Sfoglia per Autore
Surface and volume energies of α-, β-, and κ-Ga2O3 under epitaxial strain induced by a sapphire substrate
2024 Bertoni, I; Ugolotti, A; Scalise, E; Miglio, L
Silicon phase transitions in nanoindentation: Advanced molecular dynamics simulations with machine learning phase recognition
2024 Ge, G; Rovaris, F; Lanzoni, D; Barbisan, L; Tang, X; Miglio, L; Marzegalli, A; Scalise, E; Montalenti, F
Hexagonal Diamond phase of Si and Ge by nanoindentation
2023 Rovaris, F; Ge, G; Marzegalli, A; Miglio, L; Scalise, E
Photonic Properties of Self-Assembled Semiconductor Microstructures
2023 Pedrini, J; Colombo, I; Minazzi, P; Barzaghi, A; Miglio, L; Isella, G; Pezzoli, F
Defects in hexagonal Si-Ge nanowires: the extended I3 vs a “virtual” point-like defect
2023 Miglio, L; Scalise, E; Marzegalli, A; Glas, F
In-Plane Nanowire Growth of Topological Crystalline Insulator Pb₁₋ₓSnₓTe
2023 Schellingerhout, S; Bergamaschini, R; Verheijen, M; Montalenti, F; Miglio, L; Bakkers, E
Continuum modeling of 3D semiconductor epitaxy: thermodynamic and kinetic driving forces behind morphological and compositional evolution
2022 Bergamaschini, R; Montalenti, F; Miglio, L
Modelling the structural origin of defects in hexagonal Ge nanowires: the extended I3 vs a point-like defect
2022 Miglio, L; Scalise, E; Marzegalli, A; Glas, F
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy
2022 Vanacore, G; Chrastina, D; Scalise, E; Barbisan, L; Ballabio, A; Mauceri, M; La Via, F; Capitani, G; Crippa, D; Marzegalli, A; Bergamaschini, R; Miglio, L
New insights into the electronic states of the Ge(0 0 1) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation
2022 Reichmann, F; Scalise, E; Becker, A; Hofmann, E; Dabrowski, J; Montalenti, F; Miglio, L; Mulazzi, M; Klesse, W; Capellini, G
Modeling the kinetic-driven morphological evolution in the 3D epitaxy of semiconductor micro- and nano-structures
2021 Bergamaschini, R; Albani, M; Montalenti, F; Miglio, L
Morphological evolution and compositional segregation effects in core-shell nanowires
2021 Bergamaschini, R; Scalise, E; Albani, M; Assali, S; Plantenga, R; Koelling, S; Verheijen, M; Bakkers, E; Montalenti, F; Miglio, L
Nature and Shape of Stacking Faults in 3C-SiC by Molecular Dynamics Simulations
2021 Barbisan, L; Sarikov, A; Marzegalli, A; Montalenti, F; Miglio, L
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting
2021 Bergamaschini, R; Plantenga, R; Albani, M; Scalise, E; Ren, Y; Hauge, H; Kolling, S; Montalenti, F; Bakkers, E; Verheijen, M; Miglio, L
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires
2021 Scalise, E; Sarikov, A; Barbisan, L; Marzegalli, A; Migas, D; Montalenti, F; Miglio, L
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale
2021 Hofmann, E; Scalise, E; Montalenti, F; Stock, T; Schofield, S; Capellini, G; Miglio, L; Curson, N; Klesse, W
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars
2021 Agati, M; Boninelli, S; Calabretta, C; Mancarella, F; Mauceri, M; Crippa, D; Albani, M; Bergamaschini, R; Miglio, L; La Via, F
Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations
2021 Sarikov, A; Marzegalli, A; Barbisan, L; Zimbone, M; Bongiorno, C; Mauceri, M; Crippa, D; La Via, F; Miglio, L
Extended defects in 3C-SiC: Stacking faults, threading partial dislocations, and inverted domain boundaries
2021 Zimbone, M; Sarikov, A; Bongiorno, C; Marzegalli, A; Scuderi, V; Calabretta, C; Miglio, L; La Via, F
Author Correction: In-plane selective area InSb–Al nanowire quantum networks (Communications Physics, (2020), 3, 1, (59), 10.1038/s42005-020-0324-4)
2021 Op het Veld, R; Xu, D; Schaller, V; Verheijen, M; Peters, S; Jung, J; Tong, C; Wang, Q; de Moor, M; Hesselmann, B; Vermeulen, K; Bommer, J; Lee, J; Sarikov, A; Pendharkar, M; Marzegalli, A; Koelling, S; Kouwenhoven, L; Miglio, L; Palmstrom, C; Zhang, H; Bakkers, E
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