statistiche ricercatore

Continente	#
NA - Nord America	1.582
AS - Asia	721
EU - Europa	654
SA - Sud America	113
AF - Africa	13
Continente sconosciuto - Info sul continente non disponibili	2
Totale	3.085

Nazione	#
US - Stati Uniti d'America	1.552
CN - Cina	226
SG - Singapore	216
IT - Italia	125
DE - Germania	120
RU - Federazione Russa	102
BR - Brasile	91
HK - Hong Kong	84
VN - Vietnam	62
IE - Irlanda	60
SE - Svezia	55
GB - Regno Unito	45
IN - India	41
JP - Giappone	32
AT - Austria	31
UA - Ucraina	30
CA - Canada	25
FI - Finlandia	23
FR - Francia	17
TR - Turchia	16
DK - Danimarca	12
AR - Argentina	8
IQ - Iraq	8
ID - Indonesia	7
BE - Belgio	6
CH - Svizzera	6
KR - Corea	6
EC - Ecuador	5
PL - Polonia	5
BD - Bangladesh	4
ES - Italia	4
IL - Israele	4
NL - Olanda	4
ZA - Sudafrica	4
CL - Cile	3
MX - Messico	3
PY - Paraguay	3
TN - Tunisia	3
UZ - Uzbekistan	3
AZ - Azerbaigian	2
BY - Bielorussia	2
ET - Etiopia	2
EU - Europa	2
LT - Lituania	2
PK - Pakistan	2
TW - Taiwan	2
VE - Venezuela	2
AE - Emirati Arabi Uniti	1
AL - Albania	1
CO - Colombia	1
EG - Egitto	1
HN - Honduras	1
HU - Ungheria	1
IR - Iran	1
KE - Kenya	1
KG - Kirghizistan	1
KZ - Kazakistan	1
LU - Lussemburgo	1
LV - Lettonia	1
MA - Marocco	1
NP - Nepal	1
SA - Arabia Saudita	1
SK - Slovacchia (Repubblica Slovacca)	1
SN - Senegal	1
TT - Trinidad e Tobago	1
Totale	3.085

Nome	#
OPTIMIZATION STEPS OF GERMANIUM AS LIGHT EMITTER: STRAIN AND N-TYPE DOPING	297
Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures	247
Strain Engineering in Highly Mismatched SiGe/Si Heterostructures	243
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures	241
Tensile strain in Ge membranes induced by SiGe nanostressors	238
Photoluminescence of phosphorous doped Ge on Si (100)	235
SiGe nano-stressors for Ge strain-engineering	231
Micro and nanofabrication of SiGe/Ge bridges and membranes by wet-anisotropic etching	214
Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures.	209
SiGe nanostructures inducing tensile strain in suspended germanium membranes.	199
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence	191
Strain in Si or Ge from the Edge Forces of Epitaxial Nanostructures	186
Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals	178
Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)	174
Oxidation as Key Mechanism for Efficient Interface Passivation in Cu (In,Ga)Se2 Thin-Film Solar Cells	85
Totale	3.168

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	144	0	0	0	0	0	7	22	24	19	24	14	34
2021/2022	120	8	10	6	8	4	10	11	12	9	13	8	21
2022/2023	315	31	90	46	45	18	42	2	7	19	1	9	5
2023/2024	217	5	6	5	6	28	70	40	25	9	1	3	19
2024/2025	527	22	71	47	21	38	34	0	33	58	84	39	80
2025/2026	606	169	73	118	98	136	12	0	0	0	0	0	0
Totale													3.168

Bicocca Open Archive