The growth process of molecular thin films deposited on an interacting crystalline substrate by organic molecular-beam epitaxy is monitored in situ by reflectance anisotropy spectroscopy sRASd. From the RAS signal evolution measured during the early stages of deposition, evidence is found of two opposite growth modes, namely layer-by-layer and island modes, obtained when changing the supersaturation of the vapor phase on the substrate.
Sassella, A., Campione, M., Moret, M., Borghesi, A., Goletti, C., Bussetti, G., et al. (2005). Tuning of growth mode in molecular beam epitaxy. PHYSICAL REVIEW. B, RAPID COMMUNICATIONS, 71(20), 201311.1-201311.4.
Citazione: | Sassella, A., Campione, M., Moret, M., Borghesi, A., Goletti, C., Bussetti, G., et al. (2005). Tuning of growth mode in molecular beam epitaxy. PHYSICAL REVIEW. B, RAPID COMMUNICATIONS, 71(20), 201311.1-201311.4. |
Tipo: | Articolo in rivista - Articolo scientifico |
Carattere della pubblicazione: | Scientifica |
Titolo: | Tuning of growth mode in molecular beam epitaxy |
Autori: | Sassella, A; Campione, M; Moret, M; Borghesi, A; Goletti, C; Bussetti, G; Chiaradia, P |
Autori: | |
Data di pubblicazione: | 2005 |
Lingua: | English |
Rivista: | PHYSICAL REVIEW. B, RAPID COMMUNICATIONS |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1103/PhysRevB.71.201311 |
Appare nelle tipologie: | 01 - Articolo su rivista |