Optical absorption measurements are reported, carried out in the medium infrared range at liquid helium temperature on silicon wafers after different thermal treatments for oxygen precipitation. The low temperature spectra show a complex band structure where the contributions related to precipitates with different shapes can he distinguished and, in some cases, quantified on the basis of the results of an effective medium model. (C) 2000 Elsevier Science S.A. All rights reserved.
Sassella, A., Borghesi, A., Borionetti, G., Geranzani, P. (2000). Optical absorption of precipitated oxygen in silicon at liquid helium temperature. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 73(1-3), 224-229 [10.1016/S0921-5107(99)00468-7].
Optical absorption of precipitated oxygen in silicon at liquid helium temperature
SASSELLA, ADELE;BORGHESI, ALESSANDRO;
2000
Abstract
Optical absorption measurements are reported, carried out in the medium infrared range at liquid helium temperature on silicon wafers after different thermal treatments for oxygen precipitation. The low temperature spectra show a complex band structure where the contributions related to precipitates with different shapes can he distinguished and, in some cases, quantified on the basis of the results of an effective medium model. (C) 2000 Elsevier Science S.A. All rights reserved.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
