Sfoglia per Autore
Development of a GaAs Stacked Cells Based on Common-Gate Model Extraction Procedure
2025 Choupan, N; Vadala, V; Bosi, G; Pirola, M; Ramella, C
Rethinking Microwave Power-Bar Characterization
2025 Bosi, G; Raffo, A; Giofre, R; Vadala, V; Manni, F; Marante, R; Cabria, L; De Arriba, F; Colantonio, P; Vannini, G
Characterization Procedure for Effective Evaluation of III-V Compound Semiconductor Technology
2025 Choupan, N; Vadala, V; Bosi, G; Ramella, C; Grassi, M; Crupi, G; Giofre, R; Raffo, A; Vannini, G
Characterization and Modeling of Dual-Input Doherty Power Amplifier for High Efficiency and Bandwidth
2025 Basaglia, G; Zhou, H; Bosi, G; Vadala, V; Raffo, A; Vannini, G; Fager, C
A Straightforward Fitting Strategy Based on the Complex Lorentzian Function to Fully and Systematically Characterize the Kink Effect in the Output Reflection Coefficient of the GaN HEMT Technology
2025 Gugliandolo, G; Crupi, G; Vadala, V; Giofre, R; Raffo, A; Donato, N
Empirical Finfet Cryo-Model Oriented to Integrated Circuits Design
2025 Saeed, I; Bosi, G; Esposito, C; D'Aniello, F; Charbon, E; Baschirotto, A; Vadalà, V
A 4 GHz to 6 GHz LNA Design in 12-nm FinFET for Quantum Computing
2025 D'Aniello, F; Esposito, C; Bosi, G; De Matteis, M; Baschirotto, A; Vadalà, V
Single-Event Upset Characterization of a Shift Register in 16 nm FinFET Technology
2025 D'Aniello, F; Tettamanti, M; Shah, S; Mattiazzo, S; Bonaldo, S; Vadalà, V; Baschirotto, A
A waveform engineering approach for class F operation in a class C biased peaking branch of GaN MMIC Doherty power amplifiers
2025 Manni, F; Colantonio, P; Camarchia, V; Piacibello, A; Bosi, G; Vadalà, V; Giofrè, R
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs
2024 Crupi, G; Vadala, V; Bosi, G; Gugliandolo, G; Bao, X; Giofre, R; Raffo, A; Colantonio, P; Donato, N; Vannini, G
Development of a physics-based 2DEG analytical and simulation model of AlGaN/GaN HEMT biosensor for biomolecule detection—an algorithmic approach
2024 Raghuveera, E; Lenka, T; Rao, G; Vadalà, V; Nguyen, H
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers
2024 Kikuchi, K; Raffo, A; Vadalà, V; Bosi, G; Vannini, G; Yamamoto, H
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber
2024 Nanni, J; Saderi, G; Bellanca, G; Bosi, G; Raffo, A; Vadalà, V; Debernardi, P; Polleux, J; Billabert, A; Esfahani, M; Tartarini, G
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E -Band Amplifier Design: Learning From the Past
2024 Vadala, V; Raffo, A; Colzani, A; Fumagalli, M; Sivverini, G; Bosi, G; Vannini, G
Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications
2024 Rao, G; Lenka, T; Vadalà, V; Nguyen, H
Physics-informed neural network assisted automated design of power amplifier by user defined specifications
2024 Bhargava, G; Kumari, H; Vadalà, V; Majumdar, S; Crupi, G
Device structural engineering and modelling of emerging III-nitride/β-Ga2O3 nano-HEMT for high-power and THz electronics
2024 Rao, G; Lenka, T; Vadalà, V; Nguyen, H
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters
2023 Resca, D; Bosi, G; Biondi, A; Cariani, L; Vadalà, V; Scappaviva, F; Raffo, A; Vannini, G
A Systematic and Numerical Methodology for GaN HEMT Current-Gain Peak Analysis Using the Complex Lorentzian Function
2023 Gugliandolo, G; Crupi, G; Vadalà, V; Raffo, A; Donato, N; Vannini, G
GaN HEMT Current-Gain Peak: An Insight into the Effects of the Bias Condition
2023 Gugliandolo, G; Crupi, G; Marinkovic, Z; Vadalà, V; Raffo, A; Donato, N; Vannini, G
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