The possible use of the absorption band at 1207 cm(-1) for the measurement of the concentration of interstitial oxygen (O-i) in silicon samples subjected to a precipitation thermal treatment is discussed. The results of low temperature infrared absorption measurements show that the conversion factor for such evaluation of the residual O-i after precipitation is strongly influenced by the presence of oxide precipitates; a limit value for the concentration of precipitated oxygen is identified, above which the measure becomes unreliable. (C) 2002 American Institute of Physics
Sassella, A., Borghesi, A., Porrini, M. (2002). Influence of oxygen precipitation on the measure of interstitial oxygen concentration in silicon from the 1207 cm(-1) infrared absorption band. JOURNAL OF APPLIED PHYSICS, 91(1), 166-170 [10.1063/1.1423393].
Influence of oxygen precipitation on the measure of interstitial oxygen concentration in silicon from the 1207 cm(-1) infrared absorption band
Sassella, A;Borghesi, A;
2002
Abstract
The possible use of the absorption band at 1207 cm(-1) for the measurement of the concentration of interstitial oxygen (O-i) in silicon samples subjected to a precipitation thermal treatment is discussed. The results of low temperature infrared absorption measurements show that the conversion factor for such evaluation of the residual O-i after precipitation is strongly influenced by the presence of oxide precipitates; a limit value for the concentration of precipitated oxygen is identified, above which the measure becomes unreliable. (C) 2002 American Institute of PhysicsI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.