Self-organized anisotropic strain engineering is combined with growth on artificially patterned GaAs (3 1 1)B substrates to realize complex lateral ordering of InGaAs and InAs quantum dots (QDs) guided by steps and facets generated along the pattern sidewalls. Depending on the pattern design, size, and depth (shallow or deep) the natural spotlike arrangement of the QD arrays and groups is transformed into distinct stripes of multiple and single QDs which are ordered over macroscopic areas. Micro-photoluminescence reveals clear influence of the QD ordering on the optical properties. Distinct emission lines are observed from uncapped single QDs. © 2009 Elsevier Ltd. All rights reserved.
Selcuk, E., Hamhuis, G., Notzel, R. (2009). Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on artificially patterned GaAs (3 1 1)B substrates. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 12(1-2), 40-43 [10.1016/j.mssp.2009.07.008].
Complex laterally ordered InGaAs and InAs quantum dots by guided self-organized anisotropic strain engineering on artificially patterned GaAs (3 1 1)B substrates
Notzel R.
2009
Abstract
Self-organized anisotropic strain engineering is combined with growth on artificially patterned GaAs (3 1 1)B substrates to realize complex lateral ordering of InGaAs and InAs quantum dots (QDs) guided by steps and facets generated along the pattern sidewalls. Depending on the pattern design, size, and depth (shallow or deep) the natural spotlike arrangement of the QD arrays and groups is transformed into distinct stripes of multiple and single QDs which are ordered over macroscopic areas. Micro-photoluminescence reveals clear influence of the QD ordering on the optical properties. Distinct emission lines are observed from uncapped single QDs. © 2009 Elsevier Ltd. All rights reserved.
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