In the present work we focus on the investigation by electron spin resonance (EPR) and complementary techniques (such as SEM, ToF-SIMS, XPS) of silicon nanowires produced by metal-assisted chemical etching (MACE). In particular we will report on the impact of the MACE process on the donors (P and As) and on surface passivation processes based on H or S. The efficiency of the passivation processes has been monitored by following the EPR signals of the Pb centers at the Si/SiO2 interface.

Fanciulli, M., Paleari, S., Belli, M., Lamperti, A. (2016). Silicon nanowires: Donors, surfaces and interface defects. Intervento presentato a: Symposium on High Purity and High Mobility Semiconductors 14 - PRiME 2016/230th ECS Meeting - 2 October 2016 through 7 October 2016, Honolulu, USA.

Silicon nanowires: Donors, surfaces and interface defects

Fanciulli, M;Paleari, S;
2016

Abstract

In the present work we focus on the investigation by electron spin resonance (EPR) and complementary techniques (such as SEM, ToF-SIMS, XPS) of silicon nanowires produced by metal-assisted chemical etching (MACE). In particular we will report on the impact of the MACE process on the donors (P and As) and on surface passivation processes based on H or S. The efficiency of the passivation processes has been monitored by following the EPR signals of the Pb centers at the Si/SiO2 interface.
paper
Silicon Nanowires, Defects, Dopants, Interfaces
English
Symposium on High Purity and High Mobility Semiconductors 14 - PRiME 2016/230th ECS Meeting - 2 October 2016 through 7 October 2016
2016
2016
none
Fanciulli, M., Paleari, S., Belli, M., Lamperti, A. (2016). Silicon nanowires: Donors, surfaces and interface defects. Intervento presentato a: Symposium on High Purity and High Mobility Semiconductors 14 - PRiME 2016/230th ECS Meeting - 2 October 2016 through 7 October 2016, Honolulu, USA.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/197720
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