Boron accumulation was observed close to the interface between an epitaxially grown silicon layer and a silicon substrate wafer and then analyzed. It was concluded that boron contamination interacting with the surface oxide on wafers led to boron accumulation close to the interface. Such accumulation is shown to occur for epilayers of standard thickness (approximately 10 mum), with boron being electrically unactive

Pivac, B., Borghesi, A., Geddo, M., Sassella, A., & Pedrotti, M. (1992). Boron accumulation at epi-substrate silicon interface during epitaxial growth. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 15(1), 32-36 [10.1016/0921-5107(92)90025-5].

Boron accumulation at epi-substrate silicon interface during epitaxial growth

BORGHESI, ALESSANDRO;SASSELLA, ADELE;
1992

Abstract

Boron accumulation was observed close to the interface between an epitaxially grown silicon layer and a silicon substrate wafer and then analyzed. It was concluded that boron contamination interacting with the surface oxide on wafers led to boron accumulation close to the interface. Such accumulation is shown to occur for epilayers of standard thickness (approximately 10 mum), with boron being electrically unactive
Articolo in rivista - Articolo scientifico
Scientifica
silicon; epitaxial layer; infrared; B doping
English
Pivac, B., Borghesi, A., Geddo, M., Sassella, A., & Pedrotti, M. (1992). Boron accumulation at epi-substrate silicon interface during epitaxial growth. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 15(1), 32-36 [10.1016/0921-5107(92)90025-5].
Pivac, B; Borghesi, A; Geddo, M; Sassella, A; Pedrotti, M
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10281/34675
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