Bicocca Open Archive

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SCALISE, EMILIO
 Distribuzione geografica
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Continente #
NA - Nord America 6.869
AS - Asia 4.323
EU - Europa 3.989
SA - Sud America 602
Continente sconosciuto - Info sul continente non disponibili 575
AF - Africa 133
OC - Oceania 22
Totale 16.513
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Nazione #
US - Stati Uniti d'America 6.483
SG - Singapore 1.570
IT - Italia 1.439
CN - Cina 889
DE - Germania 653
VN - Vietnam 558
RU - Federazione Russa 513
HK - Hong Kong 480
BR - Brasile 452
CA - Canada 310
SE - Svezia 286
FR - Francia 239
IE - Irlanda 211
GB - Regno Unito 146
IN - India 136
BD - Bangladesh 115
JP - Giappone 105
UA - Ucraina 91
KR - Corea 87
ID - Indonesia 83
ES - Italia 78
FI - Finlandia 73
AR - Argentina 57
IQ - Iraq 47
NL - Olanda 47
MX - Messico 43
PK - Pakistan 41
ZA - Sudafrica 41
CH - Svizzera 36
TR - Turchia 34
DK - Danimarca 29
PL - Polonia 29
MA - Marocco 26
BE - Belgio 25
SA - Arabia Saudita 24
PH - Filippine 22
CO - Colombia 21
AU - Australia 20
AT - Austria 19
TW - Taiwan 19
EC - Ecuador 18
CL - Cile 17
UZ - Uzbekistan 15
MY - Malesia 14
KE - Kenya 13
VE - Venezuela 12
HU - Ungheria 11
GR - Grecia 10
AE - Emirati Arabi Uniti 9
AZ - Azerbaigian 9
DZ - Algeria 9
JM - Giamaica 9
TH - Thailandia 9
TN - Tunisia 9
ET - Etiopia 8
JO - Giordania 8
NO - Norvegia 8
PY - Paraguay 8
OM - Oman 7
CI - Costa d'Avorio 6
LT - Lituania 6
NP - Nepal 6
PS - Palestinian Territory 6
PT - Portogallo 6
RS - Serbia 6
SI - Slovenia 6
UY - Uruguay 6
BG - Bulgaria 5
HN - Honduras 5
PE - Perù 5
SC - Seychelles 5
CR - Costa Rica 4
GE - Georgia 4
IL - Israele 4
KZ - Kazakistan 4
LB - Libano 4
SN - Senegal 4
BH - Bahrain 3
BO - Bolivia 3
BY - Bielorussia 3
CZ - Repubblica Ceca 3
GY - Guiana 3
LY - Libia 3
TT - Trinidad e Tobago 3
AL - Albania 2
AM - Armenia 2
AO - Angola 2
BB - Barbados 2
EG - Egitto 2
GT - Guatemala 2
HR - Croazia 2
IR - Iran 2
LK - Sri Lanka 2
MD - Moldavia 2
NG - Nigeria 2
PA - Panama 2
PR - Porto Rico 2
RO - Romania 2
SY - Repubblica araba siriana 2
BN - Brunei Darussalam 1
Totale 15.924
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Città #
Ann Arbor 1.260
Singapore 874
San Jose 613
Milan 521
Ashburn 516
Frankfurt am Main 494
Hong Kong 462
Fairfield 296
Chandler 262
Toronto 232
Dublin 195
Wilmington 187
New York 167
Woodbridge 157
Los Angeles 156
Santa Clara 154
Ho Chi Minh City 153
Beijing 148
Dallas 146
Houston 143
Dearborn 138
Seattle 131
Chicago 121
Cambridge 118
Hanoi 114
Princeton 96
Hefei 95
The Dalles 85
Seoul 73
Dong Ket 68
Rome 68
Council Bluffs 67
Lauterbourg 66
Jakarta 64
Buffalo 62
São Paulo 59
Shanghai 58
Jacksonville 57
Moscow 43
Columbus 41
Miyamae Ku 40
Monza 40
Altamura 39
Lawrence 38
Nanjing 37
Munich 34
San Diego 33
Paris 30
Guangzhou 29
Turin 29
Helsinki 27
Montreal 27
Atlanta 26
Haiphong 26
Naples 26
Sesto San Giovanni 24
Brooklyn 23
Zurich 22
Da Nang 21
Johannesburg 21
Tokyo 21
Lappeenranta 20
Tianjin 20
Boardman 19
Chennai 19
Denver 19
Stockholm 19
London 18
Orem 18
Shenyang 18
Warsaw 18
Brescia 17
Dalmine 17
Hangzhou 17
Umeda 17
Andover 16
Boston 16
Como 16
Nuremberg 16
Sacramento 16
Vigano San Martino 16
Baghdad 15
Phoenix 15
Tashkent 15
Dhaka 14
Newark 14
Jinan 13
Pune 13
Querétaro 13
Berlin 12
Figino 12
Hebei 12
Kent 12
Manchester 12
Nairobi 12
Philadelphia 12
Washington 12
Basingstoke 11
Changsha 11
Desio 11
Totale 9.966
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Nome #
Stability and universal encapsulation of epitaxial Xenes 457
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 449
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 432
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 372
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 360
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 351
Tailoring the electronic properties of semiconducting nanocrystal-solids 317
Hexagonal Diamond phase of Si and Ge by nanoindentation 311
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 294
Two-dimensional Si nanosheets with local hexagonal structure on a MoS 2 surface 293
Exciton-driven change of phonon modes causes strong temperature dependent bandgap shift in nanoclusters 293
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 292
Getting through the Nature of Silicene: An sp(2)-sp(3) Two-Dimensional Silicon Nanosheet 290
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 287
Surface chemistry and buried interfaces in all-inorganic nanocrystalline solids 275
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 274
Hexagonal Si and Ge polytypes for silicon photonics 267
Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates 258
Structural and chemical stabilization of the epitaxial silicene 249
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 241
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 241
