VASTOLA, GUGLIELMO
VASTOLA, GUGLIELMO
DIPARTIMENTO DI SCIENZA DEI MATERIALI (attivo dal 01/01/1998 al 30/09/2012)
Integration of MOSFETs with SiGe dots as stressor material
2011 Nanver, L; Jovanovic, V; Biasotto, C; Moers, J; Grützmacher, D; Zhang, J; Hrauda, N; Stoffel, M; Pezzoli, F; Schmidt, O; Miglio, L; Kosina, H; Marzegalli, A; Vastola, G; Mussler, G; Stangl, J; Bauer, G; Cingel, J; Bonera, E
Strained MOSFETs on ordered SiGe dots
2011 Cervenka, J; Kosina, H; Selberherr, S; Zhang, J; Hrauda, N; Stangl, J; Bauer, G; Vastola, G; Marzegalli, A; Montalenti, F; Miglio, L
Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands
2008 Vastola, G; Gatti, R; Marzegalli, A; Montalenti, F; Miglio, L
Accurate and analytical strain mapping at the surface of Ge/Si(001) islands by an improved flat-island approximation
2006 Zinovyev, V; Vastola, G; Montalenti, F; Miglio, L
Self-ordering of a Ge island single layer induced by Si overgrowth
2006 Capellini, G; De Seta, M; Evangelisti, F; Zinovyev, V; Vastola, G; Montalenti, F; Miglio, L
Spontaneous Ge island ordering promoted by partial silicon capping
2006 De Seta, M; Capellini, G; Evangelisti, F; Zinovyev, V; Vastola, G; Montalenti, F; Miglio, L