Bicocca Open Archive

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SCALISE, EMILIO
 Distribuzione geografica
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Continente #
NA - Nord America 5.988
AS - Asia 4.237
EU - Europa 3.530
SA - Sud America 596
AF - Africa 132
OC - Oceania 22
Continente sconosciuto - Info sul continente non disponibili 1
Totale 14.506
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Nazione #
US - Stati Uniti d'America 5.853
SG - Singapore 1.566
IT - Italia 1.045
CN - Cina 870
DE - Germania 646
VN - Vietnam 556
RU - Federazione Russa 513
HK - Hong Kong 475
BR - Brasile 449
SE - Svezia 279
FR - Francia 210
IE - Irlanda 210
GB - Regno Unito 146
IN - India 133
JP - Giappone 102
UA - Ucraina 91
KR - Corea 87
ID - Indonesia 83
CA - Canada 78
ES - Italia 78
BD - Bangladesh 68
FI - Finlandia 67
AR - Argentina 56
IQ - Iraq 47
MX - Messico 41
PK - Pakistan 41
ZA - Sudafrica 41
NL - Olanda 38
CH - Svizzera 34
TR - Turchia 34
DK - Danimarca 29
PL - Polonia 29
MA - Marocco 25
BE - Belgio 24
SA - Arabia Saudita 24
PH - Filippine 22
CO - Colombia 21
AU - Australia 20
AT - Austria 19
TW - Taiwan 19
CL - Cile 17
EC - Ecuador 16
UZ - Uzbekistan 15
KE - Kenya 13
MY - Malesia 12
VE - Venezuela 12
GR - Grecia 10
AE - Emirati Arabi Uniti 9
AZ - Azerbaigian 9
DZ - Algeria 9
HU - Ungheria 9
TH - Thailandia 9
TN - Tunisia 9
ET - Etiopia 8
JO - Giordania 8
NO - Norvegia 8
PY - Paraguay 8
OM - Oman 7
CI - Costa d'Avorio 6
LT - Lituania 6
NP - Nepal 6
PS - Palestinian Territory 6
PT - Portogallo 6
RS - Serbia 6
SI - Slovenia 6
UY - Uruguay 6
BG - Bulgaria 5
PE - Perù 5
SC - Seychelles 5
GE - Georgia 4
IL - Israele 4
LB - Libano 4
SN - Senegal 4
BH - Bahrain 3
BO - Bolivia 3
BY - Bielorussia 3
CZ - Repubblica Ceca 3
GY - Guiana 3
HN - Honduras 3
JM - Giamaica 3
KZ - Kazakistan 3
LY - Libia 3
AM - Armenia 2
AO - Angola 2
CR - Costa Rica 2
EG - Egitto 2
HR - Croazia 2
IR - Iran 2
LK - Sri Lanka 2
MD - Moldavia 2
NG - Nigeria 2
PA - Panama 2
RO - Romania 2
SY - Repubblica araba siriana 2
TT - Trinidad e Tobago 2
AL - Albania 1
BB - Barbados 1
BN - Brunei Darussalam 1
BZ - Belize 1
EE - Estonia 1
Totale 14.494
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Città #
Ann Arbor 1.260
Singapore 872
Frankfurt am Main 494
San Jose 490
Ashburn 478
Hong Kong 458
Milan 367
Fairfield 296
Chandler 262
Dublin 195
Wilmington 187
Woodbridge 157
Ho Chi Minh City 153
Beijing 146
Dallas 139
Houston 139
Dearborn 138
Los Angeles 137
New York 137
Santa Clara 130
Seattle 125
Cambridge 118
Chicago 117
Hanoi 114
Hefei 95
Princeton 94
The Dalles 82
Seoul 73
Dong Ket 68
Lauterbourg 66
Jakarta 64
São Paulo 59
Jacksonville 57
Shanghai 57
Buffalo 56
Council Bluffs 54
Moscow 43
Miyamae Ku 40
Altamura 39
Monza 39
Lawrence 38
Nanjing 37
Munich 34
San Diego 33
Paris 30
Guangzhou 29
Rome 29
Haiphong 26
Helsinki 24
Sesto San Giovanni 22
Atlanta 21
Da Nang 21
Johannesburg 21
Montreal 21
Tokyo 21
Zurich 21
Lappeenranta 20
Tianjin 20
Turin 20
Brooklyn 19
Stockholm 19
Chennai 18
London 18
Shenyang 18
Toronto 18
Warsaw 18
Dalmine 17
Denver 17
Hangzhou 17
Orem 17
Umeda 17
Andover 16
Como 16
Nuremberg 16
Vigano San Martino 16
Baghdad 15
Boston 15
Tashkent 15
Brescia 14
Dhaka 14
Jinan 13
Naples 13
Phoenix 13
Pune 13
Querétaro 13
Sacramento 13
Boardman 12
Hebei 12
Kent 12
Manchester 12
Nairobi 12
Basingstoke 11
Berlin 11
Desio 11
Lahore 11
Newark 11
Poplar 11
Ribeirão Preto 11
Amsterdam 10
Ankara 10
Totale 9.168
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Nome #
Stability and universal encapsulation of epitaxial Xenes 444
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 440
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 423
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 347
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 344
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 331
Tailoring the electronic properties of semiconducting nanocrystal-solids 307
Hexagonal Diamond phase of Si and Ge by nanoindentation 297
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 288
Exciton-driven change of phonon modes causes strong temperature dependent bandgap shift in nanoclusters 286
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 279
Two-dimensional Si nanosheets with local hexagonal structure on a MoS 2 surface 278
Getting through the Nature of Silicene: An sp(2)-sp(3) Two-Dimensional Silicon Nanosheet 277
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 269
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon 268
Surface chemistry and buried interfaces in all-inorganic nanocrystalline solids 262
Hexagonal Si and Ge polytypes for silicon photonics 251
Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates 242
Structural and chemical stabilization of the epitaxial silicene 230
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 229
