Sfoglia per Autore
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained
2025 Bertoni, I; Ugolotti, A; Scalise, E; Bergamaschini, R; Miglio, L
Interpretation of the competition between beta and kappa phases with supersaturation in MOVPE growth of Ga2O3 on c-oriented sapphire
2025 Ugolotti, A; Bergamaschini, R; Bertoni, I; Bosi, M; Seravalli, L; Mezzadri, F; Cora, I; Fogarassy, Z; Mazzolini, P; Fornari, R; Miglio, L
Interplay of crystal faceting, wetting interactions and substrate geometry in solid-state dewetting and selective-area growth: a phase-field approach
2024 Radice, E; Miglio, L; Montalenti, F; Bergamaschini, R
Atomistic Mechanisms of dc-hd Phase Transition in Si Nanoindentation
2024 Rovaris, F; Ge, G; Lanzoni, D; Marzegalli, A; Barbisan, L; Tang, X; Miglio, L; Scalise, E; Montalenti, F
Near-Infrared Light Trapping and Avalanche Multiplication in Silicon Epitaxial Microcrystals
2024 Falcone, V; Barzaghi, A; Signorelli, F; Valente, J; Firoozabadi, S; Zucchetti, C; Bergamaschini, R; Ballabio, A; Bottegoni, F; Zappa, F; Montalenti, F; Miglio, L; Volz, K; Paul, D; Biagioni, P; Tosi, A; Isella, G
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition
2024 Ge, G; Rovaris, F; Lanzoni, D; Barbisan, L; Tang, X; Miglio, L; Marzegalli, A; Scalise, E; Montalenti, F
Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate
2024 Bertoni, I; Ugolotti, A; Scalise, E; Miglio, L
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires
2024 Rovaris, F; Peeters, W; Marzegalli, A; Glas, F; Vincent, L; Miglio, L; Bakkers, E; Verheijen, M; Scalise, E
Photonic Properties of Self-Assembled Semiconductor Microstructures
2023 Pedrini, J; Colombo, I; Minazzi, P; Barzaghi, A; Miglio, L; Isella, G; Pezzoli, F
Hexagonal Diamond phase of Si and Ge by nanoindentation
2023 Rovaris, F; Ge, G; Marzegalli, A; Miglio, L; Scalise, E
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect
2023 Miglio, L; Scalise, E; Marzegalli, A; Glas, F
In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe
2023 Schellingerhout, S; Bergamaschini, R; Verheijen, M; Montalenti, F; Miglio, L; Bakkers, E
Continuum modeling of 3D semiconductor epitaxy: thermodynamic and kinetic driving forces behind morphological and compositional evolution
2022 Bergamaschini, R; Montalenti, F; Miglio, L
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect
2022 Miglio, L; Scalise, E; Marzegalli, A; Glas, F
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation
2022 Reichmann, F; Scalise, E; Becker, A; Hofmann, E; Dabrowski, J; Montalenti, F; Miglio, L; Mulazzi, M; Klesse, W; Capellini, G
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy
2022 Vanacore, G; Chrastina, D; Scalise, E; Barbisan, L; Ballabio, A; Mauceri, M; La Via, F; Capitani, G; Crippa, D; Marzegalli, A; Bergamaschini, R; Miglio, L
Modeling the kinetic-driven morphological evolution in the 3D epitaxy of semiconductor micro- and nano-structures
2021 Bergamaschini, R; Albani, M; Montalenti, F; Miglio, L
New approaches and understandings in the growth of cubic silicon carbide
2021 La Via, F; Zimbone, M; Bongiorno, C; La Magna, A; Fisicaro, G; Deretzis, I; Scuderi, V; Calabretta, C; Giannazzo, F; Zielinski, M; Anzalone, R; Mauceri, M; Crippa, D; Scalise, E; Marzegalli, A; Sarikov, A; Miglio, L; Jokubavicius, V; Syvajarvi, M; Yakimova, R; Schuh, P; Scholer, M; Kollmuss, M; Wellmann, P
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting
2021 Bergamaschini, R; Plantenga, R; Albani, M; Scalise, E; Ren, Y; Hauge, H; Kolling, S; Montalenti, F; Bakkers, E; Verheijen, M; Miglio, L
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations
2021 Barbisan, L; Sarikov, A; Marzegalli, A; Montalenti, F; Miglio, L
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