LAMAGNA, LUCA
 Distribuzione geografica
Continente #
NA - Nord America 621
EU - Europa 274
AS - Asia 116
AF - Africa 1
Totale 1.012
Nazione #
US - Stati Uniti d'America 603
DE - Germania 57
IT - Italia 54
CN - Cina 49
SE - Svezia 40
IE - Irlanda 36
UA - Ucraina 32
GB - Regno Unito 22
HK - Hong Kong 20
CA - Canada 17
VN - Vietnam 16
FI - Finlandia 10
JP - Giappone 7
RU - Federazione Russa 7
KR - Corea 6
BE - Belgio 5
NL - Olanda 5
TR - Turchia 5
FR - Francia 4
IN - India 3
IR - Iran 3
TW - Taiwan 3
PK - Pakistan 2
BZ - Belize 1
CH - Svizzera 1
DK - Danimarca 1
EG - Egitto 1
PH - Filippine 1
SG - Singapore 1
Totale 1.012
Città #
Ann Arbor 103
Woodbridge 86
Fairfield 62
Chandler 56
Frankfurt am Main 36
Houston 34
Jacksonville 34
Dublin 33
Wilmington 31
Ashburn 26
Seattle 25
Cambridge 22
Hong Kong 20
Princeton 16
Milan 15
Dearborn 13
Nanjing 13
Dong Ket 12
New York 8
Lachine 7
Lawrence 7
Altamura 6
San Diego 6
Beijing 5
Brussels 5
London 5
Ottawa 5
Toronto 5
Amsterdam 4
Bolu 4
Cagliari 4
Dayton 4
Duncan 4
Hebei 4
Changsha 3
Hsinchu 3
Jiaxing 3
Los Angeles 3
Mountain View 3
Nanchang 3
Scuola 3
Seongdong-gu 3
Taizhou 3
Andover 2
Boardman 2
Chemnitz 2
Higashisendai 2
Jinan 2
Padova 2
Palermo 2
Rome 2
Shanghai 2
Shenzhen 2
Sialkot 2
Urgnano 2
Xian 2
Yokohama 2
Évry 2
Belize City 1
Benevento 1
Berkeley 1
Chicago 1
Chiyoda-ku 1
Clearwater 1
Delhi 1
Dubendorf 1
Fagnano Olona 1
Falls Church 1
Ferrara 1
Freiberg 1
Fuzhou 1
Hangyang 1
Hangzhou 1
Hefei 1
Helsinki 1
Huizen 1
Isfahan 1
Kashan 1
Lahti 1
Lappeenranta 1
Lombard 1
Medford 1
Menlo Park 1
Monza 1
Mumbai 1
Ningbo 1
Norwalk 1
Philadelphia 1
Pohang-si 1
Pune 1
Redmond 1
Reggio Nell'emilia 1
San Mateo 1
Santa Clara 1
Shenyang 1
Singapore 1
Taiyuan 1
Tappahannock 1
Tianjin 1
Tokyo 1
Totale 819
Nome #
Atomic layer deposition and characterization of rare earth oxides for innovation in microelectronics 197
Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interface 146
Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode 132
Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications 126
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As 125
Thermal stability of high-kappa oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories 100
Concept design of the LiteBIRD satellite for CMB B-mode polarization 99
Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics 98
Totale 1.023
Categoria #
all - tutte 2.974
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.974


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201952 0 0 0 0 0 0 0 0 0 0 26 26
2019/2020191 27 7 19 15 16 15 26 15 29 6 14 2
2020/2021114 12 4 14 16 3 5 8 7 7 11 5 22
2021/202288 7 9 20 2 3 7 4 4 7 4 5 16
2022/2023224 18 62 26 14 19 36 2 13 20 6 6 2
2023/2024105 7 5 3 6 19 24 13 8 16 4 0 0
Totale 1.023