EM-Assisted Open-Short De-Embedding Technique for 16-nm FinFET Technology

This work presents a mixed-mode de-embedding methodology designed to improve the accuracy of on-wafer S-parameter measurements in advanced FinFET technologies. The approach modifies the conventional Open-Short technique by physically implementing only the layout-robust portions of the Short structure, while the dominant Source impedance is obtained through dedicated EM simulations and removed analytically. This strategy avoids inaccuracies introduced by the non-ideal shorting paths imposed by 16−nm metal routing rules and multi-layer interconnect constraints. Experimental results from 1 to 125 GHz demonstrate that correcting the Source parasitic impedance using EM simulations instead of relying only on physical short significantly improves the physical consistency of the measured S-parameters across the entire frequency range, confirming the effectiveness of the proposed methodology for broadband device characterization in deeply scaled nodes.