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Titolo Tipologia Data di pubblicazione Autori File
Quantum-confined modulated nanostructure for optoelectronic devices 02 - Intervento a convegno 2024 Vichi, SBietti, STuktamyshev, ASanguinetti, S +
Highly symmetrical DE QDs on GaAs(111)A at 780 nm and 1.3 µm 02 - Intervento a convegno 2024 Tuktamyshev, AVichi, SBietti, SSanguinetti, S +
Design and Simulation of a Transmon Qubit Chip for Axion Detection 01 - Articolo su rivista 2024 Moretti R.Corti H. A.Labranca D.Borghesi M.Fanciulli M.Faverzani M.Ferri E.Giachero A.Nucciotti A.Origo L.Sanguinetti S. +
Morphological evolution and structural study of annealed amorphous-Ge films: Interplay between crystallization and dewetting 01 - Articolo su rivista 2024 Sanguinetti S. +
Local droplet etching of a vicinal InGaAs(111)A metamorphic layer 01 - Articolo su rivista 2024 Tuktamyshev, ArturLambardi, DavideVichi, StefanoCesura, FedericoCecchi, StefanoBietti, SergioSanguinetti, Stefano +
Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling 01 - Articolo su rivista 2024 Cesura F.Vichi S.Tuktamyshev A.Bietti S.Sanguinetti S.Tsukamoto S. +
Temperature activated transitions in the self assembly of Ga and In droplets on (111)A vicinal substrates 02 - Intervento a convegno 2023 Artur TuktamyshevFederico CesuraStefano VichiSergio BiettiStefano Sanguinetti +
Droplet Epitaxy Quantum Materials for Photonic and Energy Applications 02 - Intervento a convegno 2023 Stefano Sanguinetti
Droplet nucleation on a vicinal surface: temperature-activated transitions of a density dependence 02 - Intervento a convegno 2023 Tuktamyshev, AVichi, SCesura, FBietti, SSanguinetti, S +
Effects of random alloy disorder, shape deformation, and substrate misorientation on the exciton lifetime and fine structure splitting of GaAs/ Alx Ga1-xAs (111) quantum dots 01 - Articolo su rivista 2023 Basset, FBBietti, SSanguinetti, S +
Enhancing intermediate band solar cell performances through quantum engineering of dot states by droplet epitaxy 01 - Articolo su rivista 2023 Scaccabarozzi, AVichi, SBietti, SCesura, FAcciarri, MSanguinetti, S +
Precise structure characterization of droplet epitaxial telecom-wavelength QDs for Quantum Information Technology 02 - Intervento a convegno 2022 Tuktamyshev, AVichi, SCesura, FBietti, SSanguinetti, S +
Optically controlled dual-band quantum dot infrared photodetector 01 - Articolo su rivista 2022 Stefano VichiSergio BiettiFrancesco Basso BassetArtur TuktamyshevStefano Sanguinetti +
Tailoring of embedded dielectric alumina film in AlGaAs epilayer by selective thermal oxidation 01 - Articolo su rivista 2022 Sanguinetti S. +
Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets 01 - Articolo su rivista 2022 Azadmand, ManiVichi, StefanoBietti, SergioBonera, EmilianoVanacore, Giovanni MariaTsukamoto, ShiroSanguinetti, Stefano +
Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate 01 - Articolo su rivista 2022 Tuktamyshev A.Sanguinetti S. +
Exciton Fine Structure in InAs Quantum Dots with Cavity-Enhanced Emission at Telecommunication Wavelength and Grown on a GaAs (111) A Vicinal Substrate 01 - Articolo su rivista 2022 Tuktamyshev A.Bietti S.Vichi S.Sanguinetti S. +
Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control 01 - Articolo su rivista 2022 Tuktamyshev, AVichi, SCesura, FBietti, STsukamoto, SSanguinetti, S +
Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates 01 - Articolo su rivista 2022 Tuktamyshev, ArturVichi, StefanoCesura, FedericoLambardi, DavidePedrini, JacopoVitiello, ElisaPezzoli, FabioBietti, SergioSanguinetti, Stefano +
Enhanced Radiative Efficiency in GaN Nanowires Grown on Sputtered TiNx: Effects of Surface Electric Fields 01 - Articolo su rivista 2021 Azadmand M.Sanguinetti S. +
Mostrati risultati da 1 a 20 di 256
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