Boron accumulation was observed close to the interface between an epitaxially grown silicon layer and a silicon substrate wafer and then analyzed. It was concluded that boron contamination interacting with the surface oxide on wafers led to boron accumulation close to the interface. Such accumulation is shown to occur for epilayers of standard thickness (approximately 10 mum), with boron being electrically unactive
Pivac, B., Borghesi, A., Geddo, M., Sassella, A., Pedrotti, M. (1992). Boron accumulation at epi-substrate silicon interface during epitaxial growth. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 15(1), 32-36 [10.1016/0921-5107(92)90025-5].
Boron accumulation at epi-substrate silicon interface during epitaxial growth
BORGHESI, ALESSANDRO;SASSELLA, ADELE;
1992
Abstract
Boron accumulation was observed close to the interface between an epitaxially grown silicon layer and a silicon substrate wafer and then analyzed. It was concluded that boron contamination interacting with the surface oxide on wafers led to boron accumulation close to the interface. Such accumulation is shown to occur for epilayers of standard thickness (approximately 10 mum), with boron being electrically unactive
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