Sfoglia per Autore
Electronic Properties of Perfect Dislocations in Germanium: A First-Principles Study
2025 Regazzoni, V; Rovaris, F; Marzegalli, A; Montalenti, F; Scalise, E
Dopant interactions with I3-basal stacking faults in hexagonal silicon: first-principles insights into fundamental mechanisms.
2025 Muchiri, P; Túnica, M; Zobelli, A; Marzegalli, A; Scalise, E; Amato, M
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation
2025 Bikerouin, M; Marzegalli, A; Spirito, D; Schaffar, G; Bongiorno, C; Rovaris, F; Zaghloul, M; Corley-Wiciak, A; Miglio, L; Maier-Kiener, V; Capellini, G; Mio, A; Scalise, E
Interaction of Dopants with the I3-Type Basal Stacking Fault in Hexagonal-Diamond Si
2025 Túnica, M; Muchiri, P; Zobelli, A; Marzegalli, A; Scalise, E; Amato, M
Towards Hexagonal Germanium via Nanoindentation
2025 Marzegalli, A; Scalise, E; Bikerouin, M; Rovaris, F; Fantasia, A; Montalenti, F; Miglio, L; Mio, A; Bongiorno, C; Zaghloul, M; Maier-Kiener, V; Schaffar, G; Spirito, J; Corley-Wiciak, A; Capellini, G
Pressure-dependent kinetics of phase transitions in Si and Ge using machine learning interatomic potentials
2025 Rovaris, F; Fantasia, A; Lanzoni, D; Marzegalli, A; Montalenti, F; Scalise, E
Planar Hexagonal Germanium Grown on Cadmium Sulfide Substrate by Low-Energy Plasma-Enhanced Chemical Vapor Deposition.
2025 Besana, A; Bonera, E; Chrastina, D; Zaghloul, M; Freddi, S; Bollani, M; Marzegalli, A; Mio, A; Scalise, E; Giovanni Isella, A
Unraveling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon and Germanium
2025 Rovaris, F; Fantasia, A; Marzegalli, A; Montalenti, F; Scalise, E
Origin and Evolution of I3 defects in Hexagonal Silicon and Germanium
2025 Rovaris, F; Dellevoet, J; Marzegalli, A; Schouten, M; Fantasia, A; Tse, O; Baumeier, B; Verheijen, M; Montalenti, F; Miglio, L; Bakkers, E; Scalise, E
TEM analysis of Textured Silicon Polymorph Crystals obtained via Nanoindentation and Annealing
2025 Mio, A; Bongiorno, C; Zaghloul, M; Bikerouin, M; Marzegalli, A; Spirito, D; Schaffar, G; Anna Corley-Wiciak, A; Rovaris, F; Miglio, L; Maier Kiener, V; Capellini, G; Scalise, E
Electronic Properties of Extended Defects in Germanium: A First-Principles Study
2025 Regazzoni, V; Scalise, E; Marzegalli, A; Montalenti, F
Electronic and optical properties of stacking faults in hexagonal germanium.
2025 Broderick, C; Bikerouin, M; Marzegalli, A; Van De Walle, C; Scalise, E
Electronic Properties of Extended Defects in Germanium: A First-Principles Study
2025 Regazzoni, V; Scalise, E; Marzegalli, A; Rovaris, F; Montalenti, F
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation
2025 Bikerouin, M; Marzegalli, A; Rovaris, F; Bongiorno, C; Zaghloul, M; Schaffar, G; Spirito, D; Anna Corley-Wiciak, A; Miglio, L; Capellini, G; Maier-Kiener, V; Mio, A; Scalise, E
Unraveling the atomic-scale pathways driving pressure-induced phase transitions in silicon
2025 Rovaris, F; Marzegalli, A; Montalenti, F; Scalise, E
The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale
2024 Corley-Wiciak, C; Zöllner, M; Corley-Wiciak, A; Rovaris, F; Sfruncia, G; Nicotra, G; Zaitsev, I; Manganelli, C; Zatterin, E; Spirito, D; Marzegalli, A; Schulli, T; Von Den Driesch, N; Buca, D; Montalenti, F; Richter, C; Capellini, G
Unravelling Atomistic Mechanisms of Pressure-Induced Phase Transitions in Silicon Nanoindentation
2024 Rovaris, F; Marzegalli, A; Lanzoni, D; Fantasia, A; Ge, G; Montalenti, F; Scalise, E
2H-Si/Ge for Group-IV Photonics: on the Origin of Extended Defects in Core-Shell Nanowires
2024 Rovaris, F; Peeters, W; Marzegalli, A; Glas, F; Vincent, L; Miglio, L; Bakkers, E; Verheijen, M; Scalise, E
Polytypic quantum wells in Si and Ge: impact of 2D hexagonal inclusions on electronic band structure
2024 Marzegalli, A; Montalenti, F; Scalise, E
Results and challenges in obtaining the hexagonal diamond Si phase by nanoindentation
2024 Marzegalli, A; Mio, A; Spirito, D; Rovaris, F; Bikerouin, M; Shaffar, G; Meier, V; Capellini, G; Scalise, E
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