SCOPECE, DANIELE
 Distribuzione geografica
Continente #
NA - Nord America 1.263
EU - Europa 464
AS - Asia 209
SA - Sud America 2
AF - Africa 1
Continente sconosciuto - Info sul continente non disponibili 1
Totale 1.940
Nazione #
US - Stati Uniti d'America 1.243
DE - Germania 97
CN - Cina 78
SE - Svezia 69
UA - Ucraina 63
IE - Irlanda 57
IT - Italia 47
SG - Singapore 45
RU - Federazione Russa 42
VN - Vietnam 33
HK - Hong Kong 25
AT - Austria 24
GB - Regno Unito 24
IN - India 21
CA - Canada 20
FI - Finlandia 17
BE - Belgio 8
CH - Svizzera 6
FR - Francia 6
JP - Giappone 3
BR - Brasile 2
ID - Indonesia 2
DK - Danimarca 1
ES - Italia 1
EU - Europa 1
KR - Corea 1
ME - Montenegro 1
MU - Mauritius 1
NL - Olanda 1
TR - Turchia 1
Totale 1.940
Città #
Ann Arbor 169
Woodbridge 138
Fairfield 121
Chandler 119
Houston 117
Jacksonville 75
Ashburn 69
Frankfurt am Main 66
Seattle 56
Dublin 51
Wilmington 47
Dearborn 44
New York 38
Singapore 37
Cambridge 36
Santa Clara 34
Princeton 26
Dong Ket 25
Hong Kong 24
Vienna 24
Milan 16
Nanjing 16
Lachine 13
Shanghai 13
Beijing 12
Lawrence 9
Altamura 8
Brussels 8
Changsha 5
Nanchang 5
Cagliari 4
London 4
Serra 4
Shenyang 4
Andover 3
Boardman 3
Dresden 3
Dubendorf 3
Helsinki 3
Jinan 3
San Diego 3
Toronto 3
Zurich 3
Carp 2
Falls Church 2
Frankfurt An Der Oder 2
Guangzhou 2
Hebei 2
Hefei 2
Jakarta 2
Jiaxing 2
Mountain View 2
Norman 2
Norwalk 2
Pisa 2
Pune 2
Redmond 2
Rio De Janeiro 2
Southampton 2
Taizhou 2
Tianjin 2
Berlin 1
Bremen 1
Buffalo 1
Camden 1
Chicago 1
Dallas 1
Glasgow 1
Haikou 1
Hangzhou 1
Hanover 1
Huizen 1
Kunming 1
Lanzhou 1
Lappeenranta 1
Loreto 1
Los Angeles 1
Medolago 1
Milwaukee 1
Ottawa 1
Phoenix 1
Podgorica 1
Rome 1
Rose Hill 1
San Mateo 1
San Mauro Torinese 1
Sant'ambrogio Di Torino 1
Taiyuan 1
University Park 1
Valladolid 1
Zhengzhou 1
Totale 1.530
Nome #
Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis 204
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures 181
SiGe nano-stressors for Ge strain-engineering 164
One-Dimensional to Three-Dimensional Ripple-to-Dome Transition for SiGe on Vicinal Si(1 1 10) 161
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 152
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 151
Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds to a Perfectly Faceted Wetting Layer 148
Stability of Ge on Si (1 1 10) surfaces and the role of dimer tilting 145
Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures. 144
Self-organized evolution of Ge/Si(001) into intersecting bundles of horizontal nanowires during annealing 139
One-dimensional Ge nanostructures on Si(001) and Si(1 1 10): Dominant role of surface energy 139
Surface and interface effects on the stability of SiGe nanoislands 123
Local uniaxial tensile deformation of germanium up to the 4% threshold by epitaxial nanostructures 116
Totale 1.967
Categoria #
all - tutte 6.401
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.401


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020277 0 0 0 0 38 37 66 28 49 32 21 6
2020/2021218 20 8 18 20 4 12 23 13 18 23 19 40
2021/2022118 2 13 24 7 4 6 3 14 6 7 7 25
2022/2023369 27 112 42 38 26 49 0 18 42 0 7 8
2023/2024179 10 6 6 1 17 48 33 16 20 1 2 19
2024/2025129 16 58 12 11 32 0 0 0 0 0 0 0
Totale 1.967