The growth process of molecular thin films deposited on an interacting crystalline substrate by organic molecular-beam epitaxy is monitored in situ by reflectance anisotropy spectroscopy sRASd. From the RAS signal evolution measured during the early stages of deposition, evidence is found of two opposite growth modes, namely layer-by-layer and island modes, obtained when changing the supersaturation of the vapor phase on the substrate.

Sassella, A., Campione, M., Moret, M., Borghesi, A., Goletti, C., Bussetti, G., et al. (2005). Tuning of growth mode in molecular beam epitaxy. PHYSICAL REVIEW. B, RAPID COMMUNICATIONS, 71(20), 201311.1-201311.4 [10.1103/PhysRevB.71.201311].

Tuning of growth mode in molecular beam epitaxy

SASSELLA, ADELE;CAMPIONE, MARCELLO;MORET, MASSIMO;BORGHESI, ALESSANDRO;
2005

Abstract

The growth process of molecular thin films deposited on an interacting crystalline substrate by organic molecular-beam epitaxy is monitored in situ by reflectance anisotropy spectroscopy sRASd. From the RAS signal evolution measured during the early stages of deposition, evidence is found of two opposite growth modes, namely layer-by-layer and island modes, obtained when changing the supersaturation of the vapor phase on the substrate.
Articolo in rivista - Articolo scientifico
Organic semiconductors; organic molecular beam epitaxy; growth dynamics; reflectance anisotropy spectroscopy
English
Sassella, A., Campione, M., Moret, M., Borghesi, A., Goletti, C., Bussetti, G., et al. (2005). Tuning of growth mode in molecular beam epitaxy. PHYSICAL REVIEW. B, RAPID COMMUNICATIONS, 71(20), 201311.1-201311.4 [10.1103/PhysRevB.71.201311].
Sassella, A; Campione, M; Moret, M; Borghesi, A; Goletti, C; Bussetti, G; Chiaradia, P
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10281/7646
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