BERGAMASCHINI, ROBERTO
BERGAMASCHINI, ROBERTO
DIPARTIMENTO DI SCIENZA DEI MATERIALI
Morphological evolution via surface diffusion learned by convolutional, recurrent neural networks: Extrapolation and prediction uncertainty
2022 Lanzoni, D; Albani, M; Bergamaschini, R; Montalenti, F
Doubling the mobility of InAs/InGaAs selective area grown nanowires
2022 Beznasyuk, D; Marti-Sanchez, S; Kang, J; Tanta, R; Rajpalke, M; Stankevic, T; Christensen, A; Spadaro, M; Bergamaschini, R; Maka, N; Petersen, C; Carrad, D; Jespersen, T; Arbiol, J; Krogstrup, P
Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects
2022 De Donno, M; Albani, M; Bergamaschini, R; Montalenti, F
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy
2022 Vanacore, G; Chrastina, D; Scalise, E; Barbisan, L; Ballabio, A; Mauceri, M; La Via, F; Capitani, G; Crippa, D; Marzegalli, A; Bergamaschini, R; Miglio, L
Morphological evolution and compositional segregation effects in core-shell nanowires
2021 Bergamaschini, R; Scalise, E; Albani, M; Assali, S; Plantenga, R; Koelling, S; Verheijen, M; Bakkers, E; Montalenti, F; Miglio, L
Semiconductor heteroepitaxy
2021 Bergamaschini, R; Vitiello, E
Modeling the kinetic-driven morphological evolution in the 3D epitaxy of semiconductor micro- and nano-structures
2021 Bergamaschini, R; Albani, M; Montalenti, F; Miglio, L
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting
2021 Bergamaschini, R; Plantenga, R; Albani, M; Scalise, E; Ren, Y; Hauge, H; Kolling, S; Montalenti, F; Bakkers, E; Verheijen, M; Miglio, L
Semiconductor Heteroepitaxy
2021 Bergamaschini, R; Vitiello, E
Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments
2021 Albani, M; Bergamaschini, R; Barzaghi, A; Salvalaglio, M; Valente, J; Paul, D; Voigt, A; Isella, G; Montalenti, F
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars
2021 Agati, M; Boninelli, S; Calabretta, C; Mancarella, F; Mauceri, M; Crippa, D; Albani, M; Bergamaschini, R; Miglio, L; La Via, F
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates
2020 Bergamaschini, R; Albani, M; Scalise, E; Acciarri, M; Marzegalli, A; Montalenti, F; Miglio, L
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates
2020 Barzaghi, A; Firoozabadi, S; Salvalaglio, M; Bergamaschini, R; Ballabio, A; Beyer, A; Albani, M; Valente, J; Voigt, A; Paul, D; Miglio, L; Montalenti, F; Volz, K; Isella, G
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study
2020 Bergamaschini, R; Montalenti, F; Miglio, L
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires
2020 Assali, S; Bergamaschini, R; Scalise, E; Verheijen, M; Albani, M; Dijkstra, A; Li, A; Koelling, S; Bakkers, E; Montalenti, F; Miglio, L
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A
2020 Tuktamyshev, A; Fedorov, A; Bietti, S; Tsukamoto, S; Bergamaschini, R; Montalenti, F; Sanguinetti, S
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study
2020 Bollani, M; Fedorov, A; Albani, M; Bietti, S; Bergamaschini, R; Montalenti, F; Ballabio, A; Miglio, L; Sanguinetti, S
Continuum model of out-of-equilibrium crystal growth: theory and experiments
2019 Bergamaschini, R; Albani, M; Montalenti, F; Miglio, L
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars
2019 Albani, M; Bergamaschini, R; Scalise, E; Montalenti, F; Miglio, L
Modelling the kinetic growth and faceting of vertical micro- and nano-structures on Si
2019 Albani, M; Bergamaschini, R; Salvalaglio, M; Voigt, A; Miglio, L; Montalenti, F