The emergence of a photonic band gap in Ge-on-Si micropillars ordered in a two-dimensional square lattice is demonstrated by the finite-element method. Candidate architectures are fabricated through epitaxy and the opening of the photonic band gap experimentally proved by photoluminescence spectroscopy. When the direct-gap emission of Ge is resonantly driven into the photonic gap, light propagation in the lattice plane is inhibited. Emission is eventually funneled out of plane, yielding a giant increase, i.e., about one order of magnitude, in the observed intensity. The demonstration of light routing in microcrystals' lattices opens interesting possibilities for Si photonics. The epitaxial self-assembled microstructures introduced here can be monotonically integrated on Si to improve the performances of group-IV lasers or engineered to optimize the working wavelength of future quantum photonic circuits.

Pedrini, J., Barzaghi, A., Valente, J., Paul, D., Isella, G., Pezzoli, F. (2021). Photonic Band Gap and Light Routing in Self-Assembled Lattices of Epitaxial Ge-on-Si Microstructures. PHYSICAL REVIEW APPLIED, 16(6) [10.1103/PhysRevApplied.16.064024].

Photonic Band Gap and Light Routing in Self-Assembled Lattices of Epitaxial Ge-on-Si Microstructures

Pedrini, Jacopo
Primo
;
Pezzoli, Fabio
Ultimo
2021

Abstract

The emergence of a photonic band gap in Ge-on-Si micropillars ordered in a two-dimensional square lattice is demonstrated by the finite-element method. Candidate architectures are fabricated through epitaxy and the opening of the photonic band gap experimentally proved by photoluminescence spectroscopy. When the direct-gap emission of Ge is resonantly driven into the photonic gap, light propagation in the lattice plane is inhibited. Emission is eventually funneled out of plane, yielding a giant increase, i.e., about one order of magnitude, in the observed intensity. The demonstration of light routing in microcrystals' lattices opens interesting possibilities for Si photonics. The epitaxial self-assembled microstructures introduced here can be monotonically integrated on Si to improve the performances of group-IV lasers or engineered to optimize the working wavelength of future quantum photonic circuits.
Articolo in rivista - Articolo scientifico
Photonic crystal; photoluminescence; Ge; Si; epitaxy;
English
Pedrini, J., Barzaghi, A., Valente, J., Paul, D., Isella, G., Pezzoli, F. (2021). Photonic Band Gap and Light Routing in Self-Assembled Lattices of Epitaxial Ge-on-Si Microstructures. PHYSICAL REVIEW APPLIED, 16(6) [10.1103/PhysRevApplied.16.064024].
Pedrini, J; Barzaghi, A; Valente, J; Paul, D; Isella, G; Pezzoli, F
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/374462
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