The authors report the formation of low density InAs/InGaAsP/InP (100) quantum dots (QDs) by metalorganic vapor phase epitaxy enabled by an ultrathin GaAs interlayer. For small InAs amount and low group-V flow rate, the QD density is reduced to below 10 QDs/μ m2. Increasing the group-V flow rate slightly increases the QD density and shifts the QD emission wavelength into the 1.55 μm telecommunication region. Without GaAs interlayer, the QD density is drastically increased. This is attributed to the suppression of As/P exchange during QD growth by the GaAs interlayer avoiding the formation of excess InAs. © 2009 American Institute of Physics.
Van Veldhoven, P., Chauvin, N., Fiore, A., Notzel, R. (2009). Low density 1.55 μm InAs/InGaAsP/InP (100) quantum dots enabled by an ultrathin GaAs interlayer. APPLIED PHYSICS LETTERS, 95(11) [10.1063/1.3230496].
Low density 1.55 μm InAs/InGaAsP/InP (100) quantum dots enabled by an ultrathin GaAs interlayer
Notzel R.
2009
Abstract
The authors report the formation of low density InAs/InGaAsP/InP (100) quantum dots (QDs) by metalorganic vapor phase epitaxy enabled by an ultrathin GaAs interlayer. For small InAs amount and low group-V flow rate, the QD density is reduced to below 10 QDs/μ m2. Increasing the group-V flow rate slightly increases the QD density and shifts the QD emission wavelength into the 1.55 μm telecommunication region. Without GaAs interlayer, the QD density is drastically increased. This is attributed to the suppression of As/P exchange during QD growth by the GaAs interlayer avoiding the formation of excess InAs. © 2009 American Institute of Physics.
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