ALBANI, MARCO GIOCONDO
 Distribuzione geografica
Continente #
NA - Nord America 3.700
EU - Europa 2.259
AS - Asia 1.795
SA - Sud America 294
AF - Africa 38
Continente sconosciuto - Info sul continente non disponibili 5
OC - Oceania 5
Totale 8.096
Nazione #
US - Stati Uniti d'America 3.637
SG - Singapore 594
DE - Germania 513
IT - Italia 492
CN - Cina 486
HK - Hong Kong 295
RU - Federazione Russa 291
SE - Svezia 256
BR - Brasile 242
VN - Vietnam 180
IE - Irlanda 175
AT - Austria 98
GB - Regno Unito 88
FR - Francia 72
UA - Ucraina 60
ID - Indonesia 56
CA - Canada 50
IN - India 48
DK - Danimarca 41
FI - Finlandia 40
CH - Svizzera 31
BD - Bangladesh 28
ES - Italia 28
AR - Argentina 27
NL - Olanda 25
TR - Turchia 25
JP - Giappone 19
ZA - Sudafrica 17
KR - Corea 14
BE - Belgio 13
EC - Ecuador 8
PK - Pakistan 8
LT - Lituania 7
MA - Marocco 7
MX - Messico 6
PL - Polonia 6
EU - Europa 5
GR - Grecia 5
IR - Iran 5
TH - Thailandia 5
AL - Albania 4
AU - Australia 4
CO - Colombia 4
IQ - Iraq 4
SA - Arabia Saudita 4
AZ - Azerbaigian 3
BG - Bulgaria 3
CI - Costa d'Avorio 3
PY - Paraguay 3
UY - Uruguay 3
VE - Venezuela 3
CZ - Repubblica Ceca 2
GA - Gabon 2
GE - Georgia 2
HU - Ungheria 2
IL - Israele 2
KH - Cambogia 2
MY - Malesia 2
NP - Nepal 2
PE - Perù 2
RO - Romania 2
TN - Tunisia 2
TT - Trinidad e Tobago 2
TW - Taiwan 2
UZ - Uzbekistan 2
AE - Emirati Arabi Uniti 1
AO - Angola 1
BB - Barbados 1
BH - Bahrain 1
BO - Bolivia 1
BY - Bielorussia 1
BZ - Belize 1
CL - Cile 1
CR - Costa Rica 1
EG - Egitto 1
GW - Guinea-Bissau 1
IS - Islanda 1
JM - Giamaica 1
JO - Giordania 1
KE - Kenya 1
KW - Kuwait 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LU - Lussemburgo 1
LV - Lettonia 1
MD - Moldavia 1
NZ - Nuova Zelanda 1
OM - Oman 1
PA - Panama 1
SC - Seychelles 1
SN - Senegal 1
ZW - Zimbabwe 1
Totale 8.096
Città #
Ann Arbor 1.185
Frankfurt am Main 348
Singapore 343
Hong Kong 282
Milan 238
Chandler 213
Fairfield 201
Ashburn 187
Wilmington 166
Dublin 165
Houston 130
Santa Clara 111
Woodbridge 108
Dearborn 90
Vienna 87
Beijing 84
New York 84
Princeton 81
Seattle 79
Dong Ket 73
Cambridge 71
Nanjing 61
Jacksonville 60
Jakarta 52
Dresden 47
Los Angeles 46
Council Bluffs 34
Ho Chi Minh City 34
Dallas 33
Shanghai 28
Altamura 27
Buffalo 25
Lausanne 24
Moscow 21
Lawrence 19
São Paulo 19
Boardman 18
Hangzhou 18
Chicago 16
Nanchang 16
Guangzhou 15
Saclay 14
Columbus 13
Helsinki 13
San Diego 13
London 12
Sacramento 12
Brussels 11
Ottawa 11
Brooklyn 10
Hanoi 10
Marburg 10
Pune 10
Rome 10
Shenyang 10
The Dalles 10
Tianjin 10
Changsha 9
Chatou 9
Düsseldorf 9
Norwalk 9
Tokyo 9
Hefei 8
Kunming 8
Montreal 8
Ningbo 8
Phoenix 8
Rio de Janeiro 8
Toronto 8
Turin 8
Turku 8
Brasília 7
Eindhoven 7
Grafing 7
Jinan 7
Lachine 7
Amsterdam 6
Andover 6
Ardea 6
Belo Horizonte 6
Dhaka 6
Jiaxing 6
Lanzhou 6
Redondo Beach 6
Valladolid 6
Arcore 5
Cagliari 5
Chittagong 5
Edmonton 5
Falls Church 5
Fremont 5
Hebei 5
Hwaseong-si 5
Johannesburg 5
Lahore 5
Lauterbourg 5
Mountain View 5
Munich 5
Salt Lake City 5
Seoul 5
Totale 5.399
Nome #
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 409
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 391
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 387
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 374
Modeling of 3D heteroepitaxial structures by continuum approaches 309
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 281
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 275
Strain engineering in Ge/GeSn core/shell nanowires 255
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 226
Dynamics of pit filling in heteroepitaxy via phase-field simulations 217
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 215
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 215
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 211
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 208
Modelling the kinetic growth mode of GaAs nanomembranes 208
Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires 207
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 205
Continuum modeling of heteroepitaxial growth in semiconductors 203
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 195
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 195
Twofold origin of strain-induced bending in core-shell nanowires: the GaP/InGaP case 192
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 185
Morphological evolution and compositional segregation effects in core-shell nanowires 185
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 183
Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects 181
Morphological evolution via surface diffusion learned by convolutional, recurrent neural networks: Extrapolation and prediction uncertainty 174
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 169
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 167
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 165
Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments 165
Modeling semiconductor heteroepitaxy: a continuum approach 160
Phase-field modelling of compositional segregation during the growth of core-shell nanowires 159
Strain and strain-driven effects in coaxial nanowires 156
Modeling the kinetic-driven morphological evolution in the 3D epitaxy of semiconductor micro- and nano-structures 154
Dynamics of pit filling in heteroepitaxy via phase-field simulations 150
Strain relaxation in semiconductor core/shell nanowires 145
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 136
Understanding the kinetics segregation in core-shell nanowires: a phase-field approach 134
Stress engineering of boron doped diamond thin films via micro-fabrication 127
Modelling the kinetic growth and faceting of vertical micro- and nano-structures on Si 115
Continuum model of out-of-equilibrium crystal growth: theory and experiments 105
Totale 8.493
Categoria #
all - tutte 27.982
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 27.982


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021723 0 0 0 0 0 82 89 77 101 94 90 190
2021/20221.125 113 98 155 137 83 60 56 61 51 94 84 133
2022/20231.083 124 244 132 125 92 169 6 48 67 21 24 31
2023/2024567 26 37 22 15 94 138 101 16 34 5 19 60
2024/20251.471 77 235 99 58 113 101 98 85 113 222 86 184
2025/20261.289 285 178 282 180 325 39 0 0 0 0 0 0
Totale 8.493