Bicocca Open Archive

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SCALISE, EMILIO
 Distribuzione geografica
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Continente #
NA - Nord America 8.133
AS - Asia 4.347
EU - Europa 4.094
SA - Sud America 613
Continente sconosciuto - Info sul continente non disponibili 579
AF - Africa 133
OC - Oceania 22
Totale 17.921
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Nazione #
US - Stati Uniti d'America 7.708
SG - Singapore 1.572
IT - Italia 1.515
CN - Cina 890
DE - Germania 654
VN - Vietnam 559
RU - Federazione Russa 513
HK - Hong Kong 480
BR - Brasile 456
CA - Canada 326
SE - Svezia 286
FR - Francia 244
IE - Irlanda 211
GB - Regno Unito 156
IN - India 138
BD - Bangladesh 116
JP - Giappone 106
UA - Ucraina 91
KR - Corea 87
ID - Indonesia 85
ES - Italia 78
FI - Finlandia 73
AR - Argentina 57
NL - Olanda 55
IQ - Iraq 48
MX - Messico 47
PK - Pakistan 41
ZA - Sudafrica 41
TR - Turchia 37
CH - Svizzera 36
DK - Danimarca 29
PL - Polonia 29
MA - Marocco 26
BE - Belgio 25
CO - Colombia 24
SA - Arabia Saudita 24
TW - Taiwan 24
AT - Austria 23
PH - Filippine 23
AU - Australia 20
EC - Ecuador 20
CL - Cile 18
JM - Giamaica 15
UZ - Uzbekistan 15
MY - Malesia 14
KE - Kenya 13
VE - Venezuela 13
HU - Ungheria 11
TH - Thailandia 11
GR - Grecia 10
AE - Emirati Arabi Uniti 9
AZ - Azerbaigian 9
DZ - Algeria 9
TN - Tunisia 9
TT - Trinidad e Tobago 9
ET - Etiopia 8
HN - Honduras 8
JO - Giordania 8
NO - Norvegia 8
NP - Nepal 8
PY - Paraguay 8
CR - Costa Rica 7
OM - Oman 7
CI - Costa d'Avorio 6
LT - Lituania 6
PS - Palestinian Territory 6
PT - Portogallo 6
RS - Serbia 6
SI - Slovenia 6
UY - Uruguay 6
BG - Bulgaria 5
PE - Perù 5
SC - Seychelles 5
GE - Georgia 4
IL - Israele 4
KZ - Kazakistan 4
LB - Libano 4
SN - Senegal 4
AL - Albania 3
BH - Bahrain 3
BO - Bolivia 3
BY - Bielorussia 3
CZ - Repubblica Ceca 3
GT - Guatemala 3
GY - Guiana 3
LY - Libia 3
AM - Armenia 2
AO - Angola 2
BB - Barbados 2
EG - Egitto 2
HR - Croazia 2
IR - Iran 2
LK - Sri Lanka 2
MD - Moldavia 2
NG - Nigeria 2
PA - Panama 2
PR - Porto Rico 2
RO - Romania 2
SY - Repubblica araba siriana 2
BN - Brunei Darussalam 1
Totale 17.328
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Città #
Ann Arbor 1.260
Singapore 874
San Jose 726
Ashburn 718
Milan 544
Frankfurt am Main 494
Hong Kong 462
Fairfield 296
Chandler 262
Toronto 235
Dublin 195
Wilmington 188
New York 175
Council Bluffs 174
Los Angeles 167
Santa Clara 162
Woodbridge 157
Dallas 153
Ho Chi Minh City 153
Beijing 148
Houston 144
Dearborn 139
Seattle 136
Chicago 128
Cambridge 118
Hanoi 114
The Dalles 98
Princeton 96
Hefei 95
Seoul 73
Rome 71
Columbus 70
Buffalo 68
Dong Ket 68
Lauterbourg 66
Jakarta 64
São Paulo 61
Jacksonville 59
Shanghai 58
Moscow 43
Miyamae Ku 40
Monza 40
Altamura 39
Lawrence 38
Nanjing 37
San Diego 35
Atlanta 34
Munich 34
Turin 33
Sesto San Giovanni 31
Montreal 30
Paris 30
Phoenix 30
Guangzhou 29
Brooklyn 27
Helsinki 27
Haiphong 26
Naples 26
Denver 22
Philadelphia 22
Zurich 22
Da Nang 21
Johannesburg 21
Newark 21
Tokyo 21
Washington 21
Lappeenranta 20
Tianjin 20
Boardman 19
Chennai 19
Stockholm 19
London 18
Orem 18
Shenyang 18
Warsaw 18
Brescia 17
Dalmine 17
Hangzhou 17
Umeda 17
Andover 16
Boston 16
Como 16
Nuremberg 16
Sacramento 16
Vigano San Martino 16
Baghdad 15
Tashkent 15
Dhaka 14
Figino 14
Jinan 13
Pune 13
Querétaro 13
Amsterdam 12
Berlin 12
Hebei 12
Kent 12
Manchester 12
Mexico City 12
Miami 12
Nairobi 12
Totale 10.595
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Nome #
Stability and universal encapsulation of epitaxial Xenes 478
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 465
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 450
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 397
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 380
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 371
Hexagonal Diamond phase of Si and Ge by nanoindentation 330
Tailoring the electronic properties of semiconducting nanocrystal-solids 329
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 313
Two-dimensional Si nanosheets with local hexagonal structure on a MoS 2 surface 311
Exciton-driven change of phonon modes causes strong temperature dependent bandgap shift in nanoclusters 311
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 306
Getting through the Nature of Silicene: An sp(2)-sp(3) Two-Dimensional Silicon Nanosheet 305
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 305
Surface chemistry and buried interfaces in all-inorganic nanocrystalline solids 294
Hexagonal Si and Ge polytypes for silicon photonics 286
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 286
Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates 275
Indirect Exciton–Phonon Dynamics in MoS2 Revealed by Ultrafast Electron Diffraction 265
Structural and chemical stabilization of the epitaxial silicene 264
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained 262
