SALVALAGLIO, MARCO
 Distribuzione geografica
Continente #
NA - Nord America 4.238
AS - Asia 2.091
EU - Europa 1.929
SA - Sud America 280
Continente sconosciuto - Info sul continente non disponibili 185
AF - Africa 56
OC - Oceania 3
Totale 8.782
Nazione #
US - Stati Uniti d'America 3.990
SG - Singapore 730
CN - Cina 478
IT - Italia 417
DE - Germania 355
VN - Vietnam 286
RU - Federazione Russa 266
HK - Hong Kong 265
CA - Canada 218
BR - Brasile 199
SE - Svezia 187
IE - Irlanda 154
GB - Regno Unito 140
UA - Ucraina 125
FR - Francia 73
IN - India 69
FI - Finlandia 61
TR - Turchia 49
BD - Bangladesh 40
AT - Austria 39
AR - Argentina 31
IQ - Iraq 27
KR - Corea 23
ES - Italia 22
DK - Danimarca 20
SA - Arabia Saudita 20
ID - Indonesia 17
MX - Messico 16
NL - Olanda 15
ZA - Sudafrica 15
CO - Colombia 13
JP - Giappone 13
PK - Pakistan 12
BE - Belgio 11
EC - Ecuador 11
UZ - Uzbekistan 11
MA - Marocco 10
CL - Cile 9
CH - Svizzera 7
NP - Nepal 7
PH - Filippine 7
VE - Venezuela 7
LT - Lituania 6
AL - Albania 5
MY - Malesia 5
TH - Thailandia 5
TN - Tunisia 5
TW - Taiwan 5
AZ - Azerbaigian 4
KE - Kenya 4
PL - Polonia 4
RO - Romania 4
BY - Bielorussia 3
CI - Costa d'Avorio 3
CR - Costa Rica 3
ET - Etiopia 3
JO - Giordania 3
KZ - Kazakistan 3
NI - Nicaragua 3
PY - Paraguay 3
SC - Seychelles 3
UY - Uruguay 3
AU - Australia 2
CZ - Repubblica Ceca 2
DZ - Algeria 2
GR - Grecia 2
JM - Giamaica 2
KG - Kirghizistan 2
LY - Libia 2
MD - Moldavia 2
PE - Perù 2
PT - Portogallo 2
SV - El Salvador 2
AE - Emirati Arabi Uniti 1
AO - Angola 1
BG - Bulgaria 1
BO - Bolivia 1
BT - Bhutan 1
BZ - Belize 1
DJ - Gibuti 1
DO - Repubblica Dominicana 1
EG - Egitto 1
EU - Europa 1
GA - Gabon 1
GE - Georgia 1
GH - Ghana 1
GY - Guiana 1
HN - Honduras 1
HR - Croazia 1
IL - Israele 1
IR - Iran 1
IS - Islanda 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LU - Lussemburgo 1
ME - Montenegro 1
MG - Madagascar 1
NG - Nigeria 1
OM - Oman 1
Totale 8.591
Città #
Singapore 421
Ashburn 358
Woodbridge 331
Ann Arbor 293
Fairfield 280
Hong Kong 254
San Jose 247
Chandler 226
Houston 202
Milan 178
Frankfurt am Main 166
Jacksonville 154
Toronto 153
Dublin 149
Santa Clara 125
New York 115
Wilmington 115
Seattle 111
Council Bluffs 105
Dearborn 94
Cambridge 79
Beijing 75
Princeton 72
Dong Ket 68
Ho Chi Minh City 68
Los Angeles 64
The Dalles 61
Nanjing 57
Dallas 56
Chicago 52
Dresden 50
Hanoi 44
Southend 43
Shanghai 36
Vienna 31
Lauterbourg 30
Rome 30
Buffalo 28
Altamura 27
Lachine 26
Lawrence 24
Helsinki 22
Moscow 22
São Paulo 21
Jiaxing 16
Nanchang 16
Washington 16
Shenyang 14
Cagliari 13
San Diego 13
Seoul 13
Berlin 12
Boardman 12
Jinan 12
London 12
Phoenix 12
Norwalk 11
Turin 11
Atlanta 10
Baghdad 10
Changsha 10
Guangzhou 10
Hefei 10
Kunming 10
Montreal 10
Orem 10
Redondo Beach 10
Andover 9
Columbus 9
Jakarta 9
Tashkent 9
Tianjin 9
Tokyo 9
Bozeman 8
Brussels 8
Falls Church 8
Hangzhou 8
Hebei 8
Ottawa 8
Boston 7
Da Nang 7
Dhaka 7
Düsseldorf 7
Karlsruhe 7
Munich 7
New Delhi 7
Pune 7
Riyadh 7
Sacramento 7
Basingstoke 6
Charlotte 6
Haiphong 6
Hwaseong-si 6
Jeddah 6
Las Cruces 6
Mountain View 6
Ningbo 6
Curitiba 5
Dammam 5
Hải Dương 5
Totale 5.671
Nome #
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 347
Dislocation-free SiGe/Si heterostructures 333
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 331
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 323
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 316
Continuum modeling of vertical heterostructures: elastic properties and morphological evolution 304
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures 303
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 294
Hydrostatic strain enhancement in laterally confined SiGe nanostripes 286
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 276
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 272
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 264
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 252
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 252
Continuum modeling of heteroepitaxial growth in semiconductors 252
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 243
Ge Crystals on Si Show Their Light 239
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 239
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 238
GaAs/Ge crystals grown on Si substrates patterned down to the micron scale 237
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 235
Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals 226
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 224
Fully coherent growth of Ge on free-standing Si(001) nanomesas 216
Fine control of plastic and elastic relaxation in Ge/Si vertical heterostructures 212
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 210
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 209
Si CMOS compatible, compliant integration of lattice-mismatched semiconductors on Si(001): Example of fully coherent Ge/Si nanostructures 203
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 201
Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns 200
Strain relaxation of GaAs/Ge crystals on patterned Si substrates 195
Morphological Evolution of Pit-Patterned Si(001) Substrates Driven by Surface-Energy Reduction 195
Heteroepitaxy in out-of-equilibrium conditions on dense Si-pillar arrays: a new monolithic integration strategy 187
Fully coherent Ge islands growth on Si nano-pillars by selective epitaxy 183
Enhancing elastic stress relaxation in SiGe/Si heterostructures by Si pillar necking 147
From plastic to elastic stress relaxation in highly mismatched SiGe/Si heterostructures 138
Totale 8.782
Categoria #
all - tutte 29.388
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 29.388


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022300 0 0 27 42 21 29 21 22 16 43 19 60
2022/2023804 76 248 91 90 47 124 2 45 56 2 13 10
2023/2024530 19 23 16 18 72 166 90 19 36 5 12 54
2024/20251.114 63 130 59 46 91 70 22 79 101 185 78 190
2025/20262.921 327 166 217 200 328 144 411 121 255 263 208 281
2026/2027246 111 124 11 0 0 0 0 0 0 0 0 0
Totale 8.782