We have previously demonstrated the formation of linear InAs quantum dot (QD) arrays based on self-organized anisotropic strain engineering of InAs/InGaAsP superlattice (SL) templates on InP(100) by chemical beam epitaxy (CBE). The important step forward is the vertical stacking of the QD arrays with identical emission wavelength, realizing a three-dimensionally self-ordered QD crystal. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Sritirawisarn, N., van Otten, F., Eijkemans, T., Notzel, R. (2009). Formation of stacked linear InAs quantum dot arrays on InGaAsP/InP(100) by self-organized anisotropic strain engineering. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 246(4), 858-860 [10.1002/pssb.200880650].
Formation of stacked linear InAs quantum dot arrays on InGaAsP/InP(100) by self-organized anisotropic strain engineering
Notzel R.
2009
Abstract
We have previously demonstrated the formation of linear InAs quantum dot (QD) arrays based on self-organized anisotropic strain engineering of InAs/InGaAsP superlattice (SL) templates on InP(100) by chemical beam epitaxy (CBE). The important step forward is the vertical stacking of the QD arrays with identical emission wavelength, realizing a three-dimensionally self-ordered QD crystal. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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