SALVALAGLIO, MARCO
 Distribuzione geografica
Continente #
NA - Nord America 3.334
EU - Europa 1.648
AS - Asia 1.588
SA - Sud America 209
AF - Africa 23
OC - Oceania 3
Continente sconosciuto - Info sul continente non disponibili 1
Totale 6.806
Nazione #
US - Stati Uniti d'America 3.254
SG - Singapore 558
CN - Cina 447
DE - Germania 327
RU - Federazione Russa 260
HK - Hong Kong 257
IT - Italia 251
SE - Svezia 185
BR - Brasile 169
VN - Vietnam 166
IE - Irlanda 154
GB - Regno Unito 125
UA - Ucraina 122
CA - Canada 61
FI - Finlandia 54
FR - Francia 44
AT - Austria 38
TR - Turchia 34
IN - India 32
DK - Danimarca 20
AR - Argentina 17
ES - Italia 17
BD - Bangladesh 16
ID - Indonesia 13
MX - Messico 13
IQ - Iraq 12
BE - Belgio 9
KR - Corea 8
NL - Olanda 8
ZA - Sudafrica 8
CH - Svizzera 7
JP - Giappone 7
MA - Marocco 7
LT - Lituania 6
PK - Pakistan 6
CO - Colombia 5
SA - Arabia Saudita 5
EC - Ecuador 4
PL - Polonia 4
TW - Taiwan 4
VE - Venezuela 4
AL - Albania 3
AZ - Azerbaigian 3
CL - Cile 3
MY - Malesia 3
NP - Nepal 3
PY - Paraguay 3
RO - Romania 3
TH - Thailandia 3
UZ - Uzbekistan 3
AU - Australia 2
BY - Bielorussia 2
CZ - Repubblica Ceca 2
KG - Kirghizistan 2
KZ - Kazakistan 2
MD - Moldavia 2
TN - Tunisia 2
UY - Uruguay 2
AO - Angola 1
BG - Bulgaria 1
BO - Bolivia 1
BZ - Belize 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
DO - Repubblica Dominicana 1
ET - Etiopia 1
EU - Europa 1
GA - Gabon 1
GR - Grecia 1
HN - Honduras 1
IR - Iran 1
IS - Islanda 1
JO - Giordania 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
PE - Perù 1
PH - Filippine 1
SC - Seychelles 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
SV - El Salvador 1
TO - Tonga 1
TT - Trinidad e Tobago 1
Totale 6.806
Città #
Woodbridge 330
Singapore 323
Ann Arbor 293
Fairfield 280
Ashburn 275
Hong Kong 251
Chandler 226
Houston 202
Frankfurt am Main 164
Jacksonville 154
Dublin 149
Wilmington 115
New York 113
Santa Clara 108
Milan 106
Seattle 106
Dearborn 94
Cambridge 79
Beijing 75
Princeton 72
Dong Ket 68
Nanjing 57
Dallas 52
Los Angeles 50
Southend 43
Dresden 41
The Dalles 36
Shanghai 35
Council Bluffs 32
Vienna 31
Buffalo 28
Ho Chi Minh City 28
Altamura 27
Lachine 26
Lawrence 24
Moscow 20
São Paulo 20
Hanoi 17
Jiaxing 16
Nanchang 16
Chicago 15
Helsinki 15
Shenyang 14
Cagliari 13
Boardman 12
Jinan 12
San Diego 12
Toronto 11
Changsha 10
Guangzhou 10
Hefei 10
Kunming 10
Redondo Beach 10
Andover 9
London 9
Norwalk 9
Tianjin 9
Falls Church 8
Hangzhou 8
Hebei 8
Jakarta 8
Ottawa 8
Brussels 7
Karlsruhe 7
Montreal 7
Munich 7
Rome 7
Dhaka 6
Düsseldorf 6
Mountain View 6
Ningbo 6
Phoenix 6
Tokyo 6
Washington 6
Baghdad 5
Curitiba 5
Hwaseong-si 5
Pune 5
Redmond 5
Rio de Janeiro 5
Taizhou 5
Valladolid 5
Atlanta 4
Brooklyn 4
Elk Grove Village 4
Hải Dương 4
Kanpur 4
Kent 4
Lauterbourg 4
Mexico City 4
New Delhi 4
Nuremberg 4
San Francisco 4
Stockholm 4
Tampa 4
Baku 3
Bangkok 3
Berlin 3
Bogotá 3
Boston 3
Totale 4.596
Nome #
Epitaxial self-assembly of 3-D semiconductor structures on deeply patterned Si substrates at the microscale 290
Dislocation-free SiGe/Si heterostructures 284
Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film 280
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars 269
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires 264
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures 251
Faceting of equilibrium and metastable nanostructures: A phase-field model of surface diffusion tackling realistic shapes 244
Hydrostatic strain enhancement in laterally confined SiGe nanostripes 233
Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si 228
Continuum modeling of vertical heterostructures: elastic properties and morphological evolution 223
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires 223
Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling 210
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 207
Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substrates 204
Continuum modeling of heteroepitaxial growth in semiconductors 204
GaAs/Ge crystals grown on Si substrates patterned down to the micron scale 196
Ge Crystals on Si Show Their Light 194
Continuum modelling of semiconductor heteroepitaxy: an applied perspective 188
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 186
Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars 179
Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals 179
Fine control of plastic and elastic relaxation in Ge/Si vertical heterostructures 178
Fully coherent growth of Ge on free-standing Si(001) nanomesas 172
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 172
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 171
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 168
Enhancing radiative recombination in heteroepitaxial systems: three dimensional Ge-crystals 167
Si CMOS compatible, compliant integration of lattice-mismatched semiconductors on Si(001): Example of fully coherent Ge/Si nanostructures 162
Dislocation assessment and their elimination in high-quality Ge microcrystals integrated on deeply patterned Si (001) substrates 154
Heteroepitaxy in out-of-equilibrium conditions on dense Si-pillar arrays: a new monolithic integration strategy 149
Strain relaxation of GaAs/Ge crystals on patterned Si substrates 147
Morphological Evolution of Pit-Patterned Si(001) Substrates Driven by Surface-Energy Reduction 147
Fully coherent Ge islands growth on Si nano-pillars by selective epitaxy 139
Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns 135
From plastic to elastic stress relaxation in highly mismatched SiGe/Si heterostructures 99
Enhancing elastic stress relaxation in SiGe/Si heterostructures by Si pillar necking 94
Totale 6.990
Categoria #
all - tutte 24.400
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 24.400


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021364 0 0 0 0 0 33 32 55 35 78 36 95
2021/2022350 24 26 27 42 21 29 21 22 16 43 19 60
2022/2023804 76 248 91 90 47 124 2 45 56 2 13 10
2023/2024530 19 23 16 18 72 166 90 19 36 5 12 54
2024/20251.114 63 130 59 46 91 70 22 79 101 185 78 190
2025/20261.375 327 166 217 200 328 137 0 0 0 0 0 0
Totale 6.990