Ge/Si(001) is a prototypical system for investigating three-dimensional island self-assembly owed to the Stranski-Krastanow growth mode. More than twenty years of research have produced an impressive amount of results, together with various theoretical interpretations. It is commonly believed that lattice-mismatch strain relief is the major driving force leading to the formation of these islands. However, a set of recent results on Si(001) and vicinals point out that, under suitable conditions, this is not the case. Indeed, we here review experimental and theoretical results dealing with nanostructures mainly determined by surface-energy minimization. Results are intriguing, as they reveal the existence of magic sizes, show the presence of very peculiar morphologies, such as micron-long wires, and distinguish among attempts to facet the wetting-layer and true SK islands.
Montalenti, F., Scopece, D., Miglio, L. (2013). One-dimensional Ge nanostructures on Si(001) and Si(1 1 10): Dominant role of surface energy. COMPTES RENDUS PHYSIQUE, 14(7), 542-552 [10.1016/j.crhy.2013.06.003].
One-dimensional Ge nanostructures on Si(001) and Si(1 1 10): Dominant role of surface energy
Montalenti, F
;Scopece, D
;Miglio, L
2013
Abstract
Ge/Si(001) is a prototypical system for investigating three-dimensional island self-assembly owed to the Stranski-Krastanow growth mode. More than twenty years of research have produced an impressive amount of results, together with various theoretical interpretations. It is commonly believed that lattice-mismatch strain relief is the major driving force leading to the formation of these islands. However, a set of recent results on Si(001) and vicinals point out that, under suitable conditions, this is not the case. Indeed, we here review experimental and theoretical results dealing with nanostructures mainly determined by surface-energy minimization. Results are intriguing, as they reveal the existence of magic sizes, show the presence of very peculiar morphologies, such as micron-long wires, and distinguish among attempts to facet the wetting-layer and true SK islands.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.