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 229
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation 218
Vibrational Properties of Defective Oxides and 2D Nanolattices 216
Morphological evolution and compositional segregation effects in core-shell nanowires 216
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 213
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires 211
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 209
Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium 206
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 206
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 203
Vibrational properties of epitaxial silicene layers on (111) Ag 202
Silicene on non-metallic substrates: Recent theoretical and experimental advances 201
Indirect Exciton–Phonon Dynamics in MoS2 Revealed by Ultrafast Electron Diffraction 199
Theoretical aspects of graphene-like group IV semiconductors 198
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation 196
Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate 196
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale 196
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 196
Atomic scale insights into Sn on Ge(100): From submonolayers to the formation of Sn wetting layers 191
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained 189
New approaches and understandings in the growth of cubic silicon carbide 183
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 180
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 165
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 163
Synthesis of silicene on alternative substrates 159
Predicting 2D silicon allotropes on SnS2 159
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation 155
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 155
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure 154
Inelastic electron tunneling spectroscopy of HfO 2 gate stacks: A study based on first-principles modeling 150
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 150
Theoretical study of transition metal dichalcogenides 149
Planar Hexagonal Germanium Grown on Cadmium Sulfide Substrate by Low-Energy Plasma-Enhanced Chemical Vapor Deposition. 148
Unveiling Planar Defects in Hexagonal Group IV Materials 146
First-principles electronic functionalization of silicene and germanene by adatom chemisorption 145
First-principles study of strained 2D MoS2 143
Interaction of silicene and germanene with non-metallic substrates 142
Interaction of silicene and germanene with non-metallic substrates 141
Interaction of germanene with (0001)ZnSe surfaces: A theoretical study 130
TEM analysis of Textured Silicon Polymorph Crystals obtained via Nanoindentation and Annealing 128
Template effect of the nanowire core on the growth of hexagonal Si/Ge shell:a first principles modeling 127
Electronic properties of hydrogenated silicene and germanene 125
An electric field tunable energy band gap at silicene/(0001) ZnS interfaces 125
Structural and vibrational properties of amorphous GeO2from first-principles 124
Two-dimensional hexagonal tin: Ab initio geometry, stability, electronic structure and functionalization 123
Theoretical study of Ge dangling bonds in GeO 2 and correlation with ESR results at Ge/GeO 2 interfaces 123
Unraveling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon and Germanium 110
Theoretical study of silicene and germanene 109
Origin and Evolution of I3 defects in Hexagonal Silicon and Germanium 102
Electronic Properties of Perfect Dislocations in Germanium: A First-Principles Study 100
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 99
Interaction of Dopants with the I3-Type Basal Stacking Fault in Hexagonal-Diamond Si 89
Towards Hexagonal Germanium via Nanoindentation 83
Electronic and optical properties of stacking faults in hexagonal germanium. 78
Pressure-dependent kinetics of phase transitions in Si and Ge using machine learning interatomic potentials 76
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation 75
Dopant interactions with I3-basal stacking faults in hexagonal silicon: first-principles insights into fundamental mechanisms. 73
Electronic Properties of Extended Defects in Germanium: A First-Principles Study 65
Nanoindentation-Driven Formation of Textured Hexagonal Silicon Crystals 43
Totale 15.077
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Categoria #
all - tutte 48.158
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 48.158
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021285 0 0 0 0 0 0 0 0 0 0 90 195
2021/20221.172 107 85 154 99 63 93 69 64 65 98 105 170
2022/20231.480 184 403 149 152 82 176 18 77 86 45 57 51
2023/2024979 52 59 27 37 139 216 139 59 84 44 37 86
2024/20252.639 108 312 130 182 217 141 134 107 263 388 241 416
2025/20266.007 515 395 480 580 1.031 382 1.007 324 683 532 78 0
Totale 15.077