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 237
Morphological evolution and compositional segregation effects in core-shell nanowires 231
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 230
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation 229
Indirect Exciton–Phonon Dynamics in MoS2 Revealed by Ultrafast Electron Diffraction 229
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 228
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained 226
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 224
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 223
Vibrational Properties of Defective Oxides and 2D Nanolattices 223
Planar Hexagonal Germanium Grown on Cadmium Sulfide Substrate by Low-Energy Plasma-Enhanced Chemical Vapor Deposition. 217
Theoretical aspects of graphene-like group IV semiconductors 216
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 214
Vibrational properties of epitaxial silicene layers on (111) Ag 213
Silicene on non-metallic substrates: Recent theoretical and experimental advances 210
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale 209
Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate 206
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation 204
Atomic scale insights into Sn on Ge(100): From submonolayers to the formation of Sn wetting layers 203
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 202
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 196
New approaches and understandings in the growth of cubic silicon carbide 194
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 178
TEM analysis of Textured Silicon Polymorph Crystals obtained via Nanoindentation and Annealing 172
Predicting 2D silicon allotropes on SnS2 172
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure 169
Inelastic electron tunneling spectroscopy of HfO 2 gate stacks: A study based on first-principles modeling 167
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation 165
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 165
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 164
Synthesis of silicene on alternative substrates 164
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 162
Interaction of silicene and germanene with non-metallic substrates 161
First-principles study of strained 2D MoS2 160
Theoretical study of transition metal dichalcogenides 160
Origin and Evolution of I3 defects in Hexagonal Silicon and Germanium 159
Unveiling Planar Defects in Hexagonal Group IV Materials 154
Interaction of silicene and germanene with non-metallic substrates 151
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 148
First-principles electronic functionalization of silicene and germanene by adatom chemisorption 148
Interaction of germanene with (0001)ZnSe surfaces: A theoretical study 145
Template effect of the nanowire core on the growth of hexagonal Si/Ge shell:a first principles modeling 143
Two-dimensional hexagonal tin: Ab initio geometry, stability, electronic structure and functionalization 140
Interaction of Dopants with the I3-Type Basal Stacking Fault in Hexagonal-Diamond Si 137
Electronic properties of hydrogenated silicene and germanene 137
An electric field tunable energy band gap at silicene/(0001) ZnS interfaces 134
Structural and vibrational properties of amorphous GeO2from first-principles 133
Electronic and optical properties of stacking faults in hexagonal germanium. 132
Theoretical study of Ge dangling bonds in GeO 2 and correlation with ESR results at Ge/GeO 2 interfaces 131
Unraveling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon and Germanium 127
Electronic Properties of Perfect Dislocations in Germanium: A First-Principles Study 125
Theoretical study of silicene and germanene 125
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 114
Dopant interactions with I3-basal stacking faults in hexagonal silicon: first-principles insights into fundamental mechanisms. 104
Pressure-dependent kinetics of phase transitions in Si and Ge using machine learning interatomic potentials 103
Towards Hexagonal Germanium via Nanoindentation 102
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 100
Nanoindentation-Driven Formation of Textured Hexagonal Silicon Crystals 78
Hexotic and Metastable Phases in Group-IV Semiconductors: From Nanoindentation to Epitaxial Growth and Defect-Induced Magnetism 17
Totale 16.513
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Categoria #
all - tutte 54.214
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 54.214
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.065 0 85 154 99 63 93 69 64 65 98 105 170
2022/20231.480 184 403 149 152 82 176 18 77 86 45 57 51
2023/2024979 52 59 27 37 139 216 139 59 84 44 37 86
2024/20252.639 108 312 130 182 217 141 134 107 263 388 241 416
2025/20267.043 515 395 480 580 1.031 382 1.007 324 683 532 468 646
2026/2027400 292 108 0 0 0 0 0 0 0 0 0 0
Totale 16.513