DE CESARI, SEBASTIANO
 Distribuzione geografica
Continente #
NA - Nord America 1.339
EU - Europa 750
AS - Asia 281
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 2.372
Nazione #
US - Stati Uniti d'America 1.315
CN - Cina 147
DE - Germania 133
AT - Austria 119
IT - Italia 107
SE - Svezia 88
IE - Irlanda 76
GB - Regno Unito 61
VN - Vietnam 60
RU - Federazione Russa 32
UA - Ucraina 32
DK - Danimarca 29
HK - Hong Kong 26
FR - Francia 25
CA - Canada 24
IN - India 22
PL - Polonia 17
JP - Giappone 14
BE - Belgio 13
FI - Finlandia 12
TR - Turchia 9
NL - Olanda 4
TW - Taiwan 3
BG - Bulgaria 1
ES - Italia 1
EU - Europa 1
NZ - Nuova Zelanda 1
Totale 2.372
Città #
Ann Arbor 357
Chandler 139
Vienna 119
Woodbridge 113
Frankfurt am Main 100
Wilmington 88
Dearborn 80
Fairfield 75
Dublin 72
Ashburn 59
Houston 59
Jacksonville 59
New York 44
Nanjing 38
Cambridge 36
Princeton 34
Milan 33
Dong Ket 27
Hong Kong 26
Seattle 24
Kraków 16
Shanghai 15
Brussels 13
Nanchang 11
Beijing 10
Lachine 10
Altamura 9
Hebei 9
Hangzhou 8
Jinan 8
Shenyang 8
Toronto 8
London 7
Tianjin 7
Boardman 6
Falls Church 6
Kunming 6
Andover 5
Changsha 5
Lawrence 5
Washington 5
Cagliari 4
Edmonton 4
Guangzhou 4
Frankfurt An Der Oder 3
Fuzhou 3
Hefei 3
Los Angeles 3
Mountain View 3
Norwalk 3
Oakland 3
Rome 3
San Diego 3
Secaucus 3
Taipei 3
Tokyo 3
Zhengzhou 3
Adachi 2
Ardea 2
Baotou 2
Battersea 2
Dresden 2
Fremont 2
Galliate 2
Haikou 2
Orsay 2
Ottawa 2
Potenza Picena 2
Sacramento 2
Trieste 2
Warwick 2
Amsterdam 1
Auburn Hills 1
Auckland 1
Bangalore 1
Bergamo 1
Berlin 1
Bovezzo 1
Chester 1
Corbetta 1
Florence 1
Glasgow 1
Hachiōji 1
Helsinki 1
Lanzhou 1
Manchester 1
Mariano Comense 1
Munich 1
Nagoya 1
Osaka 1
Oviedo 1
Pisa 1
Pune 1
Redmond 1
Sofia 1
Taizhou 1
Toulouse 1
Vicenza 1
Wandsworth 1
West Lafayette 1
Totale 1.867
Nome #
Spin-coherent dynamics and carrier lifetime in strained Ge1-xSnx semiconductors on silicon 313
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 193
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 184
Optical Orientation of Spins in Ge/SiGe Multiple Quantum Wells grown (111) Si Substrate 180
Optically reconfigurable polarized emission in Germanium 180
Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon 176
Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon 166
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 159
Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures. 131
All-Optical Switching of Photon Helicity at Direct-gap Transition in Germanium 128
Progress towards spin-based light emission in group iv semiconductors 128
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 118
Spin-dependent direct gap emission in tensile-strained Ge-on-Si heterostructures 117
Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence 108
Spin-resolved study of direct band-gap recombination in bulk Ge 106
Spin Properties of Germanium-based Heterostructures 97
Radiative recombination and optical spin orientation in GeSn epitaxial layers 95
Totale 2.579
Categoria #
all - tutte 6.298
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.298


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019101 0 0 0 0 0 0 0 0 0 0 41 60
2019/2020521 65 32 32 33 45 67 81 33 41 56 31 5
2020/2021418 13 15 46 44 43 44 31 25 31 28 18 80
2021/2022177 23 22 4 9 6 15 11 11 17 18 14 27
2022/2023448 35 134 61 47 30 61 0 26 29 3 10 12
2023/2024231 8 7 6 15 40 82 42 8 18 5 0 0
Totale 2.579