GATTI, RICCARDO
 Distribuzione geografica
Continente #
NA - Nord America 938
EU - Europa 511
AS - Asia 197
Totale 1.646
Nazione #
US - Stati Uniti d'America 921
DE - Germania 109
SE - Svezia 93
CN - Cina 83
UA - Ucraina 73
IT - Italia 55
IE - Irlanda 54
SG - Singapore 45
RU - Federazione Russa 43
GB - Regno Unito 34
VN - Vietnam 29
HK - Hong Kong 20
FI - Finlandia 19
CA - Canada 17
IN - India 13
ES - Italia 9
BE - Belgio 8
FR - Francia 6
NL - Olanda 5
JP - Giappone 2
RO - Romania 2
AT - Austria 1
BD - Bangladesh 1
ID - Indonesia 1
KR - Corea 1
SA - Arabia Saudita 1
TR - Turchia 1
Totale 1.646
Città #
Woodbridge 159
Ann Arbor 129
Chandler 101
Jacksonville 77
Frankfurt am Main 75
Fairfield 57
Dublin 52
Houston 49
Ashburn 41
Dearborn 41
Singapore 39
Wilmington 33
Princeton 27
Cambridge 26
New York 24
Seattle 23
Dong Ket 20
Hong Kong 20
Milan 20
Shanghai 20
Nanjing 17
Altamura 12
Lachine 12
Santa Clara 12
Brussels 8
Lawrence 8
Andover 7
Beijing 7
Helsinki 7
Nanchang 7
Oxford 7
Cagliari 6
Guangzhou 5
Hebei 5
Huizen 5
San Diego 5
Auburn Hills 4
Boardman 4
Mountain View 4
Zhengzhou 4
Jinan 3
Falls Church 2
Genoa 2
Hangzhou 2
Jiaxing 2
Karlsruhe 2
Los Angeles 2
Ningbo 2
Norwalk 2
Ottawa 2
Ringoes 2
Shenyang 2
Toronto 2
Atlanta 1
Baotou 1
Changsha 1
Chicago 1
Dallas 1
Edmonton 1
Guiyang 1
Jakarta 1
Kiev 1
Kilburn 1
London 1
Lyon 1
Nellore 1
Novosibirsk 1
Phoenix 1
Rho 1
Riyadh 1
Seodaemun-gu 1
Tianjin 1
Tokyo 1
Valladolid 1
Varenna 1
Vienna 1
Totale 1.229
Nome #
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 212
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 162
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 157
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 139
Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001) 135
Self-aligned epitaxy in a mask-less deposition with kinetic and geometric constraints 130
Modeling the plastic relaxation onset in realistic SiGe islands on Si(001) 124
A fast computational method for determining equilibrium concentration profiles in intermixed nanoislands 116
Intermixing in heteroepitaxial islands: fast, self-consistent calculation of the concentration profile minimizing the elastic energy 113
Modeling elastic and plastic relaxation in silicon-germanium heteroepitaxial nanostructures 106
SiGe/Si Vertical Heterostructures: Switching the Dislocation Sign by Substrate Under-Etching 103
Dislocation trapping in epitaxial islands, escavated trenches and pits: nanoscale laboratories for simulations and experiments 103
Modeling of dislocations in Ge-Si heteroepitaxial systems at the nanoscale 87
Totale 1.687
Categoria #
all - tutte 5.336
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.336


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020245 0 0 20 19 32 42 40 17 39 14 18 4
2020/2021175 18 4 15 18 7 20 15 5 14 20 6 33
2021/2022141 4 15 25 13 5 11 7 9 5 12 12 23
2022/2023360 26 112 47 45 20 52 0 14 28 3 8 5
2023/2024181 6 9 11 3 21 39 35 23 13 1 2 18
2024/202584 21 62 1 0 0 0 0 0 0 0 0 0
Totale 1.687