GATTI, RICCARDO
 Distribuzione geografica
Continente #
NA - Nord America 910
EU - Europa 486
AS - Asia 148
Totale 1.544
Nazione #
US - Stati Uniti d'America 893
DE - Germania 109
SE - Svezia 93
CN - Cina 78
UA - Ucraina 73
IT - Italia 55
IE - Irlanda 54
GB - Regno Unito 34
VN - Vietnam 29
HK - Hong Kong 20
FI - Finlandia 19
RU - Federazione Russa 18
CA - Canada 17
IN - India 13
ES - Italia 9
BE - Belgio 8
FR - Francia 6
NL - Olanda 5
JP - Giappone 2
RO - Romania 2
SG - Singapore 2
AT - Austria 1
BD - Bangladesh 1
KR - Corea 1
SA - Arabia Saudita 1
TR - Turchia 1
Totale 1.544
Città #
Woodbridge 159
Ann Arbor 129
Chandler 101
Jacksonville 77
Frankfurt am Main 75
Fairfield 57
Dublin 52
Houston 49
Dearborn 41
Ashburn 40
Wilmington 33
Princeton 27
Cambridge 26
New York 24
Seattle 23
Dong Ket 20
Hong Kong 20
Milan 20
Nanjing 17
Shanghai 16
Altamura 12
Lachine 12
Brussels 8
Lawrence 8
Andover 7
Beijing 7
Helsinki 7
Nanchang 7
Oxford 7
Cagliari 6
Guangzhou 5
Hebei 5
Huizen 5
San Diego 5
Auburn Hills 4
Boardman 4
Mountain View 4
Zhengzhou 4
Jinan 3
Falls Church 2
Genoa 2
Hangzhou 2
Jiaxing 2
Karlsruhe 2
Los Angeles 2
Ningbo 2
Norwalk 2
Ottawa 2
Ringoes 2
Shenyang 2
Toronto 2
Atlanta 1
Baotou 1
Changsha 1
Chicago 1
Edmonton 1
Guiyang 1
Kiev 1
Kilburn 1
London 1
Lyon 1
Nellore 1
Novosibirsk 1
Phoenix 1
Rho 1
Riyadh 1
Seodaemun-gu 1
Singapore 1
Tianjin 1
Tokyo 1
Valladolid 1
Varenna 1
Vienna 1
Totale 1.172
Nome #
Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor 199
Assessing the composition of hetero-epitaxial islands via morphological analysis: an analytical model matching GeSi/Si(001) data 153
Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates 148
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands 135
Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001) 129
Self-aligned epitaxy in a mask-less deposition with kinetic and geometric constraints 124
Modeling the plastic relaxation onset in realistic SiGe islands on Si(001) 112
A fast computational method for determining equilibrium concentration profiles in intermixed nanoislands 110
Intermixing in heteroepitaxial islands: fast, self-consistent calculation of the concentration profile minimizing the elastic energy 105
Modeling elastic and plastic relaxation in silicon-germanium heteroepitaxial nanostructures 101
SiGe/Si Vertical Heterostructures: Switching the Dislocation Sign by Substrate Under-Etching 95
Dislocation trapping in epitaxial islands, escavated trenches and pits: nanoscale laboratories for simulations and experiments 93
Modeling of dislocations in Ge-Si heteroepitaxial systems at the nanoscale 81
Totale 1.585
Categoria #
all - tutte 4.538
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.538


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201961 0 0 0 0 0 0 0 0 0 0 30 31
2019/2020295 38 12 20 19 32 42 40 17 39 14 18 4
2020/2021175 18 4 15 18 7 20 15 5 14 20 6 33
2021/2022141 4 15 25 13 5 11 7 9 5 12 12 23
2022/2023360 26 112 47 45 20 52 0 14 28 3 8 5
2023/2024163 6 9 11 3 21 39 35 23 13 1 2 0
Totale 1.585