The study of the optical behavior of oxygen in silicon is presented, based on infrared absorption measurements performed at liquid helium temperature. A total of six groups of silicon wafers characterized by different initial concentrations of interstitial oxygen from similar to 2 x 10(17) to similar to 10(18) atoms cm(-3) were analysed. The experimental conditions were chosen so as to distinguish the contributions from interstitial and precipitated oxygen, while the thermal treatment of the samples was studied in order to cause the growth of the grown-in precipitates. The relative concentrations of platelet and spheroid precipitates grown after the thermal treatment of the wafers are discussed. (C) 2000 Elsevier Science S.A. All rights reserved.

Borghesi, A., Sassella, A., Geranzani, P., Porrini, M., Pivac, B. (2000). Infrared characterization of oxygen precipitates in silicon wafers with different concentrations of interstitial oxygen. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 73(1/3), 145-148 [10.1016/S0921-5107(99)00459-6].

Infrared characterization of oxygen precipitates in silicon wafers with different concentrations of interstitial oxygen

BORGHESI, ALESSANDRO;SASSELLA, ADELE;
2000

Abstract

The study of the optical behavior of oxygen in silicon is presented, based on infrared absorption measurements performed at liquid helium temperature. A total of six groups of silicon wafers characterized by different initial concentrations of interstitial oxygen from similar to 2 x 10(17) to similar to 10(18) atoms cm(-3) were analysed. The experimental conditions were chosen so as to distinguish the contributions from interstitial and precipitated oxygen, while the thermal treatment of the samples was studied in order to cause the growth of the grown-in precipitates. The relative concentrations of platelet and spheroid precipitates grown after the thermal treatment of the wafers are discussed. (C) 2000 Elsevier Science S.A. All rights reserved.
Articolo in rivista - Articolo scientifico
silicon; interstitial oxygen; oxygen precipitation; infrared spectroscopy
English
2000
73
1/3
145
148
none
Borghesi, A., Sassella, A., Geranzani, P., Porrini, M., Pivac, B. (2000). Infrared characterization of oxygen precipitates in silicon wafers with different concentrations of interstitial oxygen. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 73(1/3), 145-148 [10.1016/S0921-5107(99)00459-6].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/5138
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