Sfoglia per Autore
Silicon nanowires: Donors, surfaces and interface defects
2016 Fanciulli, M; Paleari, S; Belli, M; Lamperti, A
Electron spin relaxation and coherence in silicon
2016 Fanciulli, M
Electrically Detected Conduction Electron Spin Resonance in Bulk Germanium and Germanium Quantum Wells
2016 Paleari, S; Giorgioni, A; Cecchi, S; Grilli, E; Isella, G; Jantsch, W; Pezzoli, F; Fanciulli, M
MOCVD growth and structural characterization of In-Sb-Te nanowires
2016 Selmo, S; Cecchi, S; Cecchini, R; Wiemer, C; Fanciulli, M; Rotunno, E; Lazzarini, L; Longo, M
Silicon nanowires: Donors, surfaces and interface defects
2016 Fanciulli, M; Paleari, S; Belli, M; Lamperti, A
Defects and dopants in silicon nanowires produced by metal-assisted chemical etching
2016 Fanciulli, M; Belli, M; Paleari, S; Lamperti, A; Sironi, M; Pizio, A
Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires
2016 Selmo, S; Cecchini, R; Cecchi, S; Wiemer, C; Fanciulli, M; Rotunno, E; Lazzarini, L; Rigato, M; Pogany, D; Lugstein, A; Longo, M
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells
2016 Giorgioni, A; Paleari, S; Cecchi, S; Vitiello, E; Grilli, E; Isella, G; Jantsch, W; Fanciulli, M; Pezzoli, F
Negative-U trapping centers evidenced by admittance spectroscopy at the Ge/GeO2 interface
2015 Paleari, S; Molle, A; Lamperti, A; Fanciulli, M
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells
2015 Giorgioni, A; Paleari, S; Cecchi, S; Grilli, E; Isella, G; Jantsch, W; Fanciulli, M; Pezzoli, F
Defects and Dopants in Silicon and Germanium Nanowires
2015 Fanciulli, M; Belli, M; Paleari, S; Lamperti, A; Molle, A; Sironi, M; Pizio, A
Defects and Dopants in Silicon and Germanium Nanowires
2015 Fanciulli, M; Belli, M; Paleari, S; Lamperti, A; Molle, A; Sironi, M; Pizio, A
Analysis of hyperfine structure in chalcogen-doped silicon and germanium nanowires
2015 Petretto, G; Masse, A; Fanciulli, M; Debernardi, A
Valley blockade and multielectron spin-valley Kondo effect in silicon
2015 Crippa, A; Tagliaferri, M; Rotta, D; De Michielis, M; Mazzeo, G; Fanciulli, M; Wacquez, R; Vinet, M; Prati, E
Silicene field-effect transistors operating at room temperature
2015 Tao, L; Cinquanta, E; Chiappe, D; Grazianetti, C; Fanciulli, M; Dubey, M; Molle, A; Akinwande, D
Effective Hamiltonian for two interacting double-dot exchange-only qubits and their controlled-NOT operations
2015 Ferraro, E; De Michielis, M; Fanciulli, M; Prati, E
Influence of doping elements on the formation rate of silicon nanowires by silver-assisted chemical etching
2015 Canevali, C; Alia, M; Fanciulli, M; Longo, M; Ruffo, R; Mari, C
Effect on Al:MO2/In0.53Ga0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition
2014 Lamperti, A; Molle, A; Cianci, E; Wiemer, C; Spiga, S; Fanciulli, M
Spin-dependent recombination and single charge dynamics in silicon nanostructrures
2014 Rotta, D; Vellei, A; Mazzeo, G; Belli, M; Cocco, S; Tagliaferri, M; Crippa, A; Prati, E; Fanciulli, M
Theoretical aspects of graphene-like group IV semiconductors
2014 Houssa, M; van den Broek, B; Scalise, E; Ealet, B; Pourtois, G; Chiappe, D; Cinquanta, E; Grazianetti, C; Fanciulli, M; Molle, A; Afanas'Ev, V; Stesmans, A
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