DE CESARI, SEBASTIANO
 Distribuzione geografica
Continente #
NA - Nord America 1.352
EU - Europa 784
AS - Asia 311
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 2.449
Nazione #
US - Stati Uniti d'America 1.328
CN - Cina 153
DE - Germania 133
AT - Austria 119
IT - Italia 108
SE - Svezia 88
IE - Irlanda 76
RU - Federazione Russa 65
GB - Regno Unito 61
VN - Vietnam 60
UA - Ucraina 32
DK - Danimarca 29
HK - Hong Kong 26
FR - Francia 25
CA - Canada 24
IN - India 22
SG - Singapore 22
PL - Polonia 17
JP - Giappone 14
BE - Belgio 13
FI - Finlandia 12
TR - Turchia 9
NL - Olanda 4
TW - Taiwan 3
ID - Indonesia 2
BG - Bulgaria 1
ES - Italia 1
EU - Europa 1
NZ - Nuova Zelanda 1
Totale 2.449
Città #
Ann Arbor 357
Chandler 139
Vienna 119
Woodbridge 113
Frankfurt am Main 100
Wilmington 88
Dearborn 80
Fairfield 75
Dublin 72
Ashburn 59
Houston 59
Jacksonville 59
New York 44
Nanjing 38
Cambridge 36
Milan 34
Princeton 34
Dong Ket 27
Hong Kong 26
Seattle 24
Shanghai 21
Kraków 16
Singapore 15
Brussels 13
Nanchang 11
Beijing 10
Lachine 10
Altamura 9
Dallas 9
Hebei 9
Hangzhou 8
Jinan 8
Shenyang 8
Toronto 8
London 7
Tianjin 7
Boardman 6
Falls Church 6
Kunming 6
Andover 5
Changsha 5
Lawrence 5
Washington 5
Cagliari 4
Edmonton 4
Guangzhou 4
Frankfurt An Der Oder 3
Fuzhou 3
Hefei 3
Los Angeles 3
Mountain View 3
Norwalk 3
Oakland 3
Rome 3
San Diego 3
Secaucus 3
Taipei 3
Tokyo 3
Zhengzhou 3
Adachi 2
Ardea 2
Baotou 2
Battersea 2
Dresden 2
Fremont 2
Galliate 2
Haikou 2
Jakarta 2
Orsay 2
Ottawa 2
Potenza Picena 2
Sacramento 2
Santa Clara 2
Trieste 2
Warwick 2
Amsterdam 1
Auburn Hills 1
Auckland 1
Bangalore 1
Bergamo 1
Berlin 1
Bovezzo 1
Chester 1
Corbetta 1
Florence 1
Glasgow 1
Hachiōji 1
Helsinki 1
Lanzhou 1
Manchester 1
Mariano Comense 1
Munich 1
Nagoya 1
Osaka 1
Oviedo 1
Pisa 1
Pune 1
Redmond 1
Sofia 1
Taizhou 1
Totale 1.898
Nome #
Spin-coherent dynamics and carrier lifetime in strained Ge1-xSnx semiconductors on silicon 318
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 196
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 188
Optically reconfigurable polarized emission in Germanium 188
Optical Orientation of Spins in Ge/SiGe Multiple Quantum Wells grown (111) Si Substrate 185
Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon 180
Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon 169
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 163
Progress towards spin-based light emission in group iv semiconductors 134
All-Optical Switching of Photon Helicity at Direct-gap Transition in Germanium 133
Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures. 133
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 122
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 121
Spin-resolved study of direct band-gap recombination in bulk Ge 111
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence 110
Spin Properties of Germanium-based Heterostructures 105
Radiative recombination and optical spin orientation in GeSn epitaxial layers 100
Totale 2.656
Categoria #
all - tutte 7.179
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.179


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020456 0 32 32 33 45 67 81 33 41 56 31 5
2020/2021418 13 15 46 44 43 44 31 25 31 28 18 80
2021/2022177 23 22 4 9 6 15 11 11 17 18 14 27
2022/2023448 35 134 61 47 30 61 0 26 29 3 10 12
2023/2024261 8 7 6 15 40 82 42 8 18 5 6 24
2024/202547 27 20 0 0 0 0 0 0 0 0 0 0
Totale 2.656