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 259
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation 256
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 255
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 254
Vibrational Properties of Defective Oxides and 2D Nanolattices 252
Morphological evolution and compositional segregation effects in core-shell nanowires 252
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 247
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 246
Planar Hexagonal Germanium Grown on Cadmium Sulfide Substrate by Low-Energy Plasma-Enhanced Chemical Vapor Deposition. 246
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 243
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 240
Theoretical aspects of graphene-like group IV semiconductors 228
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 228
Silicene on non-metallic substrates: Recent theoretical and experimental advances 226
Vibrational properties of epitaxial silicene layers on (111) Ag 225
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation 221
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 220
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale 219
Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate 217
Atomic scale insights into Sn on Ge(100): From submonolayers to the formation of Sn wetting layers 213
New approaches and understandings in the growth of cubic silicon carbide 213
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 206
TEM analysis of Textured Silicon Polymorph Crystals obtained via Nanoindentation and Annealing 194
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 191
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure 189
Predicting 2D silicon allotropes on SnS2 186
Origin and Evolution of I3 defects in Hexagonal Silicon and Germanium 185
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation 182
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 179
Inelastic electron tunneling spectroscopy of HfO 2 gate stacks: A study based on first-principles modeling 178
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 177
First-principles study of strained 2D MoS2 174
Synthesis of silicene on alternative substrates 174
Theoretical study of transition metal dichalcogenides 173
Unveiling Planar Defects in Hexagonal Group IV Materials 173
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 173
Interaction of silicene and germanene with non-metallic substrates 170
Interaction of silicene and germanene with non-metallic substrates 169
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 165
Template effect of the nanowire core on the growth of hexagonal Si/Ge shell:a first principles modeling 162
First-principles electronic functionalization of silicene and germanene by adatom chemisorption 160
Interaction of Dopants with the I3-Type Basal Stacking Fault in Hexagonal-Diamond Si 157
Electronic properties of hydrogenated silicene and germanene 156
Electronic and optical properties of stacking faults in hexagonal germanium. 155
Two-dimensional hexagonal tin: Ab initio geometry, stability, electronic structure and functionalization 155
Interaction of germanene with (0001)ZnSe surfaces: A theoretical study 153
An electric field tunable energy band gap at silicene/(0001) ZnS interfaces 149
Structural and vibrational properties of amorphous GeO2from first-principles 147
Unraveling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon and Germanium 146
Electronic Properties of Perfect Dislocations in Germanium: A First-Principles Study 143
Theoretical study of Ge dangling bonds in GeO 2 and correlation with ESR results at Ge/GeO 2 interfaces 142
Theoretical study of silicene and germanene 138
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 134
Pressure-dependent kinetics of phase transitions in Si and Ge using machine learning interatomic potentials 121
Dopant interactions with I3-basal stacking faults in hexagonal silicon: first-principles insights into fundamental mechanisms. 119
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 114
Towards Hexagonal Germanium via Nanoindentation 112
Nanoindentation-Driven Formation of Textured Hexagonal Silicon Crystals 98
Hexotic and Metastable Phases in Group-IV Semiconductors: From Nanoindentation to Epitaxial Growth and Defect-Induced Magnetism 47
Resolving the metastable Si-XIII structure through convergent theory and experiment 32
Totale 17.921
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Categoria #
all - tutte 57.899
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 57.899
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022826 0 0 0 99 63 93 69 64 65 98 105 170
2022/20231.480 184 403 149 152 82 176 18 77 86 45 57 51
2023/2024979 52 59 27 37 139 216 139 59 84 44 37 86
2024/20252.639 108 312 130 182 217 141 134 107 263 388 241 416
2025/20267.043 515 395 480 580 1.031 382 1.007 324 683 532 468 646
2026/20271.808 292 415 791 310 0 0 0 0 0 0 0 0
Totale 17.921