InP-based membrane couplers for optical interconnects on Si
2009 Binetti, P; Orobtchouk, R; Leijtens, X; Han, B; De Vries, T; Oei, Y; Di Cioccio, L; Fedeli, J; Lagahe, C; Van Veldhoven, P; Notzel, R; Smit, M
InAs/InP quantum dots, dashes, and ordered arrays
2009 Sritirawisarn, N; Notzel, R
Intercettazioni a ‘‘strascico’’: prospettive interpretative
2021 Schiavone, S
Impact of base size and shape on formation control of multifaceted InP nanopyramids by selective area metal organic vapor phase epitaxy
2009 Yuan, J; Wang, H; Van Veldhoven, P; Notzel, R
Formation of stacked linear InAs quantum dot arrays on InGaAsP/InP(100) by self-organized anisotropic strain engineering
2009 Sritirawisarn, N; van Otten, F; Eijkemans, T; Notzel, R
Formation of linear InAs/InGaAsP/InP (1 0 0) quantum dot arrays by self-organized anisotropic strain engineering in chemical beam epitaxy
2009 Sritirawisarn, N; van Otten, F; Eijkemans, T; Notzel, R
Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on artificially patterned GaAs (3 1 1)B substrates
2009 Selcuk, E; Hamhuis, G; Notzel, R
Distribution control of 1.55 μm InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy
2009 Wang, H; Yuan, J; Rieger, T; Van Veldhoven, P; Nouwens, P; Eijkemans, T; De Vries, T; Smalbrugge, B; Geluk, E; Notzel, R
Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 μm
2009 Heck, M; Salumbides, E; Renault, A; Bente, E; Oei, Y; Smit, M; Van Veldhoven, R; Notzel, R; Eikema, K; Ubachs, W
Birefringence-induced mode-dependent tuning of liquid crystal infiltrated InGaAsP photonic crystal nanocavities
2009 Dundar, M; Kicken, H; Silov, A; Notzel, R; Karouta, F; Salemink, H; Van Der Heijden, R
Wavelength tuning of planar photonic crystals by local processing of individual holes
2009 Kicken, H; Alkemade, P; Van Der Heijden, R; Karouta, F; Notzel, R; Van Der Drift, E; Salemink, H
Wavelength-sized cavities in high aspect InP/InGaAsP/InP photonic crystals
2009 Kicken, H; Barbu, I; Van Der Heijden, R; Karouta, F; Notzel, R; Van Der Drift, E; Salemink, H
Wavelength-sized, tunable nanocavity in deeply etched InP/InGaAsP/InP photonic crystals
2009 Kicken, H; Barbu, I; Van Der Heijden, R; Karouta, F; Notzel, R; Van Der Drift, E; Salemink, H
First demonstration of single-layer InAs/InP (100) quantum-dot laser: Continuous wave, room temperature, ground state
2009 Kotani, J; Van Veldhoven, P; De Vries, T; Smalbrugge, B; Bente, E; Smit, M; Notzel, R
Low-footprint optical interconnect on an SOI chip through heterogeneous integration of InP-based microdisk lasers and microdetectors
2009 Van Campenhout, J; Binetti, P; Romeo, P; Regreny, P; Seassal, C; Leijtens, X; De Vries, T; Oei, Y; Van Veldhoven, R; Notzel, R; Di Cioccio, L; Fedeli, J; Smit, M; Van Thourhout, D; Baets, R
Low density 1.55 μm InAs/InGaAsP/InP (100) quantum dots enabled by an ultrathin GaAs interlayer
2009 Van Veldhoven, P; Chauvin, N; Fiore, A; Notzel, R
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2009 Dundar, M; Bordas, F; Eijkemans, T; Chauvin, N; Silov, A; Notzel, R; Karouta, F; Fiore, A; Van Der Heijden, R
Lasing in metal-insulator-metal sub-wavelength plasmonic waveguides
2009 Hill, M; Marell, M; Leong, E; Smalbrugge, B; Zhu, Y; Sun, M; Van Veldhoven, P; Geluk, E; Karouta, F; Oei, Y; Notzel, R; Ning, C; Smit, M
Integrated 2×2 quantum dot optical crossbar switch in 1.55m wavelength range
2009 Albores-Mejia, A; Williams, K; De Vries, T; Smalbrugge, E; Oei, Y; Smit, M; Notzel, R
Monolithic AWG-based discretely tunable laser diode with nanosecond switching speed
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