BALDOVINO, SILVIA
 Distribuzione geografica
Continente #
NA - Nord America 785
EU - Europa 348
AS - Asia 189
SA - Sud America 5
AF - Africa 1
Totale 1.328
Nazione #
US - Stati Uniti d'America 760
FR - Francia 74
CN - Cina 69
SG - Singapore 68
RU - Federazione Russa 57
DE - Germania 39
UA - Ucraina 39
GB - Regno Unito 33
IT - Italia 28
SE - Svezia 28
IE - Irlanda 27
VN - Vietnam 25
CA - Canada 24
HK - Hong Kong 21
FI - Finlandia 8
BR - Brasile 5
BE - Belgio 4
DK - Danimarca 4
AT - Austria 2
NL - Olanda 2
BD - Bangladesh 1
ID - Indonesia 1
IQ - Iraq 1
IR - Iran 1
LT - Lituania 1
MX - Messico 1
PK - Pakistan 1
PL - Polonia 1
RO - Romania 1
TR - Turchia 1
ZA - Sudafrica 1
Totale 1.328
Città #
Ann Arbor 117
Houston 79
Fairfield 77
Woodbridge 71
Ashburn 60
Jacksonville 46
Singapore 43
Wilmington 39
Chandler 35
Seattle 29
Dublin 27
Cambridge 26
Dearborn 25
Frankfurt am Main 23
New York 23
Hong Kong 21
Princeton 16
Dong Ket 13
San Diego 13
Shanghai 13
Nanjing 12
Altamura 11
Toronto 11
Moscow 10
Santa Clara 9
Lachine 8
Lawrence 8
Beijing 7
Hebei 6
Milan 6
Andover 5
Changsha 4
Los Angeles 4
Rome 4
Shenyang 4
Brussels 3
Mountain View 3
Ottawa 3
Paris 3
Guangzhou 2
Jiaxing 2
Jinan 2
Newark 2
Nuremberg 2
Perugia 2
Almirante Tamandaré 1
Amsterdam 1
Asti 1
Baghdad 1
Baturité 1
Candia Lomellina 1
Copenhagen 1
Edmonton 1
Haikou 1
Hangzhou 1
Hefei 1
Huizen 1
Innsbruck 1
Islamabad 1
Jakarta 1
Kocaeli 1
Kunming 1
Leuven 1
Maringá 1
Nanchang 1
Ningbo 1
Norwalk 1
Petilia Policastro 1
Phoenix 1
Qingzhou 1
Ribeirão Preto 1
Romola 1
Secaucus 1
Shenzhen 1
Sorocaba 1
The Dalles 1
Tianjin 1
University Park 1
Vienna 1
Washington 1
Weifang 1
Zhengzhou 1
Totale 966
Nome #
Electrically Detected Magnetic Resonance of Donors and Interfacial Defects in Silicon Nanowires 321
High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors 175
Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer 162
Influence of the oxidation temperature on the non-trigonal Ge dangling bonds at the (100)Ge/GeO2 interface 160
Influence of the oxidizing species on the Ge dangling bonds at the (100)Ge/GeO2 interface 158
Chemical nature of the passivation layer depending on the oxidizing agent in Gd2O3/GeO2/Ge stacks grown by molecular beam deposition 141
Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics 132
Magnetic resonance spectroscopy of defects at the dielectric-semiconductor interface: Ge substrates and Si nanowires 114
Totale 1.363
Categoria #
all - tutte 5.044
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.044


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202024 0 0 0 0 0 0 0 0 0 0 21 3
2020/2021132 12 6 18 17 2 2 8 5 11 18 5 28
2021/2022113 2 9 25 3 2 11 29 2 9 2 8 11
2022/2023158 16 43 22 6 8 23 3 12 12 8 2 3
2023/2024109 3 1 1 1 13 27 14 9 15 4 3 18
2024/2025278 19 38 15 21 28 14 10 22 40 46 25 0
Totale 1.363