FANCIULLI, MARCO
FANCIULLI, MARCO
DIPARTIMENTO DI SCIENZA DEI MATERIALI
Self-organized layered structure in epitaxially stabilized FeSi
1997 Fanciulli, M; Weyer, G; Chevallier, J; Vonkanel, H; Deller, H; Onda, N; Miglio, L; Tavazza, F; Celino, M
Microscopic environment of Fe in epitaxially stabilized c-FeSi
1999 Fanciulli, M; Weyer, G; Svane, A; Christensen, N; von Kanel, H; Muller, E; Onda, N; Miglio, L; Tavazza, F; Celino, M
EPR and UV-Raman study of BPSG thin films: structure and defects
2001 Fanciulli, M; Bonera, E; Carollo, E; Zanotti, L
Stress mapping in silicon: Advantages of using a Raman spectrometer with a single dispersive stage
2002 Bonera, E; Fanciulli, M; Batchelder, D
Luminescence from beta-FeSi2 precipitates in Si. I. Morphology and epitaxial relationship
2002 Grimaldi, M; Bongiorno, C; Spinella, C; Grilli, E; Martinelli, L; Gemelli, M; Migas, D; Miglio, L; Fanciulli, M
Raman spectroscopy for a micrometric and tensorial analysis of stress in silicon
2002 Bonera, E; Fanciulli, M; Batchelder, D
Time of flight secondary ion mass spectrometry study of silicon nanoclusters embedded in thin silicon oxide layers
2003 Perego, M; Ferrari, S; Spiga, S; Bonera, E; Fanciulli, M; Soncini, V
Combining high resolution and tensorial analysis in Raman stress measurements of silicon
2003 Bonera, E; Fanciulli, M; Batchelder, D
Structure evolution of atomic layer deposition grown ZrO2 films by deep-ultra-violet Raman and far-infrared spectroscopies
2003 Bonera, E; Scarel, G; Fanciulli, M
Effects of annealing temperature and surface preparation on the formation of cobalt silicide interconnects
2003 Wiemer, C; Tallarida, G; Bonera, E; Ricci, E; Fanciulli, M; Mastracchio, G; Pavia, G; Marangon, S
Crystal and molecular structure of [(eta(5)-C5H4SiMe3)(2)LuCl](2): A precursor for the production of Lu2O3 films
2004 Schumann, H; Fedushkin, I; Hummert, M; Scarel, G; Bonera, E; Fanciulli, M
Atomic-layer deposition of Lu2O3
2004 Scarel, G; Bonera, E; Wiemer, C; Tallarida, G; Spiga, S; Fanciulli, M; Fedushkin, I; Schumann, H; Lebedinskii, Y; Zenkevich, A
Energy-band diagram of metal/Lu2O3/silicon structures
2004 Seguini, G; Bonera, E; Spiga, S; Scarel, G; Fanciulli, M
Raman spectroscopy of strain in subwavelength microelectronic devices
2005 Bonera, E; Fanciulli, M; Mariani, M
Resonant Raman microscopy of stress in silicon-based microelectronics
2005 Bonera, E; Fanciulli, M
Dielectric properties of high-kappa oxides: Theory and experiment for Lu-2O-3
2005 Bonera, E; Scarel, G; Fanciulli, M; Delugas, P; Fiorentini, V
Band alignment at the La2Hf2O7/(001)Si interface
2006 Seguini, G; Spiga, S; Bonera, E; Fanciulli, M; Huamantinco, A; Forst, C; Ashman, C; Blochl, P; Dimoulas, A; Mavrou, G
Atomic layer deposition of Lu silicate films using {[(Me3Si)(2)N](3)Lu}
2006 Scarel, G; Wiemer, C; Tallarida, G; Spiga, S; Seguini, G; Bonera, E; Fanciulli, M; Lebedinskii, Y; Zenkevich, A; Pavia, G; Fedushkin, I; Fukin, G; Domrachev, G
Raman stress maps from finite-element models of silicon structures
2006 Bonera, E; Fanciulli, M; Carnevale, G
Phosphorous-oxygen hole centers in phosphosilicate glass films
2006 Fanciulli, M; Bonera, E; Nokhrin, S; Pacchioni, G