SASSELLA, ADELE
SASSELLA, ADELE
DIPARTIMENTO DI SCIENZA DEI MATERIALI
Quantitative determination of high-temperature oxygen microprecipitates in Czochralski silicon by micro-Fourier transform infrared spectroscopy
1991 Borghesi, A; Geddo, M; Pivac, B; Sassella, A; Stella, A
Interaction of ambient gas and meniscus surface during growth of edge-defined film-fed growth polycrystalline silicon samples
1991 Pivac, B; Borghesi, A; Sassella, A; Ottolini, L; Kalejs, J
Properties of borophosphosilicate glass films deposited by different chemical vapor deposition techniques
1992 Rojas, S; Gomarasca, R; Zanotti, L; Borghesi, A; Sassella, A; Ottaviani, G; Moro, L; Lazzeri, P
Infrared determination of interstitial oxygen behavior during epitaxial silicon growth on Czochralski substrates
1992 Geddo, M; Pivac, B; Sassella, A; Stella, A; Borghesi, A; Maierna, A
Polarization effect on infrared absorption of oxygen precipitates in silicon
1992 Borghesi, A; Pivac, B; Sassella, A
Infrared study of oxygen precipitate composition in silicon
1992 Borghesi, A; Piaggi, A; Sassella, A; Stella, A; Pivac, B
Effect of annealing on carbon concentration in edge-defined film-fed grown polycrystalline silicon
1992 Pivac, B; Amiotti, M; Borghesi, A; Sassella, A; Kalejs, J
Boron accumulation at epi-substrate silicon interface during epitaxial growth
1992 Pivac, B; Borghesi, A; Geddo, M; Sassella, A; Pedrotti, M
Magnetization and magnetic susceptibility of the diluted magnetic semiconductor Cd1−xMnxGa2Se4
1993 Chen, C; Ma, Y; Li, Y; Wang, X; Borghesi, A; Guizzetti, G; Sassella, A; Viticoli, S
Ellipsometric characterization of hydrogen-rich oxynitride films
1993 Borghesi, A; Sassella, A; Rojas, S
Oxygen precipitates in short-time annealed Czochralski silicon
1993 Borghesi, A; Pivac, B; Sassella, A
Optical characterization of oxynitride films in the visible-ultraviolet range
1993 Borghesi, A; Bellandi, E; Guizzetti, G; Sassella, A; Rojas, S; Zanotti, L
Characterization of silicon dioxide and phosphosilicate glass deposited films
1993 Rojas, S; Zanotti, L; Borghesi, A; Sassella, A; Pignatel, G
Characterization of porous silicon inhomogeneities by high spatial resolution infrared spectroscopy
1993 Borghesi, A; Sassella, A; Pivac, B; Pavesi, L
In situ Cr gettering in polycrystalline silicon sheets obtained by edge-defined film-fed growth
1993 Pivac, B; Borghesi, A; Sassella, A; Kalejs, J; Bathey, B
Stoichiometry of oxygen precipitates in silicon
1993 Pivac, B; Borghesi, A; Geddo, M; Sassella, A; Stella, A
Tetrahedron model for the optical dielectric function of H-rich silicon oxynitride
1993 Sassella, A
Homogeneity of carbon microdistribution in edge-defined film-fed grown polycrystalline silicon
1993 Pivac, B; Borghesi, A; Amiotti, M; Sassella, A
Spectroscopic ellipsometry study of the relaxation state of amorphous silicon
1993 Reitano, R; Grimaldi, M; Baeri, P; Borghesi, A; Sassella, A
Spectroscopic study of SiC-like structures formed on polycrystalline silicon sheets during growth
1994 Pivac, B; Furić, K; Milun, M; Valla, T; Borghesi, A; Sassella, A