SALVALAGLIO, MARCO
 Distribuzione geografica
Continente #
NA - Nord America 4.020
AS - Asia 2.079
EU - Europa 1.918
SA - Sud America 276
AF - Africa 55
OC - Oceania 3
Continente sconosciuto - Info sul continente non disponibili 1
Totale 8.352
Nazione #
US - Stati Uniti d'America 3.781
SG - Singapore 728
CN - Cina 475
IT - Italia 410
DE - Germania 354
VN - Vietnam 285
RU - Federazione Russa 266
HK - Hong Kong 265
CA - Canada 214
BR - Brasile 197
SE - Svezia 187
IE - Irlanda 154
GB - Regno Unito 139
UA - Ucraina 125
FR - Francia 73
IN - India 69
FI - Finlandia 61
TR - Turchia 49
AT - Austria 39
BD - Bangladesh 35
AR - Argentina 31
IQ - Iraq 27
KR - Corea 23
ES - Italia 22
DK - Danimarca 20
SA - Arabia Saudita 19
ID - Indonesia 17
ZA - Sudafrica 15
MX - Messico 14
NL - Olanda 14
JP - Giappone 13
CO - Colombia 12
PK - Pakistan 12
BE - Belgio 11
EC - Ecuador 11
UZ - Uzbekistan 11
MA - Marocco 10
CL - Cile 8
CH - Svizzera 7
NP - Nepal 7
PH - Filippine 7
VE - Venezuela 7
LT - Lituania 6
AL - Albania 5
MY - Malesia 5
TH - Thailandia 5
TN - Tunisia 5
TW - Taiwan 5
AZ - Azerbaigian 4
PL - Polonia 4
RO - Romania 4
BY - Bielorussia 3
CI - Costa d'Avorio 3
ET - Etiopia 3
JO - Giordania 3
KE - Kenya 3
KZ - Kazakistan 3
PY - Paraguay 3
SC - Seychelles 3
UY - Uruguay 3
AU - Australia 2
CR - Costa Rica 2
CZ - Repubblica Ceca 2
DZ - Algeria 2
GR - Grecia 2
JM - Giamaica 2
KG - Kirghizistan 2
LY - Libia 2
MD - Moldavia 2
PE - Perù 2
SV - El Salvador 2
AE - Emirati Arabi Uniti 1
AO - Angola 1
BG - Bulgaria 1
BO - Bolivia 1
BT - Bhutan 1
BZ - Belize 1
DJ - Gibuti 1
DO - Repubblica Dominicana 1
EG - Egitto 1
EU - Europa 1
GA - Gabon 1
GE - Georgia 1
GH - Ghana 1
GY - Guiana 1
HN - Honduras 1
HR - Croazia 1
IL - Israele 1
IR - Iran 1
IS - Islanda 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LU - Lussemburgo 1
ME - Montenegro 1
MG - Madagascar 1
NG - Nigeria 1
NI - Nicaragua 1
OM - Oman 1
PT - Portogallo 1
Totale 8.345
Città #
Singapore 419
Ashburn 332
Woodbridge 331
Ann Arbor 293
Fairfield 280
Hong Kong 254
San Jose 235
Chandler 226
Houston 202
Milan 175
Frankfurt am Main 166
Jacksonville 154
Toronto 153
Dublin 149
Santa Clara 116
New York 115
Wilmington 115
Seattle 106
Dearborn 94
Cambridge 79
Beijing 75
Princeton 72
Dong Ket 68
Ho Chi Minh City 67
Los Angeles 62
The Dalles 61
Nanjing 57
Dallas 55
Council Bluffs 52
Chicago 51
Dresden 49
Hanoi 44
Southend 43
Shanghai 35
Vienna 31
Lauterbourg 30
Rome 30
Buffalo 28
Altamura 27
Lachine 26
Lawrence 24
Helsinki 22
Moscow 22
São Paulo 20
Jiaxing 16
Nanchang 16
Shenyang 14
Cagliari 13
San Diego 13
Seoul 13
Washington 13
Berlin 12
Boardman 12
Jinan 12
Turin 11
Baghdad 10
Changsha 10
Guangzhou 10
Hefei 10
Kunming 10
London 10
Montreal 10
Norwalk 10
Redondo Beach 10
Andover 9
Atlanta 9
Jakarta 9
Orem 9
Tashkent 9
Tianjin 9
Tokyo 9
Bozeman 8
Brussels 8
Falls Church 8
Hangzhou 8
Hebei 8
Ottawa 8
Phoenix 8
Boston 7
Da Nang 7
Dhaka 7
Düsseldorf 7
Karlsruhe 7
Munich 7
New Delhi 7
Pune 7
Riyadh 7
Sacramento 7
Basingstoke 6
Haiphong 6
Hwaseong-si 6
Jeddah 6
Las Cruces 6
Mountain View 6
Ningbo 6
Charlotte 5
Curitiba 5
Dammam 5
Hải Dương 5
Kanpur 5
Totale 5.536
Nome #
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 340
Dislocation-free SiGe/Si heterostructures 328
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 325
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 314
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 306
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures 296
Continuum modeling of vertical heterostructures: elastic properties and morphological evolution 286
Hydrostatic strain enhancement in laterally confined SiGe nanostripes 283
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 280
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 269
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 266
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 257
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 249
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 244
Continuum modeling of heteroepitaxial growth in semiconductors 244
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 237
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 235
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 233
Ge Crystals on Si Show Their Light 232
GaAs/Ge crystals grown on Si substrates patterned down to the micron scale 231
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 223
Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals 220
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 219
Fully coherent growth of Ge on free-standing Si(001) nanomesas 213
Fine control of plastic and elastic relaxation in Ge/Si vertical heterostructures 209
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 207
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 202
Si CMOS compatible, compliant integration of lattice-mismatched semiconductors on Si(001): Example of fully coherent Ge/Si nanostructures 200
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 196
Morphological Evolution of Pit-Patterned Si(001) Substrates Driven by Surface-Energy Reduction 191
Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns 191
Strain relaxation of GaAs/Ge crystals on patterned Si substrates 190
Heteroepitaxy in out-of-equilibrium conditions on dense Si-pillar arrays: a new monolithic integration strategy 185
Fully coherent Ge islands growth on Si nano-pillars by selective epitaxy 177
Enhancing elastic stress relaxation in SiGe/Si heterostructures by Si pillar necking 130
From plastic to elastic stress relaxation in highly mismatched SiGe/Si heterostructures 128
Totale 8.536
Categoria #
all - tutte 28.070
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 28.070


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022350 24 26 27 42 21 29 21 22 16 43 19 60
2022/2023804 76 248 91 90 47 124 2 45 56 2 13 10
2023/2024530 19 23 16 18 72 166 90 19 36 5 12 54
2024/20251.114 63 130 59 46 91 70 22 79 101 185 78 190
2025/20262.921 327 166 217 200 328 144 411 121 255 263 208 281
Totale 8.536