In recent years, research on hyperdoped semiconductors has accelerated, displaying dopant concentrations far exceeding solubility limits to surpass the limitations of conventionally doped materials. Nitrogen defects in silicon have been extensively investigated for their unique characteristics compared to other pnictogen dopants. However, previous practical investigations have encountered challenges in achieving high nitrogen defect concentrations due to the low solubility and diffusivity of nitrogen in silicon, and the necessary non-equilibrium techniques, such as ion implantation, resulting in crystal damage and amorphisation. In this study, we present a single-step technique called high-pressure gas immersion excimer laser doping (HP-GIELD) to manufacture nitrogen-hyperdoped silicon. Our approach offers ultrafast processing, scalability, high control, and reproducibility. Employing HP-GIELD, we achieved nitrogen concentrations exceeding 6 at% (3.01 x 10(21) at/cm(3)) in intrinsic silicon. Notably, nitrogen concentration remained above the liquid solubility limit to similar to 1 mu m in depth. HP-GIELD's high-pressure environment effectively suppressed physical surface damage and the generation of silicon dangling bonds, while the well-known effects of pulsed laser annealing (PLA) preserved crystallinity. Additionally, we conducted a theoretical analysis of light-matter interactions and thermal effects governing nitrogen diffusion during HP-GIELD, which provided insights into the doping mechanism. Leveraging excimer lasers, our method is well-suited for integration into high-volume semiconductor manufacturing, particularly front-end-of-line processes.

Barkby, J., Moro, F., Perego, M., Taglietti, F., Lidorikis, E., Kalfagiannis, N., et al. (2024). Fabrication of nitrogen-hyperdoped silicon by high-pressure gas immersion excimer laser doping. SCIENTIFIC REPORTS, 14(1) [10.1038/s41598-024-69552-8].

Fabrication of nitrogen-hyperdoped silicon by high-pressure gas immersion excimer laser doping

Taglietti F.;Fanciulli M.
2024

Abstract

In recent years, research on hyperdoped semiconductors has accelerated, displaying dopant concentrations far exceeding solubility limits to surpass the limitations of conventionally doped materials. Nitrogen defects in silicon have been extensively investigated for their unique characteristics compared to other pnictogen dopants. However, previous practical investigations have encountered challenges in achieving high nitrogen defect concentrations due to the low solubility and diffusivity of nitrogen in silicon, and the necessary non-equilibrium techniques, such as ion implantation, resulting in crystal damage and amorphisation. In this study, we present a single-step technique called high-pressure gas immersion excimer laser doping (HP-GIELD) to manufacture nitrogen-hyperdoped silicon. Our approach offers ultrafast processing, scalability, high control, and reproducibility. Employing HP-GIELD, we achieved nitrogen concentrations exceeding 6 at% (3.01 x 10(21) at/cm(3)) in intrinsic silicon. Notably, nitrogen concentration remained above the liquid solubility limit to similar to 1 mu m in depth. HP-GIELD's high-pressure environment effectively suppressed physical surface damage and the generation of silicon dangling bonds, while the well-known effects of pulsed laser annealing (PLA) preserved crystallinity. Additionally, we conducted a theoretical analysis of light-matter interactions and thermal effects governing nitrogen diffusion during HP-GIELD, which provided insights into the doping mechanism. Leveraging excimer lasers, our method is well-suited for integration into high-volume semiconductor manufacturing, particularly front-end-of-line processes.
Articolo in rivista - Articolo scientifico
Nitrogen, Silicon, Doping, Laser processing
English
23-ago-2024
2024
14
1
19640
open
Barkby, J., Moro, F., Perego, M., Taglietti, F., Lidorikis, E., Kalfagiannis, N., et al. (2024). Fabrication of nitrogen-hyperdoped silicon by high-pressure gas immersion excimer laser doping. SCIENTIFIC REPORTS, 14(1) [10.1038/s41598-024-69552-8].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/536202
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