SCOPECE, DANIELE
 Distribuzione geografica
Continente #
NA - Nord America 1.201
EU - Europa 429
AS - Asia 177
SA - Sud America 2
AF - Africa 1
Continente sconosciuto - Info sul continente non disponibili 1
Totale 1.811
Nazione #
US - Stati Uniti d'America 1.182
DE - Germania 97
CN - Cina 78
SE - Svezia 69
UA - Ucraina 63
IE - Irlanda 57
IT - Italia 45
VN - Vietnam 33
AT - Austria 24
HK - Hong Kong 24
GB - Regno Unito 23
IN - India 21
CA - Canada 19
FI - Finlandia 17
SG - Singapore 14
RU - Federazione Russa 10
BE - Belgio 8
CH - Svizzera 6
FR - Francia 6
JP - Giappone 3
BR - Brasile 2
ID - Indonesia 2
DK - Danimarca 1
ES - Italia 1
EU - Europa 1
KR - Corea 1
ME - Montenegro 1
MU - Mauritius 1
NL - Olanda 1
TR - Turchia 1
Totale 1.811
Città #
Ann Arbor 169
Woodbridge 138
Fairfield 121
Chandler 119
Houston 117
Jacksonville 75
Ashburn 67
Frankfurt am Main 66
Seattle 56
Dublin 51
Wilmington 47
Dearborn 44
New York 38
Cambridge 36
Princeton 26
Dong Ket 25
Hong Kong 24
Vienna 24
Nanjing 16
Milan 14
Lachine 13
Shanghai 13
Beijing 12
Lawrence 9
Altamura 8
Brussels 8
Singapore 8
Changsha 5
Nanchang 5
Cagliari 4
London 4
Serra 4
Shenyang 4
Andover 3
Boardman 3
Dresden 3
Dubendorf 3
Helsinki 3
Jinan 3
San Diego 3
Toronto 3
Zurich 3
Carp 2
Falls Church 2
Frankfurt An Der Oder 2
Guangzhou 2
Hebei 2
Hefei 2
Jakarta 2
Jiaxing 2
Mountain View 2
Norman 2
Norwalk 2
Pisa 2
Pune 2
Redmond 2
Rio De Janeiro 2
Southampton 2
Taizhou 2
Tianjin 2
Berlin 1
Bremen 1
Buffalo 1
Chicago 1
Glasgow 1
Haikou 1
Hangzhou 1
Hanover 1
Huizen 1
Kunming 1
Lanzhou 1
Lappeenranta 1
Loreto 1
Los Angeles 1
Medolago 1
Phoenix 1
Podgorica 1
Rome 1
Rose Hill 1
San Mateo 1
San Mauro Torinese 1
Sant'ambrogio Di Torino 1
Taiyuan 1
University Park 1
Valladolid 1
Zhengzhou 1
Totale 1.459
Nome #
Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis 198
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures 174
SiGe nano-stressors for Ge strain-engineering 156
One-Dimensional to Three-Dimensional Ripple-to-Dome Transition for SiGe on Vicinal Si(1 1 10) 154
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) 146
Formation of Ge Nanoripples on Vicinal Si (1110): From Stranski-Krastanow Seeds to a Perfectly Faceted Wetting Layer 138
Collective Shape Oscillations of SiGe Islands on Pit-Patterned Si(001) Substrates: A Coherent-Growth Strategy Enabled by Self-Regulated Intermixing 135
Self-organized evolution of Ge/Si(001) into intersecting bundles of horizontal nanowires during annealing 132
One-dimensional Ge nanostructures on Si(001) and Si(1 1 10): Dominant role of surface energy 132
Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures. 132
Stability of Ge on Si (1 1 10) surfaces and the role of dimer tilting 131
Surface and interface effects on the stability of SiGe nanoislands 110
Local uniaxial tensile deformation of germanium up to the 4% threshold by epitaxial nanostructures 100
Totale 1.838
Categoria #
all - tutte 5.340
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.340


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201944 0 0 0 0 0 0 0 0 0 0 0 44
2019/2020403 49 13 28 36 38 37 66 28 49 32 21 6
2020/2021218 20 8 18 20 4 12 23 13 18 23 19 40
2021/2022118 2 13 24 7 4 6 3 14 6 7 7 25
2022/2023369 27 112 42 38 26 49 0 18 42 0 7 8
2023/2024179 10 6 6 1 17 48 33 16 20 1 2 19
Totale 1.838