LAMAGNA, LUCA
 Distribuzione geografica
Continente #
NA - Nord America 655
EU - Europa 311
AS - Asia 176
AF - Africa 1
Totale 1.143
Nazione #
US - Stati Uniti d'America 637
DE - Germania 59
IT - Italia 58
CN - Cina 55
SE - Svezia 40
IE - Irlanda 36
SG - Singapore 35
UA - Ucraina 32
RU - Federazione Russa 31
HK - Hong Kong 29
GB - Regno Unito 24
CA - Canada 17
VN - Vietnam 16
FI - Finlandia 13
KR - Corea 10
IN - India 8
JP - Giappone 7
BE - Belgio 5
FR - Francia 5
NL - Olanda 5
TR - Turchia 5
TW - Taiwan 4
IR - Iran 3
PK - Pakistan 2
BZ - Belize 1
CH - Svizzera 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
EG - Egitto 1
ID - Indonesia 1
PH - Filippine 1
Totale 1.143
Città #
Ann Arbor 103
Woodbridge 86
Fairfield 62
Chandler 56
Frankfurt am Main 36
Houston 34
Jacksonville 34
Dublin 33
Wilmington 31
Singapore 28
Ashburn 27
Seattle 25
Hong Kong 24
Cambridge 22
Milan 16
Princeton 16
Santa Clara 14
Dearborn 13
Nanjing 13
Dong Ket 12
New York 8
Lachine 7
Lawrence 7
Altamura 6
San Diego 6
Beijing 5
Brussels 5
London 5
Ottawa 5
Toronto 5
Amsterdam 4
Bolu 4
Cagliari 4
Dayton 4
Duncan 4
Hebei 4
Shanghai 4
Changsha 3
Hsinchu 3
Jiaxing 3
Lappeenranta 3
Los Angeles 3
Mountain View 3
Nanchang 3
Scuola 3
Seongdong-gu 3
Seoul 3
Taizhou 3
Andover 2
Boardman 2
Chemnitz 2
Glasgow 2
Helsinki 2
Higashisendai 2
Hyderabad 2
Jinan 2
Padova 2
Palermo 2
Rome 2
Shenzhen 2
Sialkot 2
Urgnano 2
Xian 2
Yokohama 2
Évry 2
Bari 1
Belize City 1
Benevento 1
Berkeley 1
Chicago 1
Chiyoda-ku 1
Clearwater 1
Daegu 1
Dallas 1
Delhi 1
Dubendorf 1
Erlangen 1
Fagnano Olona 1
Falls Church 1
Ferrara 1
Freiberg 1
Fuzhou 1
Genoa 1
Guangzhou 1
Hangyang 1
Hangzhou 1
Hefei 1
Huizen 1
Isfahan 1
Jakarta 1
Kashan 1
Lahti 1
Legnano 1
Lombard 1
Medford 1
Menlo Park 1
Monza 1
Mumbai 1
Newark 1
Ningbo 1
Totale 874
Nome #
Atomic layer deposition and characterization of rare earth oxides for innovation in microelectronics 237
Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interface 156
Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode 147
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As 138
Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications 135
Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics 111
Concept design of the LiteBIRD satellite for CMB B-mode polarization 110
Thermal stability of high-kappa oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories 108
Protective coatings of hafnium dioxide by atomic layer deposition for microelectromechanical systems applications 15
Totale 1.157
Categoria #
all - tutte 3.969
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.969


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020123 0 0 0 0 16 15 26 15 29 6 14 2
2020/2021114 12 4 14 16 3 5 8 7 7 11 5 22
2021/202288 7 9 20 2 3 7 4 4 7 4 5 16
2022/2023224 18 62 26 14 19 36 2 13 20 6 6 2
2023/2024123 7 5 3 6 19 24 13 8 16 4 5 13
2024/2025116 26 34 14 22 20 0 0 0 0 0 0 0
Totale 1.157