The electronic properties of hydrogenated silicene and germanene, so called silicane and germanane, respectively, are investigated using first-principles calculations based on density functional theory. Two different atomic configurations are found to be stable and energetically degenerate. Upon the adsorption of hydrogen, an energy gap opens in silicene and germanene. Their energy gaps are next computed using the HSE hybrid functional as well as the G0W0many-body perturbation method. These materials are found to be wide band-gap semiconductors, the type of gap in silicane (direct or indirect) depending on its atomic configuration. Germanane is predicted to be a direct-gap material, independent of its atomic configuration, with an average energy gap of about 3.2 eV, this material thus being potentially interesting for optoelectronic applications in the blue/violet spectral range. © 2011 American Institute of Physics

Houssa, M., Scalise, E., Sankaran, K., Pourtois, ., Afanas'Ev, V., Stesmans, A. (2011). Electronic properties of hydrogenated silicene and germanene. APPLIED PHYSICS LETTERS, 98(22) [10.1063/1.3595682].

Electronic properties of hydrogenated silicene and germanene

Scalise, E;
2011

Abstract

The electronic properties of hydrogenated silicene and germanene, so called silicane and germanane, respectively, are investigated using first-principles calculations based on density functional theory. Two different atomic configurations are found to be stable and energetically degenerate. Upon the adsorption of hydrogen, an energy gap opens in silicene and germanene. Their energy gaps are next computed using the HSE hybrid functional as well as the G0W0many-body perturbation method. These materials are found to be wide band-gap semiconductors, the type of gap in silicane (direct or indirect) depending on its atomic configuration. Germanane is predicted to be a direct-gap material, independent of its atomic configuration, with an average energy gap of about 3.2 eV, this material thus being potentially interesting for optoelectronic applications in the blue/violet spectral range. © 2011 American Institute of Physics
Articolo in rivista - Articolo scientifico
Physics and Astronomy (miscellaneous)
English
2011
98
22
223107
none
Houssa, M., Scalise, E., Sankaran, K., Pourtois, ., Afanas'Ev, V., Stesmans, A. (2011). Electronic properties of hydrogenated silicene and germanene. APPLIED PHYSICS LETTERS, 98(22) [10.1063/1.3595682].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/181806
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