium. 35
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 32
Dopant interactions with I3-basal stacking faults in hexagonal silicon: first-principles insights into fundamental mechanisms. 27
Totale 12.684
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Categoria #
all - tutte 43.953
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 43.953
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021716 0 0 0 0 0 0 71 147 92 121 90 195
2021/20221.172 107 85 154 99 63 93 69 64 65 98 105 170
2022/20231.480 184 403 149 152 82 176 18 77 86 45 57 51
2023/2024979 52 59 27 37 139 216 139 59 84 44 37 86
2024/20252.639 108 312 130 182 217 141 134 107 263 388 241 416
2025/20263.614 515 395 480 580 1.031 382 231 0 0 0 0 0
Totale 12.684