Bicocca Open Archive

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ALBANI, MARCO GIOCONDO
 Distribuzione geografica
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Continente #
NA - Nord America 4.503
EU - Europa 2.571
AS - Asia 2.466
SA - Sud America 381
AF - Africa 73
Continente sconosciuto - Info sul continente non disponibili 6
OC - Oceania 6
Totale 10.006
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Nazione #
US - Stati Uniti d'America 4.269
SG - Singapore 860
IT - Italia 690
CN - Cina 535
DE - Germania 522
VN - Vietnam 323
HK - Hong Kong 308
RU - Federazione Russa 300
BR - Brasile 288
SE - Svezia 256
CA - Canada 212
IE - Irlanda 176
FR - Francia 113
GB - Regno Unito 112
AT - Austria 98
IN - India 93
UA - Ucraina 63
ID - Indonesia 61
BD - Bangladesh 50
FI - Finlandia 46
AR - Argentina 41
DK - Danimarca 41
TR - Turchia 39
CH - Svizzera 36
KR - Corea 36
ES - Italia 29
NL - Olanda 26
IQ - Iraq 24
JP - Giappone 24
ZA - Sudafrica 22
PK - Pakistan 21
BE - Belgio 13
PH - Filippine 13
EC - Ecuador 12
MX - Messico 12
SA - Arabia Saudita 12
VE - Venezuela 11
CO - Colombia 10
SC - Seychelles 10
AL - Albania 9
TH - Thailandia 8
LT - Lituania 7
MA - Marocco 7
PL - Polonia 7
AE - Emirati Arabi Uniti 5
AZ - Azerbaigian 5
EU - Europa 5
GR - Grecia 5
IR - Iran 5
MY - Malesia 5
PY - Paraguay 5
TN - Tunisia 5
AU - Australia 4
CL - Cile 4
CZ - Repubblica Ceca 4
ET - Etiopia 4
JO - Giordania 4
KE - Kenya 4
RO - Romania 4
UY - Uruguay 4
UZ - Uzbekistan 4
BG - Bulgaria 3
BO - Bolivia 3
CI - Costa d'Avorio 3
GE - Georgia 3
LB - Libano 3
NP - Nepal 3
PE - Perù 3
SN - Senegal 3
TW - Taiwan 3
ZW - Zimbabwe 3
BY - Bielorussia 2
CR - Costa Rica 2
DZ - Algeria 2
EG - Egitto 2
GA - Gabon 2
HU - Ungheria 2
IL - Israele 2
JM - Giamaica 2
KG - Kirghizistan 2
KH - Cambogia 2
KW - Kuwait 2
KZ - Kazakistan 2
OM - Oman 2
TT - Trinidad e Tobago 2
YE - Yemen 2
AM - Armenia 1
AO - Angola 1
BB - Barbados 1
BH - Bahrain 1
BZ - Belize 1
CW - ???statistics.table.value.countryCode.CW??? 1
GH - Ghana 1
GW - Guinea-Bissau 1
HN - Honduras 1
IS - Islanda 1
LA - Repubblica Popolare Democratica del Laos 1
LR - Liberia 1
LU - Lussemburgo 1
LV - Lettonia 1
Totale 9.995
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Città #
Ann Arbor 1.185
Singapore 507
Frankfurt am Main 351
Milan 318
San Jose 315
Hong Kong 290
Ashburn 226
Chandler 213
Fairfield 201
Dublin 166
Wilmington 166
Toronto 161
Houston 130
Santa Clara 118
Woodbridge 108
Beijing 92
New York 91
Dearborn 90
Vienna 87
Princeton 81
Seattle 79
Ho Chi Minh City 74
Dong Ket 73
Cambridge 71
Nanjing 62
Jacksonville 61
Chicago 59
The Dalles 59
Council Bluffs 58
Los Angeles 58
Jakarta 52
Dresden 49
Hanoi 48
Lauterbourg 42
Rome 42
Dallas 39
Shanghai 30
Buffalo 28
Altamura 27
Seoul 26
Lausanne 24
São Paulo 23
Moscow 21
Basingstoke 19
Boardman 19
Lawrence 19
Hangzhou 18
Helsinki 18
Nanchang 16
Guangzhou 15
Saclay 14
San Diego 14
Columbus 13
Lahore 13
London 13
Ottawa 12
Sacramento 12
Tokyo 12
Brooklyn 11
Brussels 11
Orem 11
Pune 11
Rio de Janeiro 11
Changsha 10
Marburg 10
Montreal 10
Phoenix 10
Shenyang 10
Tianjin 10
Chatou 9
Chennai 9
Da Nang 9
Düsseldorf 9
Haiphong 9
Mumbai 9
Ningbo 9
Norwalk 9
Turin 9
Brasília 8
Dhaka 8
Hefei 8
Kunming 8
Turku 8
Baghdad 7
Belo Horizonte 7
Eindhoven 7
Grafing 7
Jinan 7
Lachine 7
Amsterdam 6
Andover 6
Ardea 6
Bangkok 6
Bologna 6
Chittagong 6
Istanbul 6
Jiaxing 6
Johannesburg 6
Lanzhou 6
Naples 6
Totale 6.572
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Nome #
Competition Between Kinetics and Thermodynamics During the Growth of Faceted Crystal by Phase Field Modeling 461
Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study 454
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires 430
