Bicocca Open Archive

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 Distribuzione geografica
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Continente #
NA - Nord America 6.313
AS - Asia 4.251
EU - Europa 3.675
SA - Sud America 596
AF - Africa 132
OC - Oceania 22
Continente sconosciuto - Info sul continente non disponibili 1
Totale 14.990
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Nazione #
US - Stati Uniti d'America 5.961
SG - Singapore 1.567
IT - Italia 1.166
CN - Cina 870
DE - Germania 651
VN - Vietnam 556
RU - Federazione Russa 513
HK - Hong Kong 476
BR - Brasile 449
CA - Canada 294
SE - Svezia 279
FR - Francia 220
IE - Irlanda 210
GB - Regno Unito 146
IN - India 134
JP - Giappone 103
UA - Ucraina 91
KR - Corea 87
ID - Indonesia 83
BD - Bangladesh 78
ES - Italia 78
FI - Finlandia 68
AR - Argentina 56
IQ - Iraq 47
NL - Olanda 44
MX - Messico 41
PK - Pakistan 41
ZA - Sudafrica 41
CH - Svizzera 36
TR - Turchia 34
DK - Danimarca 29
PL - Polonia 29
MA - Marocco 25
BE - Belgio 24
SA - Arabia Saudita 24
PH - Filippine 22
CO - Colombia 21
AU - Australia 20
AT - Austria 19
TW - Taiwan 19
CL - Cile 17
EC - Ecuador 16
UZ - Uzbekistan 15
KE - Kenya 13
MY - Malesia 12
VE - Venezuela 12
GR - Grecia 10
AE - Emirati Arabi Uniti 9
AZ - Azerbaigian 9
DZ - Algeria 9
HU - Ungheria 9
TH - Thailandia 9
TN - Tunisia 9
ET - Etiopia 8
JO - Giordania 8
NO - Norvegia 8
PY - Paraguay 8
OM - Oman 7
CI - Costa d'Avorio 6
LT - Lituania 6
NP - Nepal 6
PS - Palestinian Territory 6
PT - Portogallo 6
RS - Serbia 6
SI - Slovenia 6
UY - Uruguay 6
BG - Bulgaria 5
PE - Perù 5
SC - Seychelles 5
GE - Georgia 4
IL - Israele 4
LB - Libano 4
SN - Senegal 4
BH - Bahrain 3
BO - Bolivia 3
BY - Bielorussia 3
CZ - Repubblica Ceca 3
GY - Guiana 3
HN - Honduras 3
JM - Giamaica 3
KZ - Kazakistan 3
LY - Libia 3
AM - Armenia 2
AO - Angola 2
CR - Costa Rica 2
EG - Egitto 2
HR - Croazia 2
IR - Iran 2
LK - Sri Lanka 2
MD - Moldavia 2
NG - Nigeria 2
PA - Panama 2
RO - Romania 2
SY - Repubblica araba siriana 2
TT - Trinidad e Tobago 2
AL - Albania 1
BB - Barbados 1
BN - Brunei Darussalam 1
BZ - Belize 1
EE - Estonia 1
Totale 14.977
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Città #
Ann Arbor 1.260
Singapore 873
San Jose 501
Frankfurt am Main 494
Ashburn 481
Hong Kong 459
Milan 389
Fairfield 296
Chandler 262
Toronto 230
Dublin 195
Wilmington 187
Woodbridge 157
New York 156
Ho Chi Minh City 153
Beijing 146
Los Angeles 143
Dallas 141
Houston 140
Dearborn 138
Santa Clara 130
Seattle 126
Cambridge 118
Chicago 117
Hanoi 114
Hefei 95
Princeton 94
The Dalles 83
Seoul 73
Dong Ket 68
Lauterbourg 66
Jakarta 64
São Paulo 59
Jacksonville 57
Shanghai 57
Buffalo 56
Council Bluffs 56
Moscow 43
Miyamae Ku 40
Altamura 39
Monza 39
Lawrence 38
Nanjing 37
Munich 34
San Diego 33
Paris 30
Rome 30
Guangzhou 29
Haiphong 26
Helsinki 25
Montreal 24
Atlanta 22
Sesto San Giovanni 22
Zurich 22
Da Nang 21
Johannesburg 21
Tokyo 21
Lappeenranta 20
Tianjin 20
Turin 20
Brooklyn 19
Denver 19
Naples 19
Stockholm 19
Chennai 18
London 18
Shenyang 18
Warsaw 18
Dalmine 17
Hangzhou 17
Orem 17
Umeda 17
Andover 16
Boston 16
Como 16
Nuremberg 16
Vigano San Martino 16
Baghdad 15
Brescia 15
Tashkent 15
Dhaka 14
Newark 14
Boardman 13
Jinan 13
Phoenix 13
Pune 13
Querétaro 13
Sacramento 13
Berlin 12
Hebei 12
Kent 12
Manchester 12
Nairobi 12
Philadelphia 12
Basingstoke 11
Desio 11
Lahore 11
Poplar 11
Ribeirão Preto 11
Amsterdam 10
Totale 9.474
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Nome #
Stability and universal encapsulation of epitaxial Xenes 448
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 442
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 427
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 355
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 346
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 343
Tailoring the electronic properties of semiconducting nanocrystal-solids 310
Hexagonal Diamond phase of Si and Ge by nanoindentation 299
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 292
Exciton-driven change of phonon modes causes strong temperature dependent bandgap shift in nanoclusters 290
Two-dimensional Si nanosheets with local hexagonal structure on a MoS 2 surface 286
Getting through the Nature of Silicene: An sp(2)-sp(3) Two-Dimensional Silicon Nanosheet 283
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 283
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 270
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 269
Surface chemistry and buried interfaces in all-inorganic nanocrystalline solids 263
Hexagonal Si and Ge polytypes for silicon photonics 255
Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates 249
Structural and chemical stabilization of the epitaxial silicene 238
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 237
