LAMAGNA, LUCA
 Distribuzione geografica
Continente #
NA - Nord America 633
EU - Europa 304
AS - Asia 167
AF - Africa 1
Totale 1.105
Nazione #
US - Stati Uniti d'America 615
DE - Germania 59
IT - Italia 58
CN - Cina 54
SE - Svezia 40
IE - Irlanda 36
UA - Ucraina 32
SG - Singapore 30
HK - Hong Kong 28
GB - Regno Unito 24
RU - Federazione Russa 24
CA - Canada 17
VN - Vietnam 16
FI - Finlandia 13
KR - Corea 9
IN - India 8
JP - Giappone 7
BE - Belgio 5
FR - Francia 5
NL - Olanda 5
TR - Turchia 5
IR - Iran 3
TW - Taiwan 3
PK - Pakistan 2
BZ - Belize 1
CH - Svizzera 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
EG - Egitto 1
ID - Indonesia 1
PH - Filippine 1
Totale 1.105
Città #
Ann Arbor 103
Woodbridge 86
Fairfield 62
Chandler 56
Frankfurt am Main 36
Houston 34
Jacksonville 34
Dublin 33
Wilmington 31
Ashburn 26
Seattle 25
Hong Kong 23
Singapore 23
Cambridge 22
Milan 16
Princeton 16
Dearborn 13
Nanjing 13
Dong Ket 12
New York 8
Lachine 7
Lawrence 7
Altamura 6
San Diego 6
Beijing 5
Brussels 5
London 5
Ottawa 5
Toronto 5
Amsterdam 4
Bolu 4
Cagliari 4
Dayton 4
Duncan 4
Hebei 4
Shanghai 4
Changsha 3
Hsinchu 3
Jiaxing 3
Lappeenranta 3
Los Angeles 3
Mountain View 3
Nanchang 3
Santa Clara 3
Scuola 3
Seongdong-gu 3
Seoul 3
Taizhou 3
Andover 2
Boardman 2
Chemnitz 2
Glasgow 2
Helsinki 2
Higashisendai 2
Hyderabad 2
Jinan 2
Padova 2
Palermo 2
Rome 2
Shenzhen 2
Sialkot 2
Urgnano 2
Xian 2
Yokohama 2
Évry 2
Bari 1
Belize City 1
Benevento 1
Berkeley 1
Chicago 1
Chiyoda-ku 1
Clearwater 1
Dallas 1
Delhi 1
Dubendorf 1
Erlangen 1
Fagnano Olona 1
Falls Church 1
Ferrara 1
Freiberg 1
Fuzhou 1
Genoa 1
Guangzhou 1
Hangyang 1
Hangzhou 1
Hefei 1
Huizen 1
Isfahan 1
Jakarta 1
Kashan 1
Lahti 1
Legnano 1
Lombard 1
Medford 1
Menlo Park 1
Monza 1
Mumbai 1
Ningbo 1
Norwalk 1
Olomouc 1
Totale 856
Nome #
Atomic layer deposition and characterization of rare earth oxides for innovation in microelectronics 228
Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interface 151
Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode 143
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0.53Ga0.47As 133
Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications 132
Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics 108
Concept design of the LiteBIRD satellite for CMB B-mode polarization 107
Thermal stability of high-kappa oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories 105
Protective coatings of hafnium dioxide by atomic layer deposition for microelectromechanical systems applications 12
Totale 1.119
Categoria #
all - tutte 3.745
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.745


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020138 0 0 0 15 16 15 26 15 29 6 14 2
2020/2021114 12 4 14 16 3 5 8 7 7 11 5 22
2021/202288 7 9 20 2 3 7 4 4 7 4 5 16
2022/2023224 18 62 26 14 19 36 2 13 20 6 6 2
2023/2024123 7 5 3 6 19 24 13 8 16 4 5 13
2024/202578 26 34 14 4 0 0 0 0 0 0 0 0
Totale 1.119