Distribution control of InAs quantum dots (QDs) on truncated InP pyramids by selective area growth is reported. The top surface of the pyramids is composed of a (100) facet and high-index facets aside. The arrangement of the facets is governed by the shape of the pyramid base and top surface area. The QDs preferentially nucleate on the high-index facets determining position and distribution. The QD number is reduced with shrinking top surface size. Positioning of four, three, two, and single QDs is realized depending on the top surface's shape and size. Emission from single QDs is observed at 1.55 μm. © 2009 American Institute of Physics.
Wang, H., Yuan, J., Rieger, T., Van Veldhoven, P., Nouwens, P., Eijkemans, T., et al. (2009). Distribution control of 1.55 μm InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy. APPLIED PHYSICS LETTERS, 94(14) [10.1063/1.3116146].
Distribution control of 1.55 μm InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy
Notzel R.
2009
Abstract
Distribution control of InAs quantum dots (QDs) on truncated InP pyramids by selective area growth is reported. The top surface of the pyramids is composed of a (100) facet and high-index facets aside. The arrangement of the facets is governed by the shape of the pyramid base and top surface area. The QDs preferentially nucleate on the high-index facets determining position and distribution. The QD number is reduced with shrinking top surface size. Positioning of four, three, two, and single QDs is realized depending on the top surface's shape and size. Emission from single QDs is observed at 1.55 μm. © 2009 American Institute of Physics.
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