BALDOVINO, SILVIA
 Distribuzione geografica
Continente #
NA - Nord America 742
EU - Europa 282
AS - Asia 145
AF - Africa 1
Totale 1.170
Nazione #
US - Stati Uniti d'America 719
CN - Cina 67
FR - Francia 46
UA - Ucraina 38
SG - Singapore 36
GB - Regno Unito 33
DE - Germania 32
RU - Federazione Russa 29
IT - Italia 28
SE - Svezia 28
IE - Irlanda 27
VN - Vietnam 25
CA - Canada 23
HK - Hong Kong 14
FI - Finlandia 8
BE - Belgio 4
DK - Danimarca 4
AT - Austria 2
NL - Olanda 2
ID - Indonesia 1
IR - Iran 1
PL - Polonia 1
TR - Turchia 1
ZA - Sudafrica 1
Totale 1.170
Città #
Ann Arbor 117
Houston 79
Fairfield 77
Woodbridge 71
Jacksonville 46
Wilmington 39
Ashburn 35
Chandler 35
Singapore 33
Seattle 29
Dublin 27
Cambridge 26
Dearborn 25
Frankfurt am Main 22
New York 22
Princeton 16
Hong Kong 14
Dong Ket 13
San Diego 13
Shanghai 13
Nanjing 12
Altamura 11
Toronto 11
Lachine 8
Lawrence 8
Beijing 7
Santa Clara 7
Hebei 6
Milan 6
Andover 5
Rome 4
Shenyang 4
Brussels 3
Changsha 3
Los Angeles 3
Mountain View 3
Ottawa 3
Paris 3
Jiaxing 2
Jinan 2
Perugia 2
Amsterdam 1
Asti 1
Candia Lomellina 1
Copenhagen 1
Edmonton 1
Guangzhou 1
Haikou 1
Hangzhou 1
Hefei 1
Huizen 1
Innsbruck 1
Jakarta 1
Kocaeli 1
Kunming 1
Leuven 1
Moscow 1
Nanchang 1
Newark 1
Ningbo 1
Norwalk 1
Petilia Policastro 1
Phoenix 1
Qingzhou 1
Romola 1
Shenzhen 1
Tianjin 1
University Park 1
Vienna 1
Washington 1
Weifang 1
Zhengzhou 1
Totale 896
Nome #
Electrically Detected Magnetic Resonance of Donors and Interfacial Defects in Silicon Nanowires 276
High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors 159
Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer 148
Influence of the oxidizing species on the Ge dangling bonds at the (100)Ge/GeO2 interface 145
Influence of the oxidation temperature on the non-trigonal Ge dangling bonds at the (100)Ge/GeO2 interface 143
Chemical nature of the passivation layer depending on the oxidizing agent in Gd2O3/GeO2/Ge stacks grown by molecular beam deposition 120
Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics 111
Magnetic resonance spectroscopy of defects at the dielectric-semiconductor interface: Ge substrates and Si nanowires 103
Totale 1.205
Categoria #
all - tutte 4.224
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.224


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020166 0 0 0 0 24 28 39 16 23 12 21 3
2020/2021132 12 6 18 17 2 2 8 5 11 18 5 28
2021/2022113 2 9 25 3 2 11 29 2 9 2 8 11
2022/2023158 16 43 22 6 8 23 3 12 12 8 2 3
2023/2024109 3 1 1 1 13 27 14 9 15 4 3 18
2024/2025120 19 38 15 21 27 0 0 0 0 0 0 0
Totale 1.205