In this letter, we explore in detail the potential of nanoheteroepitaxy to controllably fabricate high quality GeSn nano-structures and to further improve the crystallinity of GeSn alloys directly grown on Si(001). The GeSn was grown by molecular beam epitaxy at relatively high temperatures up to 750 °C on pre-patterned Si nano-pillars embedded in a SiO2 matrix. The best compromise between selective GeSn growth and homogenous Sn incorporation of 1.4% was achieved at a growth temperature of 600 °C. X-ray diffraction measurements confirmed that our growth approach results in both fully relaxed GeSn nano-islands and negligible Si interdiffusion into the core of the nanostructures. Detailed transmission electron microscopy characterizations show that only the small GeSn/Si interface area reveals defects, such as stacking faults. Importantly, the main part of the GeSn islands is defect-free and of high crystalline quality. The latter was further demonstrated by photoluminescence measurements where a clear redshift of the direct ΓC-ΓV transition was observed with increasing Sn content.

Schlykow, V., Klesse, W., Niu, G., Taoka, N., Yamamoto, Y., Skibitzki, O., et al. (2016). Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001). APPLIED PHYSICS LETTERS, 109(20) [10.1063/1.4967500].

Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)

BARGET, MICHAEL REINER;
2016

Abstract

In this letter, we explore in detail the potential of nanoheteroepitaxy to controllably fabricate high quality GeSn nano-structures and to further improve the crystallinity of GeSn alloys directly grown on Si(001). The GeSn was grown by molecular beam epitaxy at relatively high temperatures up to 750 °C on pre-patterned Si nano-pillars embedded in a SiO2 matrix. The best compromise between selective GeSn growth and homogenous Sn incorporation of 1.4% was achieved at a growth temperature of 600 °C. X-ray diffraction measurements confirmed that our growth approach results in both fully relaxed GeSn nano-islands and negligible Si interdiffusion into the core of the nanostructures. Detailed transmission electron microscopy characterizations show that only the small GeSn/Si interface area reveals defects, such as stacking faults. Importantly, the main part of the GeSn islands is defect-free and of high crystalline quality. The latter was further demonstrated by photoluminescence measurements where a clear redshift of the direct ΓC-ΓV transition was observed with increasing Sn content.
Articolo in rivista - Articolo scientifico
GeSn, nanoheteroepitaxy
English
Schlykow, V., Klesse, W., Niu, G., Taoka, N., Yamamoto, Y., Skibitzki, O., et al. (2016). Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001). APPLIED PHYSICS LETTERS, 109(20) [10.1063/1.4967500].
Schlykow, V; Klesse, W; Niu, G; Taoka, N; Yamamoto, Y; Skibitzki, O; Barget, M; Zaumseil, P; von Känel, H; Schubert, M; Capellini, G; Schroeder, T
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/137131
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