SCALISE, EMILIO
 Distribuzione geografica
Continente #
NA - Nord America 4.007
EU - Europa 2.543
AS - Asia 1.255
SA - Sud America 52
AF - Africa 27
OC - Oceania 4
Continente sconosciuto - Info sul continente non disponibili 1
Totale 7.889
Nazione #
US - Stati Uniti d'America 3.962
IT - Italia 741
DE - Germania 559
SG - Singapore 466
RU - Federazione Russa 409
CN - Cina 312
SE - Svezia 260
IE - Irlanda 199
HK - Hong Kong 190
VN - Vietnam 82
GB - Regno Unito 70
JP - Giappone 68
UA - Ucraina 68
ID - Indonesia 59
FR - Francia 57
BR - Brasile 44
ES - Italia 39
CA - Canada 38
DK - Danimarca 26
FI - Finlandia 23
IN - India 21
AT - Austria 17
BE - Belgio 16
NL - Olanda 15
MA - Marocco 13
CH - Svizzera 10
PK - Pakistan 10
TW - Taiwan 9
BD - Bangladesh 8
KR - Corea 7
PL - Polonia 7
MX - Messico 6
NO - Norvegia 6
ZA - Sudafrica 6
BG - Bulgaria 5
AU - Australia 4
CI - Costa d'Avorio 4
GR - Grecia 4
PH - Filippine 4
AR - Argentina 3
SI - Slovenia 3
TR - Turchia 3
CZ - Repubblica Ceca 2
EC - Ecuador 2
GE - Georgia 2
IR - Iran 2
LK - Sri Lanka 2
NG - Nigeria 2
SA - Arabia Saudita 2
SC - Seychelles 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
AZ - Azerbaigian 1
CL - Cile 1
EU - Europa 1
HU - Ungheria 1
IL - Israele 1
IQ - Iraq 1
IS - Islanda 1
LV - Lettonia 1
MD - Moldavia 1
OM - Oman 1
PA - Panama 1
PT - Portogallo 1
PY - Paraguay 1
RO - Romania 1
RS - Serbia 1
TH - Thailandia 1
UZ - Uzbekistan 1
VE - Venezuela 1
Totale 7.889
Città #
Ann Arbor 1.258
Frankfurt am Main 470
Singapore 324
Fairfield 296
Milan 282
Chandler 262
Ashburn 194
Dublin 191
Wilmington 186
Hong Kong 182
Woodbridge 157
Dearborn 138
Houston 133
Seattle 123
Cambridge 114
Santa Clara 112
New York 99
Princeton 94
Dong Ket 68
Jakarta 57
Jacksonville 53
Shanghai 48
Miyamae Ku 40
Altamura 39
Lawrence 38
Nanjing 37
Los Angeles 30
San Diego 30
Monza 29
Guangzhou 25
Beijing 22
Moscow 22
Chicago 20
Council Bluffs 18
Paris 17
Shenyang 17
Umeda 17
Andover 16
Como 16
Vigano San Martino 16
Dalmine 15
Hangzhou 15
Turin 14
Toronto 13
Hebei 12
Jinan 12
Nuremberg 12
Tianjin 12
Sacramento 11
Brescia 10
Dallas 9
Fremont 9
Helsinki 9
Lappeenranta 9
Munich 9
Parma 9
Pune 9
Spirano 9
Valladolid 9
Cinisello Balsamo 8
Jiaxing 8
Kunming 8
London 8
Norwalk 8
Zhengzhou 8
Berlin 7
Nanchang 7
Ningbo 7
São Paulo 7
Ardea 6
Boardman 6
Brussels 6
Cagliari 6
Chittagong 6
Colle 6
College Station 6
Edmonton 6
Fornovo San Giovanni 6
Kitchener 6
Rome 6
Calusco d'Adda 5
Casablanca 5
Cesano Maderno 5
Changsha 5
Chiavenna 5
Chiyoda-ku 5
Desio 5
Grafing 5
Karachi 5
Kiev 5
Leipzig 5
Leuven 5
Lovere 5
Madrid 5
Portsmouth 5
Salt Lake City 5
Taipei 5
Verdello 5
Abidjan 4
Amsterdam 4
Totale 5.737
Nome #
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 344
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 318
Stability and universal encapsulation of epitaxial Xenes 313
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 254
Tailoring the electronic properties of semiconducting nanocrystal-solids 242
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 242
Exciton-driven change of phonon modes causes strong temperature dependent bandgap shift in nanoclusters 238
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 232
Surface chemistry and buried interfaces in all-inorganic nanocrystalline solids 198
Getting through the Nature of Silicene: An sp(2)-sp(3) Two-Dimensional Silicon Nanosheet 192
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 188
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 188
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 165
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 162
Vibrational properties of epitaxial silicene layers on (111) Ag 161
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 161
Hexagonal Diamond phase of Si and Ge by nanoindentation 156
Two-dimensional Si nanosheets with local hexagonal structure on a MoS 2 surface 153
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale 153
Theoretical aspects of graphene-like group IV semiconductors 150
Vibrational Properties of Defective Oxides and 2D Nanolattices 150
Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates 149
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 149
Morphological evolution and compositional segregation effects in core-shell nanowires 141
Silicene on non-metallic substrates: Recent theoretical and experimental advances 139
Hexagonal Si and Ge polytypes for silicon photonics 132
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 130
Atomic scale insights into Sn on Ge(100): From submonolayers to the formation of Sn wetting layers 129
Structural and chemical stabilization of the epitaxial silicene 127
Predicting 2D silicon allotropes on SnS2 126
Inelastic electron tunneling spectroscopy of HfO 2 gate stacks: A study based on first-principles modeling 116
Interaction of silicene and germanene with non-metallic substrates 114
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 114
New approaches and understandings in the growth of cubic silicon carbide 113
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS 2 110
Theoretical study of transition metal dichalcogenides 110
Synthesis of silicene on alternative substrates 105
First-principles electronic functionalization of silicene and germanene by adatom chemisorption 105
Interaction of germanene with (0001)ZnSe surfaces: A theoretical study 103
Interaction of silicene and germanene with non-metallic substrates 96
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 96
First-principles study of strained 2D MoS2 95
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 94
Indirect Exciton–Phonon Dynamics in MoS2 Revealed by Ultrafast Electron Diffraction 92
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 91
Unveiling Planar Defects in Hexagonal Group IV Materials 91
Theoretical study of Ge dangling bonds in GeO 2 and correlation with ESR results at Ge/GeO 2 interfaces 87
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 86
Structural and vibrational properties of amorphous GeO2from first-principles 85
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 81
Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate 78
Electronic properties of hydrogenated silicene and germanene 78
Two-dimensional hexagonal tin: Ab initio geometry, stability, electronic structure and functionalization 77
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation 76
Theoretical study of silicene and germanene 73
Template effect of the nanowire core on the growth of hexagonal Si/Ge shell:a first principles modeling 73
An electric field tunable energy band gap at silicene/(0001) ZnS interfaces 70
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 63
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 49
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation 47
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 45
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation 38
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained 32
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure 32
Totale 8.397
Categoria #
all - tutte 32.144
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 32.144


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020159 0 0 0 0 0 0 0 0 0 72 65 22
2020/20211.168 23 49 100 87 91 102 71 147 92 121 90 195
2021/20221.172 107 85 154 99 63 93 69 64 65 98 105 170
2022/20231.480 184 403 149 152 82 176 18 77 86 45 57 51
2023/2024979 52 59 27 37 139 216 139 59 84 44 37 86
2024/20251.966 108 312 130 182 217 141 134 107 263 372 0 0
Totale 8.397