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Mostrati risultati da 1 a 20 di 103
Titolo Tipologia Data di pubblicazione Autori File
Single-Event Upset Characterization of a Shift Register in 16 nm FinFET Technology 01 - Articolo su rivista 2025 D'Aniello, FedericoTettamanti, MarcelloShah, Syed Adeel AliVadalà, ValeriaBaschirotto, Andrea +
A 4 GHz to 6 GHz LNA Design in 12-nm FinFET for Quantum Computing 02 - Intervento a convegno 2025 D'Aniello, FEsposito, CBosi, GDe Matteis, MBaschirotto, AVadalà, V
Empirical Finfet Cryo-Model Oriented to Integrated Circuits Design 02 - Intervento a convegno 2025 Saeed, IBosi, GEsposito, CD'Aniello, FBaschirotto, AVadalà, V +
Development of a physics-based 2DEG analytical and simulation model of AlGaN/GaN HEMT biosensor for biomolecule detection—an algorithmic approach 01 - Articolo su rivista 2024 Vadalà V. +
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber 02 - Intervento a convegno 2024 Bosi G.Vadala Valeria +
Device structural engineering and modelling of emerging III-nitride/β-Ga2O3 nano-HEMT for high-power and THz electronics 01 - Articolo su rivista 2024 Vadalà V. +
Physics-informed neural network assisted automated design of power amplifier by user defined specifications 01 - Articolo su rivista 2024 Vadalà V. +
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers 01 - Articolo su rivista 2024 Vadalà V.Bosi G. +
Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications 01 - Articolo su rivista 2024 Vadalà V. +
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs 02 - Intervento a convegno 2024 Vadala V.Bosi G. +
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past 01 - Articolo su rivista 2024 Vadala V.Bosi G. +
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 01 - Articolo su rivista 2023 Bosi G.Vadalà V. +
A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function 01 - Articolo su rivista 2023 Vadalà Valeria +
GaN HEMT Current-Gain Peak: An Insight into the Effects of the Bias Condition 02 - Intervento a convegno 2023 Vadalà Valeria +
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation 02 - Intervento a convegno 2023 Bosi G.Vadalà V. +
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 01 - Articolo su rivista 2023 Bosi G.Vadalà Valeria +
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT 02 - Intervento a convegno 2023 Vadalà V.Bosi G. +
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition 02 - Intervento a convegno 2023 Vadalà ValeriaBosi G. +
Attractive Features of Butt Coupling between Single/Multi Mode GaAs-VCSELs and SSMF for Green, Low-cost Radio-over-Fiber Systems 02 - Intervento a convegno 2022 Bosi G.Vadalà Valeria +
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis 02 - Intervento a convegno 2022 Vadalà ValeriaBosi G. +
Mostrati risultati da 1 a 20 di 103
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