Bicocca Open Archive

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ALBANI, MARCO GIOCONDO
 Distribuzione geografica
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Continente #
NA - Nord America 3.726
EU - Europa 2.270
AS - Asia 1.901
SA - Sud America 297
AF - Africa 38
Continente sconosciuto - Info sul continente non disponibili 5
OC - Oceania 5
Totale 8.242
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Nazione #
US - Stati Uniti d'America 3.660
SG - Singapore 684
DE - Germania 513
IT - Italia 496
CN - Cina 495
HK - Hong Kong 295
RU - Federazione Russa 291
SE - Svezia 256
BR - Brasile 245
VN - Vietnam 180
IE - Irlanda 176
AT - Austria 98
GB - Regno Unito 93
FR - Francia 72
UA - Ucraina 60
ID - Indonesia 56
CA - Canada 51
IN - India 50
DK - Danimarca 41
FI - Finlandia 41
CH - Svizzera 31
BD - Bangladesh 28
ES - Italia 28
AR - Argentina 27
NL - Olanda 25
TR - Turchia 25
JP - Giappone 22
ZA - Sudafrica 17
KR - Corea 14
BE - Belgio 13
EC - Ecuador 8
MX - Messico 8
PK - Pakistan 8
LT - Lituania 7
MA - Marocco 7
PL - Polonia 6
EU - Europa 5
GR - Grecia 5
IR - Iran 5
TH - Thailandia 5
AL - Albania 4
AU - Australia 4
CO - Colombia 4
IQ - Iraq 4
SA - Arabia Saudita 4
AZ - Azerbaigian 3
BG - Bulgaria 3
CI - Costa d'Avorio 3
PY - Paraguay 3
UY - Uruguay 3
UZ - Uzbekistan 3
VE - Venezuela 3
CZ - Repubblica Ceca 2
GA - Gabon 2
GE - Georgia 2
HU - Ungheria 2
IL - Israele 2
KH - Cambogia 2
MY - Malesia 2
NP - Nepal 2
PE - Perù 2
RO - Romania 2
TN - Tunisia 2
TT - Trinidad e Tobago 2
TW - Taiwan 2
AE - Emirati Arabi Uniti 1
AO - Angola 1
BB - Barbados 1
BH - Bahrain 1
BO - Bolivia 1
BY - Bielorussia 1
BZ - Belize 1
CL - Cile 1
CR - Costa Rica 1
EG - Egitto 1
GW - Guinea-Bissau 1
IS - Islanda 1
JM - Giamaica 1
JO - Giordania 1
KE - Kenya 1
KW - Kuwait 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LU - Lussemburgo 1
LV - Lettonia 1
MD - Moldavia 1
NZ - Nuova Zelanda 1
OM - Oman 1
PA - Panama 1
SC - Seychelles 1
SN - Senegal 1
ZW - Zimbabwe 1
Totale 8.242
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Città #
Ann Arbor 1.185
Singapore 382
Frankfurt am Main 348
Hong Kong 282
Milan 238
Chandler 213
Fairfield 201
Ashburn 193
Dublin 166
Wilmington 166
Houston 130
Santa Clara 111
Woodbridge 108
Dearborn 90
Vienna 87
Beijing 84
New York 84
Princeton 81
Seattle 79
Dong Ket 73
Cambridge 71
Nanjing 61
Jacksonville 60
Jakarta 52
Dresden 47
Los Angeles 46
Council Bluffs 37
Ho Chi Minh City 34
Dallas 33
Shanghai 30
Altamura 27
Buffalo 25
Lausanne 24
Moscow 21
São Paulo 20
Lawrence 19
The Dalles 19
Boardman 18
Hangzhou 18
Chicago 16
Nanchang 16
Guangzhou 15
Saclay 14
Columbus 13
Helsinki 13
San Diego 13
London 12
Sacramento 12
Brussels 11
Ottawa 11
Rome 11
Brooklyn 10
Hanoi 10
Marburg 10
Pune 10
Shenyang 10
Tianjin 10
Tokyo 10
Changsha 9
Chatou 9
Düsseldorf 9
Norwalk 9
Toronto 9
Hefei 8
Kunming 8
Montreal 8
Ningbo 8
Phoenix 8
Rio de Janeiro 8
Turin 8
Turku 8
Brasília 7
Eindhoven 7
Grafing 7
Jinan 7
Lachine 7
Amsterdam 6
Andover 6
Ardea 6
Basingstoke 6
Belo Horizonte 6
Dhaka 6
Jiaxing 6
Lanzhou 6
Redondo Beach 6
Valladolid 6
Arcore 5
Cagliari 5
Chittagong 5
Edmonton 5
Falls Church 5
Fremont 5
Hebei 5
Hwaseong-si 5
Johannesburg 5
Kanpur 5
Lahore 5
Lappeenranta 5
Lauterbourg 5
Mountain View 5
Totale 5.464
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Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 414
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 394
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 391
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 377
Modeling of 3D heteroepitaxial structures by continuum approaches 315
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 284
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 279
Strain engineering in Ge/GeSn core/shell nanowires 256
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 233
Dynamics of pit filling in heteroepitaxy via phase-field simulations 224
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 224
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 219
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 217
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 211
Modelling the kinetic growth mode of GaAs nanomembranes 210
Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires 209
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 207
Continuum modeling of heteroepitaxial growth in semiconductors 204
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 198
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 198
Twofold origin of strain-induced bending in core-shell nanowires: the GaP/InGaP case 197
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 188
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 187
Morphological evolution and compositional segregation effects in core-shell nanowires 187
Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects 185
Morphological evolution via surface diffusion learned by convolutional, recurrent neural networks: Extrapolation and prediction uncertainty 179
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 172
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 172
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 169
Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments 168
Modeling semiconductor heteroepitaxy: a continuum approach 163
Phase-field modelling of compositional segregation during the growth of core-shell nanowires 160
Strain and strain-driven effects in coaxial nanowires 159
Modeling the kinetic-driven morphological evolution in the 3D epitaxy of semiconductor micro- and nano-structures 159
Dynamics of pit filling in heteroepitaxy via phase-field simulations 151
Strain relaxation in semiconductor core/shell nanowires 148
Understanding the kinetics segregation in core-shell nanowires: a phase-field approach 140
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 139
Stress engineering of boron doped diamond thin films via micro-fabrication 129
Modelling the kinetic growth and faceting of vertical micro- and nano-structures on Si 117
Continuum model of out-of-equilibrium crystal growth: theory and experiments 106
Totale 8.639
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Categoria #
all - tutte 28.644
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 28.644
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021641 0 0 0 0 0 0 89 77 101 94 90 190
2021/20221.125 113 98 155 137 83 60 56 61 51 94 84 133
2022/20231.083 124 244 132 125 92 169 6 48 67 21 24 31
2023/2024567 26 37 22 15 94 138 101 16 34 5 19 60
2024/20251.471 77 235 99 58 113 101 98 85 113 222 86 184
2025/20261.435 285 178 282 180 325 166 19 0 0 0 0 0
Totale 8.639