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 237
Morphological evolution and compositional segregation effects in core-shell nanowires 225
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation 219
Vibrational Properties of Defective Oxides and 2D Nanolattices 218
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 216
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 215
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 213
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 211
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 210
Vibrational properties of epitaxial silicene layers on (111) Ag 210
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 208
Silicene on non-metallic substrates: Recent theoretical and experimental advances 206
Indirect Exciton–Phonon Dynamics in MoS2 Revealed by Ultrafast Electron Diffraction 205
Theoretical aspects of graphene-like group IV semiconductors 204
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale 203
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained 201
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation 199
Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate 198
Atomic scale insights into Sn on Ge(100): From submonolayers to the formation of Sn wetting layers 198
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 197
New approaches and understandings in the growth of cubic silicon carbide 189
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 188
Planar Hexagonal Germanium Grown on Cadmium Sulfide Substrate by Low-Energy Plasma-Enhanced Chemical Vapor Deposition. 173
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 172
Predicting 2D silicon allotropes on SnS2 169
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 164
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 162
Synthesis of silicene on alternative substrates 160
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation 159
Theoretical study of transition metal dichalcogenides 158
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure 157
Inelastic electron tunneling spectroscopy of HfO 2 gate stacks: A study based on first-principles modeling 157
Interaction of silicene and germanene with non-metallic substrates 151
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 151
First-principles study of strained 2D MoS2 150
Unveiling Planar Defects in Hexagonal Group IV Materials 149
Interaction of silicene and germanene with non-metallic substrates 148
First-principles electronic functionalization of silicene and germanene by adatom chemisorption 146
TEM analysis of Textured Silicon Polymorph Crystals obtained via Nanoindentation and Annealing 141
Interaction of germanene with (0001)ZnSe surfaces: A theoretical study 137
Template effect of the nanowire core on the growth of hexagonal Si/Ge shell:a first principles modeling 134
Two-dimensional hexagonal tin: Ab initio geometry, stability, electronic structure and functionalization 133
Electronic properties of hydrogenated silicene and germanene 132
An electric field tunable energy band gap at silicene/(0001) ZnS interfaces 132
Structural and vibrational properties of amorphous GeO2from first-principles 131
Theoretical study of Ge dangling bonds in GeO 2 and correlation with ESR results at Ge/GeO 2 interfaces 130
Origin and Evolution of I3 defects in Hexagonal Silicon and Germanium 123
Unraveling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon and Germanium 116
Theoretical study of silicene and germanene 116
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 111
Electronic Properties of Perfect Dislocations in Germanium: A First-Principles Study 107
Interaction of Dopants with the I3-Type Basal Stacking Fault in Hexagonal-Diamond Si 94
Towards Hexagonal Germanium via Nanoindentation 91
Electronic and optical properties of stacking faults in hexagonal germanium. 87
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 80
Pressure-dependent kinetics of phase transitions in Si and Ge using machine learning interatomic potentials 80
Dopant interactions with I3-basal stacking faults in hexagonal silicon: first-principles insights into fundamental mechanisms. 79
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 75
Nanoindentation-Driven Formation of Textured Hexagonal Silicon Crystals 51
Totale 15.561
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Categoria #
all - tutte 50.151
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 50.151
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021195 0 0 0 0 0 0 0 0 0 0 0 195
2021/20221.172 107 85 154 99 63 93 69 64 65 98 105 170
2022/20231.480 184 403 149 152 82 176 18 77 86 45 57 51
2023/2024979 52 59 27 37 139 216 139 59 84 44 37 86
2024/20252.639 108 312 130 182 217 141 134 107 263 388 241 416
2025/20266.491 515 395 480 580 1.031 382 1.007 324 683 532 468 94
Totale 15.561