The electronic properties of two-dimensional honeycomb structures of molybdenum disulfide (MoS2) subjected to biaxial strain have been investigated using first-principles calculations based on density functional theory. On applying compressive or tensile bi-axial strain on bi-layer and mono-layer MoS2, the electronic properties are predicted to change from semiconducting to metallic. These changes present very interesting possibilities for engineering the electronic properties of two-dimensional structures of MoS2. © 2012 Tsinghua University Press and Springer-Verlag Berlin Heidelberg
Scalise, E., Houssa, M., Pourtois, G., Afanas'Ev, V., & Stesmans, A. (2012). Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS 2. NANO RESEARCH, 5(1), 43-48 [10.1007/s12274-011-0183-0].
Citazione: | Scalise, E., Houssa, M., Pourtois, G., Afanas'Ev, V., & Stesmans, A. (2012). Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS 2. NANO RESEARCH, 5(1), 43-48 [10.1007/s12274-011-0183-0]. | |
Tipo: | Articolo in rivista - Articolo scientifico | |
Carattere della pubblicazione: | Scientifica | |
Presenza di un coautore afferente ad Istituzioni straniere: | Si | |
Titolo: | Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS 2 | |
Autori: | Scalise, E; Houssa, M; Pourtois, G; Afanas'Ev, V; Stesmans, A | |
Autori: | ||
Data di pubblicazione: | 2012 | |
Lingua: | English | |
Rivista: | NANO RESEARCH | |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1007/s12274-011-0183-0 | |
Appare nelle tipologie: | 01 - Articolo su rivista |