Self-Assembly of Nanovoids in Si Microcrystals Epitaxially Grown on Deeply Patterned Substrates 425
Modeling of 3D heteroepitaxial structures by continuum approaches 383
Growth and coalescence of 3c-sic on si(111) micro-pillars by a phase-field approach 330
Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment 327
Strain engineering in Ge/GeSn core/shell nanowires 296
Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting 285
Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars 271
Dynamics of pit filling in heteroepitaxy via phase-field simulations 259
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires 259
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture 256
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals 250
Phase-field modeling of the morphological evolution of ringlike structures during growth: Thermodynamics, kinetics, and template effects 250
Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1-xP Core-Shell Nanowires 248
Modelling the kinetic growth mode of GaAs nanomembranes 246
Continuum modeling of heteroepitaxial growth on silicon: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing. 244
Continuum modeling of heteroepitaxial growth in semiconductors 244
Twofold origin of strain-induced bending in core-shell nanowires: the GaP/InGaP case 239
Kinetic growth modeling of 3C-SiC micro-crystals on Si pillars 239
Heteroepitaxy of 3C-SiC/Si on deeply patterned substrates 239
Kinetic growth and surface faceting of vertical micro- and nano-structures: theory and experiments 235
Phase‐Field modeling of semiconductor heteroepitaxy: elastic relaxation, surface energy minimization and intermixing 233
Morphological evolution and compositional segregation effects in core-shell nanowires 229
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD 223
Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing 219
Morphological evolution via surface diffusion learned by convolutional, recurrent neural networks: Extrapolation and prediction uncertainty 211
Faceting of Equilibrium and Metastable Nano- and Micro- structures: A Phase-Field Model of Surface Diffusion Tackling Realistic Shapes 207
Phase-field modelling of compositional segregation during the growth of core-shell nanowires 206
Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments 206
Modeling the kinetic-driven morphological evolution in the 3D epitaxy of semiconductor micro- and nano-structures 202
Strain and strain-driven effects in coaxial nanowires 201
Modeling semiconductor heteroepitaxy: a continuum approach 198
Strain relaxation in semiconductor core/shell nanowires 189
Dynamics of pit filling in heteroepitaxy via phase-field simulations 187
The interplay of morphology, composition and strain in metastable Ge/GeSn core/shell nanowires 178
Understanding the kinetics segregation in core-shell nanowires: a phase-field approach 175
Stress engineering of boron doped diamond thin films via micro-fabrication 172
Modelling the kinetic growth and faceting of vertical micro- and nano-structures on Si 157
Continuum model of out-of-equilibrium crystal growth: theory and experiments 140
Totale 10.403
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Categoria #
all - tutte 32.692
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 32.692
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021190 0 0 0 0 0 0 0 0 0 0 0 190
2021/20221.125 113 98 155 137 83 60 56 61 51 94 84 133
2022/20231.083 124 244 132 125 92 169 6 48 67 21 24 31
2023/2024567 26 37 22 15 94 138 101 16 34 5 19 60
2024/20251.471 77 235 99 58 113 101 98 85 113 222 86 184
2025/20263.199 285 178 282 180 325 166 570 181 282 252 228 270
Totale 10.403