Bicocca Open Archive

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SCALISE, EMILIO
 Distribuzione geografica
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Continente #
NA - Nord America 7.293
AS - Asia 4.343
EU - Europa 4.022
SA - Sud America 608
Continente sconosciuto - Info sul continente non disponibili 576
AF - Africa 133
OC - Oceania 22
Totale 16.997
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Nazione #
US - Stati Uniti d'America 6.886
SG - Singapore 1.572
IT - Italia 1.466
CN - Cina 890
DE - Germania 653
VN - Vietnam 559
RU - Federazione Russa 513
HK - Hong Kong 480
BR - Brasile 453
CA - Canada 318
SE - Svezia 286
FR - Francia 239
IE - Irlanda 211
GB - Regno Unito 147
IN - India 137
BD - Bangladesh 115
JP - Giappone 106
UA - Ucraina 91
KR - Corea 87
ID - Indonesia 84
ES - Italia 78
FI - Finlandia 73
AR - Argentina 57
IQ - Iraq 48
NL - Olanda 48
MX - Messico 45
PK - Pakistan 41
ZA - Sudafrica 41
TR - Turchia 37
CH - Svizzera 36
DK - Danimarca 29
PL - Polonia 29
MA - Marocco 26
BE - Belgio 25
CO - Colombia 24
SA - Arabia Saudita 24
TW - Taiwan 24
PH - Filippine 23
AT - Austria 22
AU - Australia 20
EC - Ecuador 19
CL - Cile 17
UZ - Uzbekistan 15
MY - Malesia 14
KE - Kenya 13
VE - Venezuela 13
JM - Giamaica 12
HU - Ungheria 11
TH - Thailandia 11
GR - Grecia 10
AE - Emirati Arabi Uniti 9
AZ - Azerbaigian 9
DZ - Algeria 9
TN - Tunisia 9
ET - Etiopia 8
JO - Giordania 8
NO - Norvegia 8
PY - Paraguay 8
HN - Honduras 7
NP - Nepal 7
OM - Oman 7
TT - Trinidad e Tobago 7
CI - Costa d'Avorio 6
CR - Costa Rica 6
LT - Lituania 6
PS - Palestinian Territory 6
PT - Portogallo 6
RS - Serbia 6
SI - Slovenia 6
UY - Uruguay 6
BG - Bulgaria 5
PE - Perù 5
SC - Seychelles 5
GE - Georgia 4
IL - Israele 4
KZ - Kazakistan 4
LB - Libano 4
SN - Senegal 4
AL - Albania 3
BH - Bahrain 3
BO - Bolivia 3
BY - Bielorussia 3
CZ - Repubblica Ceca 3
GY - Guiana 3
LY - Libia 3
AM - Armenia 2
AO - Angola 2
BB - Barbados 2
EG - Egitto 2
GT - Guatemala 2
HR - Croazia 2
IR - Iran 2
LK - Sri Lanka 2
MD - Moldavia 2
NG - Nigeria 2
PA - Panama 2
PR - Porto Rico 2
RO - Romania 2
SY - Repubblica araba siriana 2
BN - Brunei Darussalam 1
Totale 16.407
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Città #
Ann Arbor 1.260
Singapore 874
San Jose 639
Ashburn 544
Milan 527
Frankfurt am Main 494
Hong Kong 462
Fairfield 296
Chandler 262
Toronto 233
Dublin 195
Wilmington 188
New York 168
Council Bluffs 167
Los Angeles 162
Woodbridge 157
Santa Clara 156
Ho Chi Minh City 153
Dallas 150
Beijing 148
Houston 143
Dearborn 138
Seattle 134
Chicago 123
Cambridge 118
Hanoi 114
Princeton 96
Hefei 95
The Dalles 95
Seoul 73
Rome 70
Columbus 68
Dong Ket 68
Buffalo 66
Lauterbourg 66
Jakarta 64
São Paulo 59
Jacksonville 58
Shanghai 58
Moscow 43
Miyamae Ku 40
Monza 40
Altamura 39
Lawrence 38
Nanjing 37
San Diego 35
Munich 34
Sesto San Giovanni 31
Paris 30
Guangzhou 29
Montreal 29
Turin 29
Atlanta 27
Helsinki 27
Brooklyn 26
Haiphong 26
Naples 26
Zurich 22
Da Nang 21
Johannesburg 21
Phoenix 21
Tokyo 21
Denver 20
Lappeenranta 20
Tianjin 20
Boardman 19
Chennai 19
Stockholm 19
London 18
Orem 18
Shenyang 18
Warsaw 18
Brescia 17
Dalmine 17
Hangzhou 17
Umeda 17
Andover 16
Boston 16
Como 16
Nuremberg 16
Sacramento 16
Vigano San Martino 16
Baghdad 15
Newark 15
Tashkent 15
Dhaka 14
Philadelphia 14
Jinan 13
Pune 13
Querétaro 13
Washington 13
Berlin 12
Figino 12
Hebei 12
Kent 12
Manchester 12
Nairobi 12
Basingstoke 11
Changsha 11
Desio 11
Totale 10.216
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Nome #
Stability and universal encapsulation of epitaxial Xenes 462
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 456
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 441
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 381
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 369
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 360
Tailoring the electronic properties of semiconducting nanocrystal-solids 320
Hexagonal Diamond phase of Si and Ge by nanoindentation 316
Two-dimensional Si nanosheets with local hexagonal structure on a MoS 2 surface 302
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 300
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 297
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 297
Exciton-driven change of phonon modes causes strong temperature dependent bandgap shift in nanoclusters 296
Getting through the Nature of Silicene: An sp(2)-sp(3) Two-Dimensional Silicon Nanosheet 294
Surface chemistry and buried interfaces in all-inorganic nanocrystalline solids 279
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 277
Hexagonal Si and Ge polytypes for silicon photonics 273
Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates 264
Structural and chemical stabilization of the epitaxial silicene 256
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 247
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 246
