Czochralski-grown dislocation-free silicon is used in the semiconductor industry almost exclusively for manufacturing VLSI devices. Such material contains small quantities (similar to20 ppm) of dissolved oxygen, which can have a crucial effect on the properties of produced devices. Therefore it is of great importance to study its precipitation in a silicon matrix after given thermal treatment. The small angle X-ray scattering (SAXS) technique was used to study oxygen precipitation in monocrystalline silicon samples. We used 8 and 16 keV radiation to overcome the high absorption at low energies. A series of samples has been prepared with controlled sequence of oxygen nucleation and precipitation phase and measured with SAXS. It is shown that this low contrast changes in standard wafers can be investigated using synchrotron radiation. (C) 2002 Elsevier Science B.V. All rights reserved.

Pivac, B., Dubcek, P., Bernstorff, S., Borghesi, A., Sassella, A., Porrini, M. (2003). Small angle X-ray scattering study of oxygen precipitation in silicon. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 200, 105-109 [10.1016/S0168-583X(02)01704-4].

Small angle X-ray scattering study of oxygen precipitation in silicon

BORGHESI, ALESSANDRO;SASSELLA, ADELE;
2003

Abstract

Czochralski-grown dislocation-free silicon is used in the semiconductor industry almost exclusively for manufacturing VLSI devices. Such material contains small quantities (similar to20 ppm) of dissolved oxygen, which can have a crucial effect on the properties of produced devices. Therefore it is of great importance to study its precipitation in a silicon matrix after given thermal treatment. The small angle X-ray scattering (SAXS) technique was used to study oxygen precipitation in monocrystalline silicon samples. We used 8 and 16 keV radiation to overcome the high absorption at low energies. A series of samples has been prepared with controlled sequence of oxygen nucleation and precipitation phase and measured with SAXS. It is shown that this low contrast changes in standard wafers can be investigated using synchrotron radiation. (C) 2002 Elsevier Science B.V. All rights reserved.
Articolo in rivista - Articolo scientifico
silicon; defects; oxygen; SAXS
English
gen-2003
200
105
109
none
Pivac, B., Dubcek, P., Bernstorff, S., Borghesi, A., Sassella, A., Porrini, M. (2003). Small angle X-ray scattering study of oxygen precipitation in silicon. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 200, 105-109 [10.1016/S0168-583X(02)01704-4].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/8015
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