Raman spectroscopy is applied to the study of the structure of polycrystalline silicon films. The analysis of the transversal optical phonon Raman line shows its complex structure consisting of two dominant contributions, centered at about 519 and 517 cm(-1) and attributed to two dominant groups of grains with different size. The profile of this Raman line is demonstrated to give deeper information about the film morphology, directly influenced by the deposition temperature in terms of the ratio of amorphous to crystalline phases, as well as the grain-size distribution, and the film stress. (C) 1999 American Institute of Physics
Pivac, B., Furic, K., Desnica, D., Borghesi, A., Sassella, A. (1999). Raman line profile in polycrystalline silicon. JOURNAL OF APPLIED PHYSICS, 86(8), 4383-4386 [10.1063/1.371374].
Raman line profile in polycrystalline silicon
BORGHESI, ALESSANDRO;SASSELLA, ADELE
1999
Abstract
Raman spectroscopy is applied to the study of the structure of polycrystalline silicon films. The analysis of the transversal optical phonon Raman line shows its complex structure consisting of two dominant contributions, centered at about 519 and 517 cm(-1) and attributed to two dominant groups of grains with different size. The profile of this Raman line is demonstrated to give deeper information about the film morphology, directly influenced by the deposition temperature in terms of the ratio of amorphous to crystalline phases, as well as the grain-size distribution, and the film stress. (C) 1999 American Institute of Physics
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