SCALISE, EMILIO
 Distribuzione geografica
Continente #
NA - Nord America 3.496
EU - Europa 2.021
AS - Asia 475
AF - Africa 17
SA - Sud America 8
OC - Oceania 4
Continente sconosciuto - Info sul continente non disponibili 1
Totale 6.022
Nazione #
US - Stati Uniti d'America 3.468
DE - Germania 771
IT - Italia 491
CN - Cina 266
SE - Svezia 260
IE - Irlanda 198
VN - Vietnam 82
GB - Regno Unito 64
UA - Ucraina 61
HK - Hong Kong 44
FR - Francia 32
CA - Canada 27
JP - Giappone 27
DK - Danimarca 26
BE - Belgio 25
ES - Italia 25
RU - Federazione Russa 20
IN - India 16
NL - Olanda 11
MA - Marocco 9
FI - Finlandia 8
PK - Pakistan 8
KR - Corea 7
BD - Bangladesh 6
PL - Polonia 6
TW - Taiwan 6
BG - Bulgaria 5
BR - Brasile 5
CH - Svizzera 5
AT - Austria 4
AU - Australia 4
CI - Costa d'Avorio 4
GR - Grecia 3
TR - Turchia 3
AR - Argentina 2
IR - Iran 2
NO - Norvegia 2
PH - Filippine 2
SC - Seychelles 2
CZ - Repubblica Ceca 1
EC - Ecuador 1
EU - Europa 1
HU - Ungheria 1
IL - Israele 1
IQ - Iraq 1
LK - Sri Lanka 1
MX - Messico 1
NG - Nigeria 1
OM - Oman 1
RO - Romania 1
RS - Serbia 1
SG - Singapore 1
TH - Thailandia 1
ZA - Sudafrica 1
Totale 6.022
Città #
Ann Arbor 1.258
Frankfurt am Main 723
Fairfield 296
Chandler 262
Milan 199
Dublin 190
Wilmington 186
Ashburn 169
Woodbridge 157
Dearborn 138
Houston 133
Seattle 120
Cambridge 114
New York 99
Princeton 94
Dong Ket 68
Jacksonville 53
Altamura 39
Lawrence 38
Nanjing 37
Hong Kong 36
San Diego 30
Shanghai 30
Guangzhou 23
Beijing 20
Shenyang 17
Umeda 17
Andover 16
Monza 16
Vigano San Martino 16
Brussels 15
Hangzhou 13
Turin 13
Hebei 12
Jinan 12
Tianjin 12
Chicago 11
Dalmine 11
Sacramento 11
Toronto 11
Fremont 9
Pune 9
Jiaxing 8
Kunming 8
London 8
Norwalk 8
Paris 8
Brescia 7
Los Angeles 7
Nanchang 7
Ningbo 7
Zhengzhou 7
Ardea 6
Boardman 6
Cagliari 6
Chittagong 6
Colle 6
Edmonton 6
Fornovo San Giovanni 6
Rome 6
Casablanca 5
Cesano Maderno 5
Chiavenna 5
Chiyoda-ku 5
Grafing 5
Karachi 5
Kiev 5
Leipzig 5
Leuven 5
Verdello 5
Abidjan 4
Amsterdam 4
Changsha 4
Council Bluffs 4
Hefei 4
Heidelberg 4
Lachine 4
Liscate 4
Mountain View 4
Ottawa 4
Poznan 4
Sai Kung 4
São Paulo 4
Torino 4
Ansan-si 3
Bergamo 3
Berlin 3
Calusco d'Adda 3
Castano Primo 3
Daejeon 3
Falls Church 3
Florence 3
Geneva 3
Harbin 3
Kardzhali 3
Kocaeli 3
Neubiberg 3
Novosibirsk 3
Redmond 3
San Biagio di Callalta 3
Totale 5.010
Nome #
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 304
Stability and universal encapsulation of epitaxial Xenes 297
The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach 268
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires 248
Exciton-driven change of phonon modes causes strong temperature dependent bandgap shift in nanoclusters 216
Temperature-Dependent Stability of Polytypes and Stacking Faults in SiC: Reconciling Theory and Experiments 211
Molecular dynamics simulations of extended defects and their evolution in 3C-SiC by different potentials 203
Tailoring the electronic properties of semiconducting nanocrystal-solids 202
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation 179
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 170
Getting through the Nature of Silicene: An sp(2)-sp(3) Two-Dimensional Silicon Nanosheet 169
Surface chemistry and buried interfaces in all-inorganic nanocrystalline solids 158
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale 152
Morphological evolution and compositional segregation effects in core-shell nanowires 140
Vibrational Properties of Defective Oxides and 2D Nanolattices 134
