Sfoglia per Autore
Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures
2017 Mio, A; Privitera, S; Bragaglia, V; Arciprete, F; Cecchi, S; Litrico, G; Persch, C; Calarco, R; Rimini, E
Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys
2017 Zallo, E; Cecchi, S; Boschker, J; Mio, A; Arciprete, F; Privitera, S; Calarco, R
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells
2016 Giorgioni, A; Paleari, S; Cecchi, S; Golub, L; Grilli, E; Isella, G; Jantsch, W; Fanciulli, M; Pezzoli, F
Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires
2016 Selmo, S; Cecchini, R; Cecchi, S; Wiemer, C; Fanciulli, M; Rotunno, E; Lazzarini, L; Rigato, M; Pogany, D; Lugstein, A; Longo, M
Electrically Detected Conduction Electron Spin Resonance in Bulk Germanium and Germanium Quantum Wells
2016 Paleari, S; Giorgioni, A; Cecchi, S; Grilli, E; Isella, G; Jantsch, W; Pezzoli, F; Fanciulli, M
MOCVD growth and structural characterization of In-Sb-Te nanowires
2016 Selmo, S; Cecchi, S; Cecchini, R; Wiemer, C; Fanciulli, M; Rotunno, E; Lazzarini, L; Longo, M
Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials
2016 Bragaglia, V; Arciprete, F; Zhang, W; Mio, A; Zallo, E; Perumal, K; Giussani, A; Cecchi, S; Boschker, J; Riechert, H; Privitera, S; Rimini, E; Mazzarello, R; Calarco, R
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells
2016 Giorgioni, A; Paleari, S; Cecchi, S; Vitiello, E; Grilli, E; Isella, G; Jantsch, W; Fanciulli, M; Pezzoli, F
Structural investigations of the α12 Si-Ge superstructure
2015 Etzelstorfer, T; Ahmadpor Monazam, M; Cecchi, S; Kriegner, D; Chrastina, D; Gatti, E; Grilli, E; Rosemann, N; Chatterjee, S; Holý, V; Pezzoli, F; Isella, G; Stangl, J
Electron Spin Resonance of conduction electrons in Ge/SiGe quantum wells
2015 Giorgioni, A; Paleari, S; Cecchi, S; Grilli, E; Isella, G; Jantsch, W; Fanciulli, M; Pezzoli, F
Thin SiGe virtual substrates for Ge heterostructures integration on silicon
2014 Cecchi, S; Gatti, E; Chrastina, D; Frigerio, J; Müller Gubler, E; Paul, D; Guzzi, M; Isella, G
Thermal transport through short-period SiGe nanodot superlattices
2014 Chen, P; Zhang, J; Feser, J; Pezzoli, F; Moutanabbir, O; Cecchi, S; Isella, G; Gemming, T; Baunack, S; Chen, G; Schmidt, O; Rastelli, A
Strain release management in SiGe/Si films by substrate patterning
2014 Mondiali, V; Bollani, M; Chrastina, D; Rubert, R; Chahine, G; Richard, M; Cecchi, S; Gagliano, L; Bonera, E; Schülli, T; Miglio, L
Dephasing in Ge/SiGe quantum wells measured by means of coherent oscillations
2013 Kolata, K; Köster, N; Chernikov, A; Drexler, M; Gatti, E; Cecchi, S; Chrastina, D; Isella, G; Guzzi, M; Chatterjee, S
Holes in Germanium Quantum Wells: Spin Relaxation and Temperature Dynamics
2013 Kolata, K; Köster, N; Woscholski, R; Imhof, S; Thränhardt, A; Lange, C; Sipe, J; Pezzoli, F; Cecchi, S; Chrastina, D; Isella, G; Chatterjee, S
Dephasing in Ge/SiGe quantum wells by means of coherent oscillations
2013 Kolata, K; Köster, N; Chernikov, A; Gatti, E; Drexler, M; Cecchi, S; Chrastina, D; Isella, G; Guzzi, M; Chatterjee, S
Tailoring the spin polarization in Ge/SiGe multiple quantum wells
2013 Giorgioni, A; Pezzoli, F; Gatti, E; Bottegoni, F; Cecchi, S; Trivedi, D; Li, P; Song, Y; Grilli, E; Ciccacci, F; Isella, G; Dery, H; Guzzi, M
Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells
2013 Giorgioni, A; Pezzoli, F; Gatti, E; Cecchi, S; Inoki, C; Deneke, C; Grilli, E; Isella, G; Guzzi, M
Holes in germanium quantum wells: spin relaxation and temperature dynamics
2013 Kolata, K; Köster, N; Woscholski, R; Imhof, S; Thränhardt, A; Lange, C; Sipe, J; Pezzoli, F; Cecchi, S; Chrastina, D; Isella, G; Chatterjee, S
Optical spin injection and spin lifetime in Ge heterostructures
2012 Pezzoli, F; Bottegoni, F; Trivedi, D; Ciccacci, F; Giorgioni, A; Li, P; Cecchi, S; Grilli, E; Song, Y; Guzzi, M; Dery, H; Isella, G
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