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained 244
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 243
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation 238
Morphological evolution and compositional segregation effects in core-shell nanowires 238
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 235
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 234
Vibrational Properties of Defective Oxides and 2D Nanolattices 234
Indirect Exciton–Phonon Dynamics in MoS2 Revealed by Ultrafast Electron Diffraction 234
Planar Hexagonal Germanium Grown on Cadmium Sulfide Substrate by Low-Energy Plasma-Enhanced Chemical Vapor Deposition. 233
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 232
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 227
Theoretical aspects of graphene-like group IV semiconductors 218
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 218
Vibrational properties of epitaxial silicene layers on (111) Ag 216
Silicene on non-metallic substrates: Recent theoretical and experimental advances 215
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation 213
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale 213
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 212
Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate 209
Atomic scale insights into Sn on Ge(100): From submonolayers to the formation of Sn wetting layers 208
New approaches and understandings in the growth of cubic silicon carbide 204
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 202
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 185
TEM analysis of Textured Silicon Polymorph Crystals obtained via Nanoindentation and Annealing 183
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure 174
Predicting 2D silicon allotropes on SnS2 174
Origin and Evolution of I3 defects in Hexagonal Silicon and Germanium 172
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation 172
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 171
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 169
Inelastic electron tunneling spectroscopy of HfO 2 gate stacks: A study based on first-principles modeling 169
Synthesis of silicene on alternative substrates 165
First-principles study of strained 2D MoS2 163
Theoretical study of transition metal dichalcogenides 163
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 163
Unveiling Planar Defects in Hexagonal Group IV Materials 162
Interaction of silicene and germanene with non-metallic substrates 161
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 153
Interaction of silicene and germanene with non-metallic substrates 153
First-principles electronic functionalization of silicene and germanene by adatom chemisorption 151
Interaction of germanene with (0001)ZnSe surfaces: A theoretical study 148
Two-dimensional hexagonal tin: Ab initio geometry, stability, electronic structure and functionalization 147
Template effect of the nanowire core on the growth of hexagonal Si/Ge shell:a first principles modeling 147
Electronic and optical properties of stacking faults in hexagonal germanium. 143
Interaction of Dopants with the I3-Type Basal Stacking Fault in Hexagonal-Diamond Si 142
Electronic properties of hydrogenated silicene and germanene 142
Structural and vibrational properties of amorphous GeO2from first-principles 136
An electric field tunable energy band gap at silicene/(0001) ZnS interfaces 136
Unraveling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon and Germanium 135
Electronic Properties of Perfect Dislocations in Germanium: A First-Principles Study 133
Theoretical study of Ge dangling bonds in GeO 2 and correlation with ESR results at Ge/GeO 2 interfaces 133
Theoretical study of silicene and germanene 127
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 121
Dopant interactions with I3-basal stacking faults in hexagonal silicon: first-principles insights into fundamental mechanisms. 112
Pressure-dependent kinetics of phase transitions in Si and Ge using machine learning interatomic potentials 110
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 109
Towards Hexagonal Germanium via Nanoindentation 107
Nanoindentation-Driven Formation of Textured Hexagonal Silicon Crystals 88
Hexotic and Metastable Phases in Group-IV Semiconductors: From Nanoindentation to Epitaxial Growth and Defect-Induced Magnetism 25
Totale 16.997
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Categoria #
all - tutte 55.815
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 55.815
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022980 0 0 154 99 63 93 69 64 65 98 105 170
2022/20231.480 184 403 149 152 82 176 18 77 86 45 57 51
2023/2024979 52 59 27 37 139 216 139 59 84 44 37 86
2024/20252.639 108 312 130 182 217 141 134 107 263 388 241 416
2025/20267.043 515 395 480 580 1.031 382 1.007 324 683 532 468 646
2026/2027884 292 415 177 0 0 0 0 0 0 0 0 0
Totale 16.997