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 133
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 131
Vibrational properties of epitaxial silicene layers on (111) Ag 130
Theoretical aspects of graphene-like group IV semiconductors 127
Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates 126
Two-dimensional Si nanosheets with local hexagonal structure on a MoS 2 surface 123
Silicene on non-metallic substrates: Recent theoretical and experimental advances 117
Crystal free energy of SiC polytypes and stacking faults formation energy from DFT-based lattice-dynamics approach 112
Atomic scale insights into Sn on Ge(100): From submonolayers to the formation of Sn wetting layers 111
New approaches and understandings in the growth of cubic silicon carbide 108
Hexagonal Diamond phase of Si and Ge by nanoindentation 105
From the crystal free energy of SiC polytypes to the stacking faults formation energy: a DFT-based lattice-dynamics approach. 102
Predicting 2D silicon allotropes on SnS2 101
Structural and chemical stabilization of the epitaxial silicene 101
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS 2 97
Interaction of silicene and germanene with non-metallic substrates 96
Theoretical study of transition metal dichalcogenides 89
Interaction of germanene with (0001)ZnSe surfaces: A theoretical study 88
Inelastic electron tunneling spectroscopy of HfO 2 gate stacks: A study based on first-principles modeling 88
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 88
Synthesis of silicene on alternative substrates 84
First-principles electronic functionalization of silicene and germanene by adatom chemisorption 82
First-principles study of strained 2D MoS2 81
Interaction of silicene and germanene with non-metallic substrates 80
Unveiling Planar Defects in Hexagonal Group IV Materials 80
Structural and vibrational properties of amorphous GeO2from first-principles 78
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition 71
Two-dimensional hexagonal tin: Ab initio geometry, stability, electronic structure and functionalization 62
Electronic properties of hydrogenated silicene and germanene 62
Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case 62
Theoretical study of silicene and germanene 60
Theoretical study of Ge dangling bonds in GeO 2 and correlation with ESR results at Ge/GeO 2 interfaces 60
An electric field tunable energy band gap at silicene/(0001) ZnS interfaces 57
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect 56
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy 55
Impact of Inversion Domain Boundaries on the Electronic Properties of 3C-SiC 47
Hexagonal Si and Ge polytypes for silicon photonics 43
Indirect Exciton–Phonon Dynamics in MoS2 Revealed by Ultrafast Electron Diffraction 43
Template effect of the nanowire core on the growth of hexagonal Si/Ge shell:a first principles modeling 34
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect 31
Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate 11
Totale 6.463
Categoria #
all - tutte 17.695
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 17.695


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019209 0 0 0 0 0 0 0 27 19 20 51 92
2019/20201.108 76 37 122 96 90 153 157 96 122 72 65 22
2020/20211.168 23 49 100 87 91 102 71 147 92 121 90 195
2021/20221.172 107 85 154 99 63 93 69 64 65 98 105 170
2022/20231.704 184 403 149 152 82 176 35 120 136 88 97 82
2023/2024787 63 71 45 46 149 216 139 58 0 0 0 0
Totale 6.463